公开(公告)号：US12237170B2

公开(公告)日：2025-02-25

申请号：US18374637

申请日：2023-09-28

Applicant: ENTEGRIS, INC.

Inventor： Sangbum Han ,  Seobong Chang ,  Bryan C. Hendrix ,  Jaeeon Park ,  Thomas H. Baum

IPC: H01L21/285 ,  C07F15/06 ,  C23C16/06 ,  C23C16/16 ,  C23C16/18

Abstract: The present disclosure relates to a bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors, and ultra high purity versions thereof, methods of making, and methods of using these bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors in a vapor deposition process. One aspect of the disclosure relates to an ultrahigh purity bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursor of the formula Co2(CO)6(R3C≡CR4), where R3 and R4 are different organic moieties and R4 is more electronegative or more electron withdrawing compared to R3.

公开(公告)号：US12209105B2

公开(公告)日：2025-01-28

申请号：US17901569

申请日：2022-09-01

Applicant: ENTEGRIS, INC.

Inventor： Philip S. H. Chen ,  Eric Condo ,  Bryan C. Hendrix ,  Thomas H. Baum ,  David Kuiper

IPC: C07F7/10 ,  C01B21/082 ,  C07F7/08 ,  C07F7/18 ,  C23C16/30 ,  C23C16/36 ,  C23C16/455 ,  H01L21/02

Abstract: Provided is a plasma enhanced atomic layer deposition (PEALD) process for depositing etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing O2 and NH3 co-reactants. This PEALD process relies on one or more precursors reacting in tandem with the plasma exposure to deposit the etch-resistant thin-films of SiOCN. The films display excellent resistance to wet etching with dilute aqueous HF solutions, both after deposition and after post-deposition plasma treatment(s). Accordingly, these films are expected to display excellent stability towards post-deposition fabrication steps utilized during device manufacturing and build.

公开(公告)号：US20250003072A1

公开(公告)日：2025-01-02

申请号：US18755011

申请日：2024-06-26

Applicant: ENTEGRIS, INC.

Inventor： Joseph E. Reynolds, III ,  Michael Watson ,  Bryan C. Hendrix ,  Sara Moghaddam ,  Devon N. Dion ,  Benjamin R. Garrett ,  Carlo Waldfried ,  Virendra Warke

IPC: C23C16/455 ,  C23C16/44

Abstract: High purity molybdenum-containing precursors and related systems and methods are provided. A precursor delivery system comprises a vaporizer vessel that is configured to contain a vaporizable precursor that, when vaporized, produces a precursor vapor. The precursor delivery system comprises at least one protective surface treatment. The at least one protective surface treatment covers a sufficient amount of at least one gas-exposed surface of the precursor delivery system to reduce an amount of at least one contaminant in the precursor vapor as compared to a precursor vapor produced by a precursor delivery system without the at least one protective surface treatment.

公开(公告)号：US20240412981A1

公开(公告)日：2024-12-12

申请号：US18737743

申请日：2024-06-07

Applicant: ENTEGRIS, INC.

Inventor： Phil S.H. Chen ,  Bryan C. Hendrix ,  Eric Condo

IPC: H01L21/3205 ,  C23C16/04 ,  C23C16/06 ,  C23C16/448 ,  H01L23/532

Abstract: Selective ruthenium deposition and related systems and methods are provided. A method comprises vaporizing at least a portion of a ruthenium precursor to produce a vaporized ruthenium precursor; contacting a first surface portion and a second surface portion of a substrate with the vaporized ruthenium precursor and at least one reducing gas; and depositing ruthenium on the first surface portion of the substrate with a selectivity of at least 25 Å relative to the second surface portion of the substrate. A device comprises a substrate having a first surface portion and a second surface portion adjacent to the first surface portion; and a ruthenium layer located on the first surface portion of the substrate, wherein the ruthenium layer has a thickness of at least 25 Å on the first surface portion of the substrate; wherein the second surface portion of the substrate does not comprise ruthenium.

公开(公告)号：US11965239B2

公开(公告)日：2024-04-23

申请号：US17161332

申请日：2021-01-28

Applicant: ENTEGRIS, INC.

Inventor： Gavin Richards ,  Thomas H. Baum ,  Han Wang ,  Bryan C. Hendrix

IPC: C23C16/34 ,  C23C16/455

CPC classification number: C23C16/34 ,  C23C16/45534 ,  C23C16/45553

Abstract: Provided is improved methodology for the nucleation of certain metal nitride substrate surfaces utilizing certain silicon-containing halides, silicon-containing amides, and certain metal precursors, in conjunction with nitrogen-containing reducing gases. While utilizing a pretreatment step, the methodology shows greatly improved nucleation wherein a microelectronic device substrate having such a metal nitride film deposited thereon has a thickness of about 10 Å to about 15 Å and less than about 1% of void area. Once such nucleation has been achieved, traditional layer-upon-layer deposition can rapidly take place.

