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公开(公告)号：US20170261705A1
公开(公告)日：2017-09-14
申请号：US15607717
申请日：2017-05-30
Inventor： Gyungock KIM , Hyundai PARK , In Gyoo KIM , Sang Hoon KIM , Ki Seok JANG , Sang Gi KIM , Jiho JOO , Yongseok CHOI , Hyuk Je KWON , Jaegyu PARK , Sun Ae KIM , Jin Hyuk OH , Myung Joon KWACK
IPC: G02B6/42 , H01L27/15 , H01L31/167 , H01L21/762 , G02B6/13 , G02B6/12
CPC classification number: G02B6/12004 , G02B6/13 , G02B6/4206 , G02B6/4214 , H01L21/762 , H01L27/15 , H01L31/167
Abstract: Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.
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2.发明申请OPTICAL INPUT/OUTPUT DEVICE, OPTICAL ELECTRONIC SYSTEM INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME 有权光输入/输出装置，包括其的光学电子系统及其制造方法公开(公告)号：US20140346532A1
公开(公告)日：2014-11-27
申请号：US14062454
申请日：2013-10-24
Inventor： Gyungock KIM , Hyundai PARK , In Gyoo KIM , Sang Hoon KIM , Ki Seok JANG , Sang Gi KIM , Jiho JOO , Yongseok CHOI , Hyuk Je KWON , Jaegyu PARK , Sun Ae KIM , Jin Hyuk OH , Myung Joon KWACK
IPC: H01L31/167 , G02B6/42
CPC classification number: G02B6/12004 , G02B6/13 , G02B6/4206 , G02B6/4214 , H01L21/762 , H01L27/15 , H01L31/167
Abstract: Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.
Abstract translation: 公开了一种光输入/输出装置和包括其的光电系统。 该器件包括体硅衬底，整体地集成在体硅衬底的一部分上的至少一个垂直输入光检测元件以及整体集成在体硅衬底的另一部分上的至少一个垂直输出光源元件， 垂直输入光检测元件。 垂直输出光源元件包括通过晶片接合方法与体硅衬底组合的III-V化合物半导体光源有源层。
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公开(公告)号：US20240021570A1
公开(公告)日：2024-01-18
申请号：US18347149
申请日：2023-07-05
Inventor： Jiho JOO , Yong Sung EOM , CHANMI LEE , Ki Seok JANG , GWANG-MUN CHOI , KWANG-SEONG CHOI , Jin Hyuk OH
IPC: H01L23/00
CPC classification number: H01L24/75 , H01L2224/75263 , H01L2224/75343 , H01L2224/75701 , H01L2224/75702 , H01L2224/75753 , H01L2924/401
Abstract: Provided is a bonding apparatus. The bonding apparatus includes a stage configured to accommodate a substrate, a laser light source configured to provide laser light to devices on the substrate, and a bonding plate provided between the laser light source and the stage and configured to provide the devices on the substrate. The bonding plate includes a transparent substrate; a transparent layer below the transparent substrate; an device adhesion layer below the transparent layer and a reflective pattern provided above or below the transparent substrate and the transparent layer.
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4.发明申请LOW-VOLTAGE HIGH-GAIN HIGH-SPEED GERMANIUM PHOTO DETECTOR AND METHOD OF FABRICATING THE SAME 有权低电压高增益高速锗片检测器及其制造方法公开(公告)号：US20140048772A1
公开(公告)日：2014-02-20
申请号：US13949081
申请日：2013-07-23
Inventor： Gyungock KIM , Sang Hoon KIM , Ki Seok JANG , In Gyoo KIM , Jin Hyuk OH , Sun Ae KIM
CPC classification number: H01L33/06 , B82Y20/00 , H01L31/035227 , H01L31/035254 , H01L31/107 , H01L33/0054 , Y10S977/762 , Y10S977/774 , Y10S977/954
Abstract: Provided is a silicon-wafer-based germanium semiconductor photodetector configured to be able to provide properties of high gain, high sensitivity, and high speed, at a relatively low voltage. A germanium-based carrier multiplication layer (e.g., a single germanium layer or a germanium and silicon superlattice layer) may be provided on a silicon wafer, and a germanium charge layer may be provided thereon, a germanium absorption layer may be provided on the charge layer, and a polysilicon second contact layer may be provided on the absorption layer. The absorption layer may be configured to include germanium quantum dots or wires.
Abstract translation: 提供一种基于硅晶片的锗半导体光电检测器，其被配置为能够在相对低的电压下提供高增益，高灵敏度和高速度的特性。 可以在硅晶片上提供基于锗的载体倍增层（例如，单个锗层或锗和硅超晶格层），并且可以在其上提供锗电荷层，可以在电荷上提供锗吸收层 层，并且可以在吸收层上设置多晶硅第二接触层。 吸收层可以被配置为包括锗量子点或线。
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Patent Agency Ranking
公开(公告)号：US20230391956A1
公开(公告)日：2023-12-07
申请号：US18205153
申请日：2023-06-02
Inventor： GWANG-MUN CHOI , Yong Sung EOM , Jiho JOO , KWANG-SEONG CHOI , Seok-Hwan MOON , Jin Hyuk OH , Ho-Gyeong YUN , CHANMI LEE , Ki Seok JANG
IPC: C08G77/18
CPC classification number: C08G77/18
Abstract: Provided is an organic-inorganic compound including a first structural body and a curable reactive group, wherein the first structural body may have a structure in which silane and isohexide are chemically bonded through a silyl ether bond.
