公开(公告)号：US20100193966A1

公开(公告)日：2010-08-05

申请号：US12758946

申请日：2010-04-13

申请人： Seong-Goo Kim ,  Hyeong-Sun Hong ,  Dong-Hyun Kim ,  Nam-Jung Kang

发明人： Seong-Goo Kim ,  Hyeong-Sun Hong ,  Dong-Hyun Kim ,  Nam-Jung Kang

IPC分类号： H01L23/538

CPC分类号： H01L29/4236 ,  H01L21/76829 ,  H01L21/76897 ,  H01L27/0207 ,  H01L27/10855 ,  H01L27/10876

摘要： Methods of forming a contact structure in a semiconductor device include providing a semiconductor substrate including active regions and word lines crossing the active regions. A first interlayer dielectric layer is formed on the semiconductor substrate. Direct contact plugs are formed extending through the first interlayer dielectric layer to contact selected ones of the active regions. Bit line structures are formed on the first interlayer dielectric layer and crossing the word lines that are coupled to the selected ones of the active regions by the direct contact plugs. A second interlayer dielectric layer is formed on the semiconductor substrate including the bit line structures. Barrier patterns are formed extending in parallel with bit line structures and into the second interlayer dielectric layer. Mask patterns are formed overlying an entirety of top surfaces of the direct contact plugs on the second interlayer dielectric layer and the bit line structures. The second and first interlayer dielectric layers are is etched using the mask patterns, the barrier patterns and the bit line structures as an etching mask to form buried contact holes and buried contact plugs are formed in the buried contact holes.

摘要翻译： 在半导体器件中形成接触结构的方法包括提供包括有源区和跨越有源区的字线的半导体衬底。 在半导体衬底上形成第一层间电介质层。 形成延伸穿过第一层间电介质层的直接接触插塞以接触所选择的有源区域。 位线结构形成在第一层间电介质层上并且通过直接接触插塞与被选择的有源区域耦合的字线交叉。 在包括位线结构的半导体衬底上形成第二层间电介质层。 阻挡层图案形成为与位线结构平行延伸并进入第二层间电介质层。 掩模图形形成在第二层间介质层上的直接接触插塞的整个顶表面和位线结构上。 使用掩模图案蚀刻第二和第一层间电介质层，将掩模图案和位线结构作为蚀刻掩模形成掩埋的接触孔，并且在埋入的接触孔中形成掩埋的接触塞。

公开(公告)号：US20100192398A1

公开(公告)日：2010-08-05

申请号：US12676269

申请日：2008-09-03

申请人： Seung-Phyo Ahn ,  Sang-Ik Lee ,  Byeong-Jo Ryoo ,  Sung-Ho Song ,  Jeong-Yun Kim ,  Yang-Hwan Kim ,  Jae-Hyuk Wee ,  Dong-Hyun Kim ,  Yoon-Seob Eom ,  Yang-Ho Kim

发明人： Seung-Phyo Ahn ,  Sang-Ik Lee ,  Byeong-Jo Ryoo ,  Sung-Ho Song ,  Jeong-Yun Kim ,  Yang-Hwan Kim ,  Jae-Hyuk Wee ,  Dong-Hyun Kim ,  Yoon-Seob Eom ,  Yang-Ho Kim

IPC分类号： F26B21/08 ,  D06F58/04

CPC分类号： F26B21/08 ,  D06F58/206 ,  D06F58/22 ,  D06F58/24

摘要： Disclosed is the dehumidifying apparatus for a dryer comprising: a case; a drum disposed inside the case and for receiving objects to be dried therein; and a hot air supplying unit for supplying hot air into the drum and drying the objects to be dried, the dehumidifying apparatus, comprising: a heat exchanger for heat exchange with air flowing from the drum; and an injection nozzle portion disposed between the hot air supplying unit and the heat exchanger so as to inject a certain jet. According to the dehumidifying apparatus for a dryer, when gas introduced into the dehumidifying apparatus from the drum through a jet passes through the jet, foreign substances such as lint, etc. contained in the gas may be separated, thereby preventing accumulation of the foreign substances on the dehumidifying apparatus.

