公开(公告)号：US20140346532A1

公开(公告)日：2014-11-27

申请号：US14062454

申请日：2013-10-24

Applicant: Electronics and Telecommunications Research Institute

Inventor： Gyungock KIM ,  Hyundai PARK ,  In Gyoo KIM ,  Sang Hoon KIM ,  Ki Seok JANG ,  Sang Gi KIM ,  Jiho JOO ,  Yongseok CHOI ,  Hyuk Je KWON ,  Jaegyu PARK ,  Sun Ae KIM ,  Jin Hyuk OH ,  Myung Joon KWACK

IPC: H01L31/167 ,  G02B6/42

CPC classification number: G02B6/12004 ,  G02B6/13 ,  G02B6/4206 ,  G02B6/4214 ,  H01L21/762 ,  H01L27/15 ,  H01L31/167

Abstract: Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.

Abstract translation: 公开了一种光输入/输出装置和包括其的光电系统。 该器件包括体硅衬底，整体地集成在体硅衬底的一部分上的至少一个垂直输入光检测元件以及整体集成在体硅衬底的另一部分上的至少一个垂直输出光源元件， 垂直输入光检测元件。 垂直输出光源元件包括通过晶片接合方法与体硅衬底组合的III-V化合物半导体光源有源层。

公开(公告)号：US20170269298A1

公开(公告)日：2017-09-21

申请号：US15607726

申请日：2017-05-30

Applicant: Electronics and Telecommunications Research Institute

Inventor： Gyungock KIM ,  Hyundai PARK ,  In Gyoo KIM ,  Sang Hoon KIM ,  Ki Seok JANG ,  Sang Gi KIM ,  Jiho JOO ,  Yongseok CHOI ,  Hyuk Je KWON ,  Jaegyu PARK ,  Sun Ae KIM ,  Jin Hyuk OH ,  myung joon KWACK

IPC: G02B6/12 ,  G02B6/13 ,  H01L27/15 ,  G02B6/42 ,  H01L21/762

CPC classification number: G02B6/12004 ,  G02B6/13 ,  G02B6/4206 ,  G02B6/4214 ,  H01L21/762 ,  H01L27/15 ,  H01L31/167

Abstract: Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.

公开(公告)号：US20160211402A1

公开(公告)日：2016-07-21

申请号：US14812981

申请日：2015-07-29

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Jiho JOO ,  Gyungock KIM ,  Myungjoon KWACK ,  Sang Hoon KIM ,  Sun Ae KIM ,  In Gyoo KIM ,  Jaegyu PARK ,  Jin Hyuk OH ,  Ki Seok JANG

IPC: H01L31/109 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/0304 ,  H01L31/028

CPC classification number: H01L31/022416 ,  H01L31/03529 ,  H01L31/1075 ,  H01L31/1808 ,  Y02E10/50 ,  Y02P70/521

Abstract: Provided is a photodetector including a substrate, a first doped region on the substrate, a second doped region having a ring structure, wherein the second doped region is provided in the substrate, surrounds the first doped region and is horizontally spaced apart from a side of the first doped region, an optical absorption layer on the first doped region, a contact layer on the optical absorption layer, a first electrode on the contact layer, and a second electrode on the second doped region.

Abstract translation: 提供了一种光电探测器，其包括衬底，衬底上的第一掺杂区域，具有环形结构的第二掺杂区域，其中第二掺杂区域设置在衬底中，围绕第一掺杂区域并且与 第一掺杂区域，第一掺杂区域上的光吸收层，光吸收层上的接触层，接触层上的第一电极和第二掺杂区域上的第二电极。

公开(公告)号：US20170261705A1

公开(公告)日：2017-09-14

申请号：US15607717

申请日：2017-05-30

Applicant: Electronics and Telecommunications Research Institute

Inventor： Gyungock KIM ,  Hyundai PARK ,  In Gyoo KIM ,  Sang Hoon KIM ,  Ki Seok JANG ,  Sang Gi KIM ,  Jiho JOO ,  Yongseok CHOI ,  Hyuk Je KWON ,  Jaegyu PARK ,  Sun Ae KIM ,  Jin Hyuk OH ,  Myung Joon KWACK

IPC: G02B6/42 ,  H01L27/15 ,  H01L31/167 ,  H01L21/762 ,  G02B6/13 ,  G02B6/12

CPC classification number: G02B6/12004 ,  G02B6/13 ,  G02B6/4206 ,  G02B6/4214 ,  H01L21/762 ,  H01L27/15 ,  H01L31/167

Abstract: Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.

公开(公告)号：US20220115535A1

公开(公告)日：2022-04-14

申请号：US17499736

申请日：2021-10-12

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Tae Moon ROH ,  Hyun-Tak KIM ,  Sun Ae KIM

IPC: H01L29/78 ,  H01L49/00

Abstract: Provided is a monolithic metal-insulator transition device. The monolithic metal-insulator transition device includes a substrate including a driving region and a switching region, first and second source/drain regions on the driving region, a gate electrode between the first and second source/drain regions, an inlet well region formed adjacent to an upper surface of the substrate on the switching region, a control well region having a different conductivity type from the inlet well region between the inlet well region and a lower surface of the substrate, a first wiring electrically connecting the first source/drain region and the control well region, and a second wiring electrically connecting the second source/drain region and the inlet well region.

公开(公告)号：US20140048772A1

公开(公告)日：2014-02-20

申请号：US13949081

申请日：2013-07-23

Applicant: Electronics and Telecommunications Research Institute

Inventor： Gyungock KIM ,  Sang Hoon KIM ,  Ki Seok JANG ,  In Gyoo KIM ,  Jin Hyuk OH ,  Sun Ae KIM

IPC: H01L33/06 ,  H01L33/00

CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01L31/035227 ,  H01L31/035254 ,  H01L31/107 ,  H01L33/0054 ,  Y10S977/762 ,  Y10S977/774 ,  Y10S977/954

Abstract: Provided is a silicon-wafer-based germanium semiconductor photodetector configured to be able to provide properties of high gain, high sensitivity, and high speed, at a relatively low voltage. A germanium-based carrier multiplication layer (e.g., a single germanium layer or a germanium and silicon superlattice layer) may be provided on a silicon wafer, and a germanium charge layer may be provided thereon, a germanium absorption layer may be provided on the charge layer, and a polysilicon second contact layer may be provided on the absorption layer. The absorption layer may be configured to include germanium quantum dots or wires.

Abstract translation: 提供一种基于硅晶片的锗半导体光电检测器，其被配置为能够在相对低的电压下提供高增益，高灵敏度和高速度的特性。 可以在硅晶片上提供基于锗的载体倍增层（例如，单个锗层或锗和硅超晶格层），并且可以在其上提供锗电荷层，可以在电荷上提供锗吸收层 层，并且可以在吸收层上设置多晶硅第二接触层。 吸收层可以被配置为包括锗量子点或线。