Abstract:
Provided is a composition for conductive adhesive. The composition for conductive adhesive includes a heterocyclic compound containing oxygen and including at least one of an epoxy group or oxetane group, a reductive curing agent including an amine group and a carboxyl group, and a photoinitiator, wherein a mixture ratio of the heterocyclic compound and the reductive curing agent satisfies Conditional Expression 1 below. 0.5≤(b+c)/a≤1.5, a>0, b≥0, c>0 [Conditional Expression 1] where ‘a’ denotes a mole number of a heterocycle in the heterocyclic compound, ‘b’ denotes a mole number of hydrogen bonded to a nitrogen atom of the amine group included in the reductive curing agent, and ‘c’ denotes a mole number of the carboxyl group.
Abstract:
Provided is a wire for electric bonding, which includes a solder wire and a composition for bonding adjacent to the solder wire, the solder wire is wet when reaches to a melting point as heat is transferred, the composition for bonding includes an epoxy resin, a reducing agent, and a curing agent, the reducing agent removes a metal oxide formed on a surface of the solder wire, and the epoxy resin is cured by chemically reacting with the reducing agent and the curing agent at a curing temperature.
Abstract:
Provided are an optical coupling device and a method for manufacturing the same. The optical coupling device includes a first waveguide including a first forward tapered part, a second waveguide disposed on the first waveguide and including a first reverse tapered part in a direction opposite to the first forward tapered part, and an interlayer waveguide disposed between the first and second waveguides and having a thickness corresponding to a distance between the first forward tapered part and the first reverse tapered part.
Abstract:
Provided is an optical coupler including a substrate, a buffer layer on the substrate, a ridge waveguide having a first side surface and a second side surface opposed to the first side surface, and a first waveguide disposed adjacent to the second side surface. The first waveguide includes a first body part and a first connecting part extending from one end of the first body part to be inserted in the ridge waveguide. The first connecting part has a width decreasing in the direction away from the second side surface, and the ridge waveguide includes an extension part extending under an upper surface of the buffer layer.
Abstract:
Provided is a wavelength division device. The wavelength division device includes input arrayed waveguides, an input circular grating coupler connected to one ends of the input arrayed waveguides and configured to refract first light having a plurality of wavelengths and output the refracted first light to each of the one ends of the input arrayed waveguides as plurality of second light, and an output star coupler connected to the other ends of the input arrayed waveguides and configured to receive the plurality of second light from the other ends of the input arrayed waveguides and output optical signals that are divided for each wavelength. The input circular grating coupler includes a plurality of circular gratings.
Abstract:
Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.
Abstract:
Provided is an organic-inorganic compound including a first structural body and a curable reactive group, wherein the first structural body may have a structure in which silane and isohexide are chemically bonded through a silyl ether bond.
Abstract:
Provided are a microwave heating device and a method for manufacturing a semiconductor packaging using the same. The microwave heating device includes a microwave generator configured to generate microwaves, a microwave absorbing layer configured to receive the microwaves so as to be heated, a temperature measuring layer provided on the microwave absorbing layer, a sensor configured to detect a temperature of the temperature measuring layer, and a controller connected to the sensor and the microwave generator to determine the temperature of the microwave absorbing layer using a detection signal of the sensor, the controller being configured to control a voltage of the microwaves provided from the microwave generator based on the temperature of the microwave absorbing layer.
Abstract:
Provided are a laser control structure and a laser bonding method using the same, and more particularly, a laser bonding method including: forming bonding portions on a substrate; providing a bonding object onto the bonding portions; providing a laser control structure onto the bonding object or the substrate; irradiating a laser toward the bonding object and the bonding portions; controlling quantity of laser light absorbed through the laser control structure; using the controlled quantity of laser light to heat the bonding portions and the bonding object to a bonding temperature; and bonding the bonding portions and the bonding object, wherein the laser control structure includes: a first substrate including a first region and a second region; a first thin film laminate on the first region; and a second thin film laminate on the second region, wherein: the first thin film laminate includes at least one first thin film layer and at least one second thin film layer, which are laminated on the first region; the second thin film laminate includes at least one third thin film layer and at least one fourth thin film layer, which are laminated on the second region; reflectance or absorptivity of the first thin film laminate with respect to laser is different from reflectance or absorptivity of the second thin film laminate; and the bonding temperature varies according to the quantity of laser light.
Abstract:
Provided is a method of fabricating a semiconductor package. The method of fabricating the semiconductor package include preparing a lower element including a lower substrate, a lower electrode, an UBM layer, and a reducing agent layer, providing an upper element including an upper substrate, an upper electrode, and a solder bump layer, providing a pressing member on the upper substrate to press the upper substrate to the lower substrate, and providing a laser beam passing through the pressing member to bond the upper element to the lower element.