摘要翻译： 公开了一种用于干燥机的除湿装置，包括：壳体; 鼓，其设置在所述壳体内并用于接收待干燥物体; 以及热风供给单元，其用于将热空气供给到所述滚筒中并干燥所述待干燥物体，所述除湿装置包括：热交换器，用于与从所述滚筒流出的空气进行热交换; 以及设置在热空气供应单元和热交换器之间以便喷射一定喷射流的喷嘴部分。 根据干燥机的除湿装置，当通过喷射器从滚筒引入除湿装置的气体通过喷流时，气体中所含的诸如棉绒等的异物可能被分离，从而防止异物积聚 在除湿装置上。

公开(公告)号：US20100162584A1

公开(公告)日：2010-07-01

申请号：US12676228

申请日：2008-09-03

申请人： Seung-Phyo Ahn ,  Sang-Ik Lee ,  Byeong-Jo Ryoo ,  Sung-Ho Song ,  Jeong-Yun Kim ,  Yang-Hwan Kim ,  Jac-Hyuk Wee ,  Dong-Hyun Kim ,  Yoon-Seob Eom ,  Yang-Ho Kim

发明人： Seung-Phyo Ahn ,  Sang-Ik Lee ,  Byeong-Jo Ryoo ,  Sung-Ho Song ,  Jeong-Yun Kim ,  Yang-Hwan Kim ,  Jac-Hyuk Wee ,  Dong-Hyun Kim ,  Yoon-Seob Eom ,  Yang-Ho Kim

IPC分类号： F26B21/08 ,  D06F58/04 ,  F16K21/18

CPC分类号： D06F58/24 ,  D06F58/263 ,  D06F2058/2832 ,  Y10T137/7287

摘要： Disclosed is the dehumidifying apparatus for a dryer comprising: a case; a drum disposed inside the case and for receiving objects to be dried therein; and a hot air supplying unit for supplying hot air into the drum and drying the objects to be dried, the dehumidifying apparatus, comprising: a dehumidifying unit having a heat exchanger for cooling hot air flowing from the drum; and a water tank for containing a fluid supplied to the heat exchanger, wherein the fluid circulates between the heat exchanger and the water tank. The dehumidifying apparatus for a dryer may reduce an amount of water used for operating the dryer, prevent the waste of water, and stably supply recycled cool water to the heat exchanger from the water tank.

摘要翻译： 公开了一种用于干燥机的除湿装置，包括：壳体; 鼓，其设置在所述壳体内并用于接收待干燥物体; 以及热空气供给单元，用于将热空气供应到滚筒中并干燥待干燥的物体，该除湿装置包括：除湿单元，具有用于冷却从滚筒流出的热空气的热交换器; 以及用于容纳供应到热交换器的流体的水箱，其中流体在热交换器和水箱之间循环。 用于干燥器的除湿装置可以减少用于操作干燥器的水量，防止水的浪费，并且从水箱稳定地将再循环的冷水供应到热交换器。

公开(公告)号：US20100126873A1

公开(公告)日：2010-05-27

申请号：US12452873

申请日：2008-03-12

申请人： Dong-Seob Kim ,  Dong-Hyun Kim ,  Woon-Bong Hwang ,  Hyun-Chul Park ,  Kun-Hong Lee ,  Geun-Bae Lim ,  Sang-Min Lee ,  Joon-Won Kim

发明人： Dong-Seob Kim ,  Dong-Hyun Kim ,  Woon-Bong Hwang ,  Hyun-Chul Park ,  Kun-Hong Lee ,  Geun-Bae Lim ,  Sang-Min Lee ,  Joon-Won Kim

IPC分类号： C25D11/18 ,  C25D11/16

CPC分类号： C23C28/00 ,  C23C28/04 ,  C25D11/045 ,  C25D11/16 ,  C25D11/24

摘要： The present invention relates to a manufacturing method of a three dimensional structure having a hydrophobic inner surface. The manufacturing method includes anodizing a three dimensional metal member and forming fine holes on an external surface of the metal member, forming a replica by coating a non-wetting polymer material on the outer surface of the metal member and forming the non-wetting polymer material to be a replication structure corresponding to the fine holes of the metal member, forming an exterior by surrounding the replication structure with an exterior forming material, and etching the metal member and eliminating the metal member from the replication structure and the exterior forming material.

