公开(公告)号：US20180240680A1

公开(公告)日：2018-08-23

申请号：US15892775

申请日：2018-02-09

Applicant: Entegris, Inc.

Inventor： Steven Bilodeau ,  Emanuel I. Cooper ,  Jaeseok Lee ,  WonLae Kim ,  Jeffrey A. Barnes

IPC: H01L21/311 ,  H01L21/027 ,  G03F7/42 ,  H01L21/02

CPC classification number: H01L21/31133 ,  G03F7/423 ,  H01L21/02057 ,  H01L21/0273

Abstract: A method and composition for removing bulk and/or ion-implanted resist material from microelectronic devices have been developed. The compositions effectively remove the ion-implanted resist material while not damaging the silicon-containing or germanium-containing materials.

公开(公告)号：US20180197746A1

公开(公告)日：2018-07-12

申请号：US15742334

申请日：2016-07-07

Applicant: Entegris, Inc.

Inventor： Steven Bilodeau ,  Emanuel I. Cooper

IPC: H01L21/306 ,  C09K13/08 ,  C09K13/06

CPC classification number: H01L21/30604 ,  C09K13/06 ,  C09K13/08

Abstract: Compositions useful for the selective removal of silicon germanium materials relative to germanium-containing materials and silicon-containing materials from a microelectronic device having same thereon. The removal compositions include at least one diol and are tunable to achieve the required SiGe:Ge removal selectivity and etch rates.