公开(公告)号：US10347504B2

公开(公告)日：2019-07-09

申请号：US15892775

申请日：2018-02-09

Applicant: Entegris, Inc.

Inventor： Steven Bilodeau ,  Emanuel I. Cooper ,  Jaeseok Lee ,  WonLae Kim ,  Jeffrey A. Barnes

IPC: H01L21/311 ,  G03F7/42 ,  H01L21/02 ,  H01L21/027

Abstract: A method and composition for removing bulk and/or ion-implanted resist material from microelectronic devices have been developed. The compositions effectively remove the ion-implanted resist material while not damaging the silicon-containing or germanium-containing materials.

公开(公告)号：US20180204764A1

公开(公告)日：2018-07-19

申请号：US15873531

申请日：2018-01-17

Applicant: Entegris, Inc.

Inventor： Emanuel I. Cooper ,  Makonnen Payne ,  WonLae Kim ,  Eric Hong ,  Sheng-Hung Tu ,  Chieh Ju Wang ,  Chia-Jung Hsu

IPC: H01L21/768 ,  H01L21/02 ,  B08B7/00

Abstract: The disclosure relates to a cleaning composition that aids in the removal of post-etch residues and aluminum-containing material, e.g., aluminum oxide, in the production of semiconductors that utilize an aluminum-containing etch stop layer. The compositions have a high selectivity for post-etch residue and aluminum-containing materials relative to low-k dielectric materials, cobalt-containing materials and other metals on the microelectronic device.

公开(公告)号：US20220208553A1

公开(公告)日：2022-06-30

申请号：US17559906

申请日：2021-12-22

Applicant: ENTEGRIS, INC.

Inventor： SeungHyun Chae ,  SeongJin Hong ,  Eric Hong ,  Juhee Yeo ,  WonLae Kim ,  JeongYeol Yang

IPC: H01L21/3105 ,  C23F1/30 ,  C23F1/44 ,  C23F11/04

Abstract: Compositions useful for the selective etching, i.e., removal, of metal oxide hard masks such as zirconium oxide and hafnium oxide, often used as hard masks in microelectronic devices, in the presence of other materials such as polysilicon, silicon dioxide, silicon nitride, and tungsten are provided.

公开(公告)号：US20180148669A1

公开(公告)日：2018-05-31

申请号：US15821217

申请日：2017-11-22

Applicant: Entegris, Inc.

Inventor： Makonnen Payne ,  Emmanuel I. Cooper ,  WonLae Kim ,  Eric Hong ,  Sean Kim

IPC: C11D3/33 ,  C11D1/62 ,  C11D3/28 ,  C11D3/06 ,  C11D3/20 ,  C11D3/43 ,  C11D3/39 ,  H01L21/02

CPC classification number: C11D3/33 ,  C11D1/62 ,  C11D3/0073 ,  C11D3/06 ,  C11D3/2068 ,  C11D3/2082 ,  C11D3/28 ,  C11D3/3942 ,  C11D3/43 ,  C11D7/3209 ,  C11D7/36 ,  C11D11/0047 ,  G03F7/425 ,  G03F7/426 ,  H01L21/02068

Abstract: The disclosure relates to a cleaning composition that aids in the removal of post-etch residues in the production of semiconductors. There is provided a stock composition comprising: a tetraalkylammonium hydroxide base or a quaternary trialkylalkanolamine base; a corrosion inhibitor; and a combination of at least two or more polyprotic acids or salts thereof, wherein at least one said polyprotic acid or salt thereof contains phosphorous.

公开(公告)号：US20240309272A1

公开(公告)日：2024-09-19

申请号：US18607272

申请日：2024-03-15

Applicant: ENTEGRIS, INC.

Inventor： Juhee Yeo ,  SeongJin Hong ,  WonLae Kim ,  Younghun Park ,  Yeonhui Kang ,  Jinwook Jeong

IPC: C09K13/06

CPC classification number: C09K13/06

Abstract: Compositions and methods for selectively etching silicon nitride relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device.

公开(公告)号：US10790187B2

公开(公告)日：2020-09-29

申请号：US15873531

申请日：2018-01-17

Applicant: Entegris, Inc.