摘要翻译： 本发明涉及具有疏水性内表面的三维结构体的制造方法。 该制造方法包括阳极氧化三维金属构件并在金属构件的外表面上形成细孔，通过在金属构件的外表面上涂覆非润湿聚合物材料并形成非湿润聚合物材料形成复制品 作为与金属构件的细孔对应的复制结构，通过用外部形成材料围绕复制结构形成外部，并且蚀刻金属构件并从复制结构和外部形成材料中除去金属构件。

公开(公告)号：US07564094B2

公开(公告)日：2009-07-21

申请号：US12004985

申请日：2007-12-21

申请人： Dong-Hyun Kim ,  Chang-Jin Kang

发明人： Dong-Hyun Kim ,  Chang-Jin Kang

IPC分类号： H01L21/8238

CPC分类号： H01L21/28282

摘要： Non-volatile memory devices include a tunnel insulating layer on a channel region of a substrate, a charge-trapping layer pattern on the tunnel insulating layer and a first blocking layer pattern on the charge-trapping layer pattern. Second blocking layer patterns are on the tunnel insulating layer proximate sidewalls of the charge-trapping layer pattern. The second blocking layer patterns are configured to limit lateral diffusion of electrons trapped in the charge-trapping layer pattern. A gate electrode is on the first blocking layer pattern. The second blocking layer patterns may prevent lateral diffusion of the electrons trapped in the charge-trapping layer pattern.

摘要翻译： 非易失性存储器件包括在衬底的沟道区上的隧道绝缘层，隧道绝缘层上的电荷俘获层图案和电荷俘获层图案上的第一阻挡层图案。 第二阻挡层图案位于邻近电荷俘获层图案侧壁的隧道绝缘层上。 第二阻挡层图案被配置为限制捕获在电荷俘获层图案中的电子的横向扩散。 栅电极位于第一阻挡层图案上。 第二阻挡层图案可以防止捕获在电荷俘获层图案中的电子的横向扩散。

公开(公告)号：US07542518B2

公开(公告)日：2009-06-02

申请号：US11027676

申请日：2005-01-03

申请人： Dong-Hyun Kim ,  Dong-Won Shin

发明人： Dong-Hyun Kim ,  Dong-Won Shin

IPC分类号： H04K1/02

CPC分类号： H04L27/368

摘要： A polynomial predistortion apparatus and method for compensating for a nonlinear distortion characteristic of a power amplifier is provided. The apparatus and method comprise an adaptation controller for determining polynomial coefficients by calculating an inverse nonlinear distortion characteristic of the power amplifier, and calculating complex predistortion gains for all possible amplitudes of an input signal using the determined polynomial coefficients; and a predistorter for receiving an input signal which is a combination of complex-modulated previous baseband input signal samples and current input signal samples, predistorting the input signal using the complex predistortion gains output from the adaptation controller, and outputting the predistorted input signal to the power amplifier.

摘要翻译： 提供了一种用于补偿功率放大器的非线性失真特性的多项式预失真装置和方法。 该装置和方法包括：一个自适应控制器，用于通过计算功率放大器的反非线性失真特性来确定多项式系数;以及使用所确定的多项式系数来计算输入信号的所有可能振幅的复数预失真增益; 以及预失真器，用于接收作为复调制的先前基带输入信号样本和当前输入信号采样的组合的输入信号，使用从适配控制器输出的复数预失真增益来预失真输入信号，并将预失真输入信号输出到 功率放大器。

