Abstract:
A tube wall, division wall, or wing wall section (10) for a circulating fluidized bed boiler with improved erosion resistant characteristics has a reduced diameter tube section (40) adjacent the refractory covered by an abrasion resistant refractory tile (60). The refractory tile (60) is mounted to the reduced diameter tube section (40) with the upper edge of the refractory tile outside of or not extending beyond a solids fall line of solids in the fluidized bed to eliminate exposed discontinuities.
Abstract:
A circulating fluidized bed (CFB) reactor or combustor having an internal impact type primary particle separator which provides for internal return of all primary collected solids to a bottom portion of the reactor or combustor for subsequent recirculation without external and internal recycle conduits. The CFB reactor enclosure or furnace is provided with plural furnace outlets. This construction permits increased furnace depths and reduced furnace widths, resulting in a compact design.
Abstract:
A system for the control and conveyance of particulate material from a standpipe to the furnace of a circulating fluidized bed boiler. Aeration means positioned in a first area of a conduit transports particulate material deposited by a standpipe to a second area of the conduit. Upon such relocation, additional material from the standpipe enters the first area of the conduit as a replacement for the previously removed material. Fluidizing means in the second area of the conduit fluidizes this removed material causing it to achieve a generally uniform level within this second area. As the height of this level exceeds that of the lower edge of a discharge opening, the fluidized material passes through this opening and into the furnace of a circulating fluidized bed boiler.
Abstract:
A system and method for quickly cooling and de-pressurizing a boiler arrangement in the event of a plant power loss, a.k.a. a black plant condition. A steam discharge system injects steam from the steam/water circuit into the furnace, thereby both cooling components of the boiler arrangement and reducing pressure in the steam/water circuit. This reduces or eliminates the additional cost associated with providing extra capacity in a steam drum and/or an independently powered boiler water pump. The system and method is particularly useful for quickly cooling the U-beams of a circulating fluidized bed (CFB) boiler during a black plant condition. In application to boiler arrangements with a selective non-catalytic reduction (SNCR) system employing steam as a carrier for a NOx reducing agent, the steam discharge system advantageously uses the discharge nozzles of the SNCR system to inject the steam into the furnace.
Abstract:
A closed-cycle system and method of electrical power generation uses steam to transport charge carriers through an MHD generator. Water droplets, fine particles or mixtures thereof are used as the charge carriers. The fine particles are sufficiently small to allow the particles to pass through pumps and other equipment in the flow path with little or no damage, thereby eliminating the need to remove and re-inject a seed material, or treat it prior to discharge to the environment. The high operating temperatures of prior art MHD generators are avoided, thereby allowing more economical and readily available materials to be used. The system and method also allows the MHD generator to be used as the bottoming cycle in a single-loop power generation system, with a conventional steam turbine-generator used as the topping cycle, resulting in an increased heat rate with reduced emissions of greenhouse gases and other pollutants, and with reduced heat rejection to the environment per unit of electricity produced.
Abstract:
The present invention provides a bi-directional ball seat and method of use. In at least one embodiment, the present invention provides a fluid control system that includes a radial protrusion that can be selectively engaged and disengaged upstream and/or from a ball seat. For example, a ball can be placed in a passageway, engaged with a downstream ball seat, and the radial protrusion radially extended into the passageway distally from the seat relative to the ball. A reverse movement of the ball is restricted by the active radial movement of the radial protrusion into the passageway. The control system can be used to control a variety of tools associated with the well. Without limitation, the tools can include crossover tools, sleeves, packers, safety valves, separators, gravel packers, perforating guns, decoupling tools, valves, and other tools know to those with ordinary skills in the art.
Abstract:
A circulating fluidized bed (CFB) unit utilizing a mechanical dust collector located in a vertical flue above at least one heat exchange surface, and at least partially underneath the floor of a non-vertical flue, includes a plurality of individual collection elements each having a downward bottom outlet for a flow of cleaned gas conveyed through the collection elements.
Abstract:
Disclosed is a method for detecting electrical defects on test structures of a semiconductor die. The test structures includes a plurality of electrically-isolated test structures and a plurality of non-electrically-isolated test structures. The test structures each has a portion located partially within a scan area. The portion of the test structures located within the scan area is scanned to obtain voltage contrast images of the test structures' portions. In a multi-pixel processor, the obtained voltage contrast images are analyzed to determine whether there are defects present within the test structures. In a preferred embodiment, the multi-pixel processor operates with pixel resolution sizes in a range of about 25 nm to 200 nm. In another aspect, the processor operates with a pixel size nominally equivalent to two times a width of the test structure's line width to maximize throughput at optimal signal to noise sensitivity. A computer readable medium having programming instructions for performing the above described methods is also disclosed.
Abstract:
Disclosed is a semiconductor die having an upper layer and a lower layer. The die includes a lower test structure formed in the lower metal layer of the semiconductor die. The lower conductive test structure has a first end and a second end, wherein the first end is coupled to a predetermined voltage level. The die also has an insulating layer formed over the lower metal layer and an upper test structure formed in the upper metal layer of the semiconductor die. The upper conductive test structure is coupled with the second end of the lower conductive test structure, and the upper metal layer being formed over the insulating layer. The die further includes at least one probe pad coupled with the upper test structure. Preferably, the first end of the lower test structure is coupled to a nominal ground potential. In another implementation, the upper test structure is a voltage contrast element. In another embodiment, a semiconductor die having a scanning area is disclosed. The semiconductor die includes a first plurality of test structures wherein each of the test structures in the first plurality of test structures is located entirely within the scanning area. The die includes a second plurality of test structures wherein each of the test structures in the first plurality of test structures is located only partially within the scanning area. The first plurality of test structures or the second plurality of test structures has a probe pad coupled to at least one test structure.
Abstract:
A sample is inspected. The sample is scanned in a first direction with at least one particle beam. The sample is scanned in a second direction with at least one particle beam. The second direction is at an angle to the first direction. The number of defects per an area of the sample are found as a result of the first scan, and the position of one or more of the found defects is determined from the second scan. In a specific embodiment, the sample includes a test structure having a plurality of test elements thereon. A first portion of the test elements is exposed to the beam during the first scan to identify test elements having defects, and a second portion of the test elements is exposed during the second scan to isolate and characterize the defect.