Inventor： Emanuel I. Cooper ,  Makonnen Payne ,  WonLae Kim ,  Eric Hong ,  Sheng-Hung Tu ,  Chieh Ju Wang ,  Chia-Jung Hsu

IPC: C11D7/50 ,  H01L21/768 ,  B08B7/00 ,  H01L21/02 ,  C11D3/395 ,  C23G1/20 ,  C11D7/32 ,  C11D7/36 ,  C11D3/00 ,  C11D3/39 ,  C09K13/00 ,  G03F7/42 ,  C11D7/26 ,  C11D7/08 ,  C23G1/18 ,  C11D11/00 ,  C23G1/26 ,  H01L21/311

Abstract: The disclosure relates to a cleaning composition that aids in the removal of post-etch residues and aluminum-containing material, e.g., aluminum oxide, in the production of semiconductors that utilize an aluminum-containing etch stop layer. The compositions have a high selectivity for post-etch residue and aluminum-containing materials relative to low-k dielectric materials, cobalt-containing materials and other metals on the microelectronic device.

公开(公告)号：US20250019590A1

公开(公告)日：2025-01-16

申请号：US18806681

申请日：2024-08-15

Applicant: ENTEGRIS, INC.

Inventor： Eric Hong ,  SeongJin Hong ,  WonLae Kim ,  JeongYeol Yang ,  SeungHyun Chae ,  JuHee Yeo

IPC: C09K13/08 ,  H01L21/306

Abstract: Provided are compositions and methods for selectively etching titanium nitride, generally leaving molybdenum present unaffected by the process, as well as any aluminum oxide, silicon dioxide, and polysilicon which may be present on the device. In general, the compositions of the invention were able to achieve titanium nitride etch rates exceeding 3.5 Å/minute, thereby providing uniform recess top and bottom layers in patterns.

公开(公告)号：US12152187B2

公开(公告)日：2024-11-26

申请号：US17402126

申请日：2021-08-13

Applicant: ENTEGRIS, INC.

Inventor： Eric Hong ,  SeongJin Hong ,  WonLae Kim ,  JeongYeol Yang ,  SeungHyun Chae ,  JuHee Yeo

IPC: C09K13/08 ,  H01L21/306

Abstract: Provided are compositions and methods for selectively etching titanium nitride, generally leaving molybdenum present unaffected by the process, as well as any aluminum oxide, silicon dioxide, and polysilicon which may be present on the device. In general, the compositions of the invention were able to achieve titanium nitride etch rates exceeding 3.5 Å/minute, thereby providing uniform recess top and bottom layers in patterns.

公开(公告)号：US20180240680A1

公开(公告)日：2018-08-23

申请号：US15892775

申请日：2018-02-09

Applicant: Entegris, Inc.

Inventor： Steven Bilodeau ,  Emanuel I. Cooper ,  Jaeseok Lee ,  WonLae Kim ,  Jeffrey A. Barnes

IPC: H01L21/311 ,  H01L21/027 ,  G03F7/42 ,  H01L21/02

CPC classification number: H01L21/31133 ,  G03F7/423 ,  H01L21/02057 ,  H01L21/0273

Abstract: A method and composition for removing bulk and/or ion-implanted resist material from microelectronic devices have been developed. The compositions effectively remove the ion-implanted resist material while not damaging the silicon-containing or germanium-containing materials.

公开(公告)号：US20230383185A1

公开(公告)日：2023-11-30

申请号：US18202007

申请日：2023-05-25

Applicant: ENTEGRIS, INC.

Inventor： JeongYeol Yang ,  Hyungpyo Hong ,  Juhee Yeo ,  SeongJin Hong ,  WonLae Kim

IPC: C09K13/08 ,  C09K15/20

CPC classification number: C09K13/08 ,  C09K15/20

Abstract: Compositions and methods for selectively etching titanium nitride, cobalt, or a combination thereof. The compositions and methods generally leave molybdenum and other materials present unaffected by the process. The process can achieve a high etching rate, and can provide uniform recess top and bottom layers in patterns.