公开(公告)号：US20080283957A1

公开(公告)日：2008-11-20

申请号：US12112438

申请日：2008-04-30

申请人： Nam-Jung Kang ,  Dong-Soo Woo ,  Hyeong-Sun Hong ,  Dong-Hyun Kim

发明人： Nam-Jung Kang ,  Dong-Soo Woo ,  Hyeong-Sun Hong ,  Dong-Hyun Kim

IPC分类号： H01L29/00 ,  H01L21/4763

CPC分类号： H01L27/10888 ,  H01L21/76897 ,  H01L27/10855

摘要： Methods of fabricating a semiconductor device having a self-aligned contact plug are provided. Methods include forming a lower insulating layer on a semiconductor substrate, forming a plurality of interconnection patterns parallel to each other on the lower insulating layer; forming an upper insulating layer that is configured to fill between the interconnection patterns, and forming a plurality of first mask patterns crossing the plurality of interconnection patterns, ones of the plurality of first mask patterns parallel to each other on the semiconductor substrate having the upper insulating layer. Methods may include forming a second mask pattern that is self-aligned to the plurality of first mask patterns and that is between ones of the plurality of first mask patterns, etching the upper insulating layer and the lower insulating layer using the first and second mask patterns and the plurality of interconnection patterns as etch masks to form a plurality of contact holes exposing the semiconductor substrate, and forming a plurality of contact plugs in respective ones of the plurality of contact holes. Semiconductor devices are also provided.

摘要翻译： 提供制造具有自对准接触插头的半导体器件的方法。 方法包括在半导体衬底上形成下绝缘层，在下绝缘层上形成彼此平行的多个互连图案; 形成上部绝缘层，其被构造成填充在所述互连图案之间，并且形成与所述多个互连图案交叉的多个第一掩模图案，所述多个第一掩模图案中的所述第一掩模图案在具有所述上绝缘体的半导体衬底上彼此平行 层。 方法可以包括形成第二掩模图案，该第二掩模图案与多个第一掩模图案自对准，并且位于多个第一掩模图案之间，使用第一和第二掩模图案蚀刻上绝缘层和下绝缘层 以及所述多个互连图案作为蚀刻掩模，以形成暴露所述半导体衬底的多个接触孔，以及在所述多个接触孔中的相应接触孔中形成多个接触插塞。 还提供了半导体器件。

公开(公告)号：US20080262195A1

公开(公告)日：2008-10-23

申请号：US11797355

申请日：2007-05-02

申请人： Hae-Seok Ji ,  Ook-Jae Cho ,  Jae-Gug Ryu ,  Young-Hoon Ahn ,  Bong-Suk Kim ,  Dong-Hyun Kim

发明人： Hae-Seok Ji ,  Ook-Jae Cho ,  Jae-Gug Ryu ,  Young-Hoon Ahn ,  Bong-Suk Kim ,  Dong-Hyun Kim

IPC分类号： C08G61/00 ,  C08G79/00

CPC分类号： C07C17/23 ,  C07C21/19

摘要： Disclosed herein is a method of preparing a perfluoroalkadiene. A dihaloperfluorocarbon used as a starting material is added dropwise to a nonpolar organic solvent, a metal powder and an organic metal compound. The dihaloperfluorocarbon is slowly added dropwise in a temperature range from 30° C. to 150° C. for a certain period of time. Moreover, the nonpolar organic solvent used may be benzene, toluene, xylene, etc., and the organic metal compound is used by being dissolved in ethyl ether or tetrahydrofuran at a concentration of 1 to 3M. The metal powder used may be Mg, Zn, Cd, etc.