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6.发明公开公开(公告)号：US20230326810A1
公开(公告)日：2023-10-12
申请号：US18297461
申请日：2023-04-07
Inventor： GWANG-MUN CHOI , Yong Sung EOM , Jiho JOO , KWANG-SEONG CHOI , Seok-Hwan MOON , Jin Hyuk OH , Ho-Gyeong YUN , CHANMI LEE , Ki Seok JANG
CPC classification number: H01L22/20 , H05B6/6491 , H05B6/645 , H01L21/565
Abstract: Provided are a microwave heating device and a method for manufacturing a semiconductor packaging using the same. The microwave heating device includes a microwave generator configured to generate microwaves, a microwave absorbing layer configured to receive the microwaves so as to be heated, a temperature measuring layer provided on the microwave absorbing layer, a sensor configured to detect a temperature of the temperature measuring layer, and a controller connected to the sensor and the microwave generator to determine the temperature of the microwave absorbing layer using a detection signal of the sensor, the controller being configured to control a voltage of the microwaves provided from the microwave generator based on the temperature of the microwave absorbing layer.
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公开(公告)号：US20170309589A1
公开(公告)日：2017-10-26
申请号：US15423473
申请日：2017-02-02
Inventor： Myungjoon KWACK , Gyungock KIM , Jaegyu PARK , Jin Hyuk OH , Jiho JOO
IPC: H01L23/00 , H01L25/065
CPC classification number: H01L24/32 , H01L24/05 , H01L24/16 , H01L24/48 , H01L24/73 , H01L24/83 , H01L25/0657 , H01L25/50 , H01L2224/04026 , H01L2224/05551 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05666 , H01L2224/13101 , H01L2224/16145 , H01L2224/16225 , H01L2224/27013 , H01L2224/32111 , H01L2224/32145 , H01L2224/48091 , H01L2224/48227 , H01L2224/73253 , H01L2224/73265 , H01L2224/83191 , H01L2224/83194 , H01L2224/83201 , H01L2224/83385 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06558 , H01L2225/06589 , H01L2924/00014 , H01L2924/10158 , H01L2924/15311 , H01L2224/45099 , H01L2924/014
Abstract: Provided are a semiconductor device and a method for manufacturing the same. The semiconductor device according to an embodiment of the inventive concept includes a first semiconductor chip having a recess portion in one surface thereof; a first adhesion pattern filled within the recess portion of the first semiconductor chip; and a second semiconductor chip disposed on the first adhesion pattern. The second semiconductor chip may represent improved heat dissipation characteristics.
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公开(公告)号：US20170269298A1
公开(公告)日：2017-09-21
申请号：US15607726
申请日：2017-05-30
Inventor： Gyungock KIM , Hyundai PARK , In Gyoo KIM , Sang Hoon KIM , Ki Seok JANG , Sang Gi KIM , Jiho JOO , Yongseok CHOI , Hyuk Je KWON , Jaegyu PARK , Sun Ae KIM , Jin Hyuk OH , myung joon KWACK
IPC: G02B6/12 , G02B6/13 , H01L27/15 , G02B6/42 , H01L21/762
CPC classification number: G02B6/12004 , G02B6/13 , G02B6/4206 , G02B6/4214 , H01L21/762 , H01L27/15 , H01L31/167
Abstract: Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.
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公开(公告)号：US20160211402A1
公开(公告)日：2016-07-21
申请号：US14812981
申请日：2015-07-29
Inventor： Jiho JOO , Gyungock KIM , Myungjoon KWACK , Sang Hoon KIM , Sun Ae KIM , In Gyoo KIM , Jaegyu PARK , Jin Hyuk OH , Ki Seok JANG
IPC: H01L31/109 , H01L31/0224 , H01L31/0352 , H01L31/0304 , H01L31/028
CPC classification number: H01L31/022416 , H01L31/03529 , H01L31/1075 , H01L31/1808 , Y02E10/50 , Y02P70/521
Abstract: Provided is a photodetector including a substrate, a first doped region on the substrate, a second doped region having a ring structure, wherein the second doped region is provided in the substrate, surrounds the first doped region and is horizontally spaced apart from a side of the first doped region, an optical absorption layer on the first doped region, a contact layer on the optical absorption layer, a first electrode on the contact layer, and a second electrode on the second doped region.
Abstract translation: 提供了一种光电探测器，其包括衬底，衬底上的第一掺杂区域，具有环形结构的第二掺杂区域，其中第二掺杂区域设置在衬底中，围绕第一掺杂区域并且与 第一掺杂区域，第一掺杂区域上的光吸收层，光吸收层上的接触层，接触层上的第一电极和第二掺杂区域上的第二电极。
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