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公开(公告)号:US10103723B2
公开(公告)日:2018-10-16
申请号:US15815202
申请日:2017-11-16
Applicant: DENSO CORPORATION
Inventor: Hiroshi Shimizu , Kengo Mochiki , Yuu Yamahira , Tetsuya Matsuoka , Kazuma Fukushima , Mitsunori Kimura , Yasuyuki Ohkouchi
IPC: H03K17/14 , H03K17/0412 , H03K17/12 , H03K17/082 , H03K17/16 , H02M1/00 , H03K17/08
Abstract: In a driving apparatus for switches connected in parallel to each other, drivers respectively turn on or off the switches. A temperature obtainer obtains a value of a temperature parameter correlating with a temperature of at least one of the first and second switches. A selector selects at least one of the switches as at least one drive target switch. A driver causes at least one of the drivers to turn on the at least one drive target switch during an on duration and thereafter turn off the at least one drive target switch in each target switching cycle. The selector adjusts the number of the selected at least one drive target switch based on the value of the temperature parameter.
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公开(公告)号:US09881852B2
公开(公告)日:2018-01-30
申请号:US15491028
申请日:2017-04-19
Applicant: DENSO CORPORATION
Inventor: Mitsunori Kimura , Hiroshi Shimizu , Kengo Mochiki , Yasuyuki Ohkouchi , Yuu Yamahira , Tetsuya Matsuoka , Kazuma Fukushima
IPC: H01L23/12 , H01L23/31 , H01L23/495 , H01L25/00 , H01L25/07 , H01L25/16 , H01L23/00 , H01L27/06 , H02M7/537 , H02P27/06
CPC classification number: H01L23/49568 , H01L23/3107 , H01L23/3114 , H01L23/4012 , H01L23/473 , H01L23/49562 , H01L23/49575 , H01L24/32 , H01L25/07 , H01L27/0623 , H01L2224/32245 , H01L2924/10253 , H01L2924/10272 , H01L2924/1033 , H01L2924/13055 , H01L2924/13091 , H02M1/088 , H02M7/003 , H02M7/537 , H02M2001/327 , H02P27/06
Abstract: A semiconductor module of an electric power converter includes an IGBT and a MOSFET which are connected in parallel to each other and provided on the same lead frame, either one of the IGBT and the MOSFET is a first switching element and the remaining one is a second switching element, and the conduction path of the second switching element is disposed at a position that is separated from a conduction path of the first switching element in the same lead frame.
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