摘要翻译： 本文公开了一种制备全氟二烯的方法。 将用作起始原料的二卤碳氟化合物滴加到非极性有机溶剂，金属粉末和有机金属化合物中。 在30℃至150℃的温度范围内缓慢滴加二卤氟碳化氢一段时间。 此外，所用的非极性有机溶剂可以是苯，甲苯，二甲苯等，有机金属化合物以1〜3M的浓度溶解于乙醚或四氢呋喃中使用。 使用的金属粉末可以是Mg，Zn，Cd等。

公开(公告)号：US07323746B2

公开(公告)日：2008-01-29

申请号：US11228041

申请日：2005-09-14

申请人： Won-Mo Park ,  Jae-Choel Paik ,  Du-Heon Song ,  Dong-Hyun Kim ,  Chang-Sub Lee

发明人： Won-Mo Park ,  Jae-Choel Paik ,  Du-Heon Song ,  Dong-Hyun Kim ,  Chang-Sub Lee

IPC分类号： H01L27/108 ,  H01L29/94

CPC分类号： H01L29/0692 ,  H01L29/4236

摘要： A recess gate-type semiconductor device includes a gate electrode having a recessed portion at least partially covering a recess trench in an active region, and source/drain regions disposed in the active region that are separated by the gate electrode. The recess trench is separated from sidewalls of a device isolation region in a first direction and contacts sidewalls of the device isolation region in a second direction. The width of the recess trench of the active region in the second direction may be greater than the width of the source/drain regions in the second direction, and the recessed portion of the gate electrode may have tabs protruding in the first direction at its corners. Therefore, the semiconductor device has excellent junction leakage current and excellent refresh characteristics.

摘要翻译： 凹槽型半导体器件包括具有至少部分地覆盖有源区中的凹槽的凹部的栅电极和设置在有源区中的由栅电极分离的源/漏区。 所述凹槽在第一方向上与器件隔离区的侧壁分离，并沿着第二方向接触器件隔离区的侧壁。 有源区在第二方向上的凹槽的宽度可以大于第二方向上的源极/漏极区的宽度，并且栅电极的凹陷部分可以具有在其角部沿第一方向突出的突出部 。 因此，半导体器件具有优异的结漏电流和优异的刷新特性。

公开(公告)号：US20070231989A1

公开(公告)日：2007-10-04

申请号：US11807544

申请日：2007-05-29

申请人： Seung-Pil Chung ,  Jong-Ho Park ,  Kyeong-Koo Chi ,  Dong-Hyun Kim

发明人： Seung-Pil Chung ,  Jong-Ho Park ,  Kyeong-Koo Chi ,  Dong-Hyun Kim

IPC分类号： H01L21/8238

CPC分类号： H01L27/11521 ,  H01L27/115

摘要： A nonvolatile memory device includes a semiconductor substrate, a device isolation film, a tunnel insulation film, a plurality of floating gates, an inter-gate dielectric film, and a control gate pattern. Trenches are formed in the substrate that define active regions therebetween. The device isolation film is in the trenches in the substrate. The tunnel insulation film is on the active regions of the substrate. The plurality of floating gates are each on the tunnel insulation film over the active regions of the substrate. The inter-gate dielectric film extends across the floating gates and the device isolation film. The control gate pattern is on the inter-gate dielectric film and extends across the floating gates. A central region of the device isolation film in the trenches has an upper major surface that is recessed below an upper major surface of a surrounding region of the device isolation film in the trenches. An edge of the recessed central region of the device isolation film is aligned with a sidewall of an adjacent one of the floating gates.

摘要翻译： 非易失性存储器件包括半导体衬底，器件隔离膜，隧道绝缘膜，多个浮置栅极，栅极间电介质膜和控制栅极图案。 沟槽形成在衬底中，其间限定有效区域。 器件隔离膜位于衬底中的沟槽中。 隧道绝缘膜位于衬底的有源区上。 多个浮置栅极分别位于衬底的有源区上的隧道绝缘膜上。 栅极间电介质膜延伸穿过浮栅和器件隔离膜。 控制栅极图案在栅极间电介质膜上并且跨越浮动栅极延伸。 沟槽中的器件隔离膜的中心区域具有在沟槽中的器件隔离膜的周围区域的上主表面下方凹陷的上主表面。 器件隔离膜的凹入的中心区域的边缘与相邻的一个浮动栅极的侧壁对准。