公开(公告)号：US20230030323A1

公开(公告)日：2023-02-02

申请号：US17949956

申请日：2022-09-21

Applicant: ENTEGRIS, INC.

Inventor： Atanu K. Das ,  Daniela White ,  Emanuel I. Cooper ,  Eric Hong ,  JeongYeol Yang ,  Juhee Yeo ,  Michael L. White ,  SeongJin Hong ,  SeungHyun Chae ,  Steven A. Lippy ,  WonLae Kim

IPC: C23F1/38 ,  H01L21/3213

Abstract: An etchant composition and method for etching molybdenum from a microelectronic device at an etch rate are described. A microelectronic device is contacted with an etchant composition for a time sufficient to at least partially remove the molybdenum. The etchant composition comprises at least one oxidizing agent, at least one oxidizing agent stabilizer, and at least one base and has a pH of from 7.5 to 13. The etchant composition selectively removes molybdenum at an etch rate of 5-200 Å/min.

公开(公告)号：US11492709B2

公开(公告)日：2022-11-08

申请号：US17230633

申请日：2021-04-14

Applicant: ENTEGRIS, INC.

Inventor： Atanu K. Das ,  Daniela White ,  Emanuel I. Cooper ,  Eric Hong ,  JeongYeol Yang ,  Juhee Yeo ,  Michael L. White ,  SeongJin Hong ,  SeungHyun Chae ,  Steven A. Lippy ,  WonLae Kim

IPC: C23F1/38 ,  H01L21/3213

Abstract: An etchant composition and method for etching molybdenum from a microelectronic device at an etch rate are described. A microelectronic device is contacted with an etchant composition for a time sufficient to at least partially remove the molybdenum. The etchant composition comprises at least one oxidizing agent, at least one oxidizing agent stabilizer, and at least one base and has a pH of from 7.5 to 13. The etchant composition selectively removes molybdenum at an etch rate of 5-200 Å/min.

公开(公告)号：US10577567B2

公开(公告)日：2020-03-03

申请号：US15821217

申请日：2017-11-22

Applicant: Entegris, Inc.

Inventor： Makonnen Payne ,  Emanuel I. Cooper ,  WonLae Kim ,  Eric Hong ,  Sean Kim

IPC: C11D7/32 ,  C11D3/33 ,  C11D7/36 ,  C11D3/00 ,  G03F7/42 ,  C11D11/00 ,  C11D1/62 ,  C11D3/06 ,  C11D3/20 ,  C11D3/28 ,  C11D3/39 ,  C11D3/43 ,  H01L21/02

Abstract: The disclosure relates to a cleaning composition that aids in the removal of post-etch residues in the production of semiconductors. There is provided a stock composition comprising: a tetraalkylammonium hydroxide base or a quaternary trialkylalkanolamine base; a corrosion inhibitor; and a combination of at least two or more polyprotic acids or salts thereof, wherein at least one said polyprotic acid or salt thereof contains phosphorous.