公开(公告)号：US11919780B2

公开(公告)日：2024-03-05

申请号：US16923899

申请日：2020-07-08

Applicant: ENTEGRIS, INC.

Inventor： David M. Ermert ,  Robert L. Wright, Jr. ,  Thomas H. Baum ,  Bryan C. Hendrix

IPC: C01G39/04 ,  C01G41/04

CPC classification number: C01G39/04 ,  C01G41/04 ,  C01P2002/72

Abstract: The invention provides a process for preparing molybdenum and tungsten oxyhalide compounds which are useful in the deposition of molybdenum and tungsten containing films on various surfaces of microelectronic devices. In the process of the invention, a molybdenum or tungsten trioxide is heated in either a solid state medium or in a melt-phase reaction comprising a eutectic blend comprising alkaline and/or alkaline earth metal salts. The molybdenum or tungsten oxyhalides thus formed may be isolated as a vapor and crystallized to provide highly pure precursor compounds such as MoO2Cl2.

公开(公告)号：US20230115177A1

公开(公告)日：2023-04-13

申请号：US17961457

申请日：2022-10-06

Applicant: ENTEGRIS, INC.

Inventor： Scott L. Battle ,  Donn K. Naito ,  John N. Gregg ,  Jacob Thomas ,  Chase Parker ,  James Schindler ,  Bryan C. Hendrix ,  Benjamin H. Olson

IPC: C23C16/448 ,  C23C16/455

Abstract: A tray for an ampoule of a delivery system of solid precursor materials used in Atomic Layer Deposition (ALD) processes, Chemical Vapor Deposition (CVD) processes or both. The tray is configured to be able to have a reduced profile size when compressed to enhance the ease of which the tray can be inserted into the ampoule, and the tray is configured to expand in size to make improved contact with inner wall surfaces of the ampoule to provide improved heat transfer from the inner wall to the tray and ultimately to the solid precursor materials disposed on the tray.

公开(公告)号：US20220364225A1

公开(公告)日：2022-11-17

申请号：US17854473

申请日：2022-06-30

Applicant: ENTEGRIS, INC.

Inventor： Sungsil Cho ,  Seobong Chang ,  Jae Eon Park ,  Bryan C. Hendrix ,  Thomas H. Baum

IPC: C23C16/36 ,  C23C16/56 ,  C23C22/73 ,  H01L21/02

Abstract: Provided is a method for forming a silicon oxycarbonitride film (SiOCN) with varying proportions of each element, using a disilane precursor under vapor deposition conditions, wherein the percent carbon incorporation into the SiOCN film may be varied between about 5 to about 60%, by utilizing co-reactants chosen from oxygen, ammonia, and nitrous oxide gas. The carbon-enriched SiOCN films thus formed may be converted to pure silicon dioxide films after an etch stop protocol by treatment with O2 plasma.

公开(公告)号：US11414750B2

公开(公告)日：2022-08-16

申请号：US16868973

申请日：2020-05-07

Applicant: ENTEGRIS, INC.

Inventor： Sungsil Cho ,  Seobong Chang ,  Jae Eon Park ,  Bryan C. Hendrix ,  Thomas H. Baum

IPC: C23C16/36 ,  C23C16/56 ,  C23C22/73 ,  H01L21/02

Abstract: Provided is a method for forming a silicon oxycarbonitride film (SiOCN) with varying proportions of each element, using a disilane precursor under vapor deposition conditions, wherein the percent carbon incorporation into the SiOCN film may be varied between about 5 to about 60%, by utilizing co-reactants chosen from oxygen, ammonia, and nitrous oxide gas. The carbon-enriched SiOCN films thus formed may be converted to pure silicon dioxide films after an etch stop protocol by treatment with O2 plasma.

公开(公告)号：US20180044788A1

公开(公告)日：2018-02-15

申请号：US15674156

申请日：2017-08-10

Applicant: Entegris, Inc.

Inventor： Philip S.H. Chen ,  Bryan C. Hendrix ,  Thomas H. Baum

IPC: C23C16/16 ,  C22C19/07 ,  B32B15/04

Abstract: A deposited cobalt composition is described, including cobalt and one or more alloy component that is effective in combination with cobalt to enhance adhesion to a substrate when exposed on the substrate to variable temperature and/or delaminative force conditions, as compared to corresponding elemental cobalt, wherein the one or more alloy component is selected from the group consisting of boron, phosphorous, tin, antimony, indium, and gold. Such deposited cobalt composition may be employed for metallization in semiconductor devices and device precursor structures, flat-panel displays, and solar panels, and provides highly adherent metallization when the metallized substrate is subjected to thermal cycling and/or chemical mechanical planarization operations in the manufacturing of the semiconductor, flat-panel display, or solar panel product.