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公开(公告)号：US20140348194A1
公开(公告)日：2014-11-27
申请号：US14195778
申请日：2014-03-03
Inventor： Hyundai PARK , Gyungock KIM
IPC: H01S5/183
CPC classification number: H01S5/0218 , H01S5/021 , H01S5/0215 , H01S5/0422 , H01S5/18308
Abstract: Provided is a vertical-cavity surface-emitting laser (VCSEL). The VCSEL includes a silicon substrate, a lower reflective layer disposed on the silicon substrate, a light generation laser disposed on the lower reflective layer, and an upper reflective layer disposed on the light generation layer. The lower reflective layer, the light generation layer, and the upper reflective layer may include a III-V semiconductor light source-active layer monolithically integrated on a first impurity layer by wafer bonding.
Abstract translation: 提供了垂直腔表面发射激光器（VCSEL）。 VCSEL包括硅衬底，设置在硅衬底上的下反射层，设置在下反射层上的发光激光器和设置在光产生层上的上反射层。 下反射层，发光层和上反射层可以包括通过晶片接合单片地集成在第一杂质层上的III-V半导体光源有源层。
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公开(公告)号：US20140105235A1
公开(公告)日：2014-04-17
申请号：US13776428
申请日：2013-02-25
Inventor： In Gyoo KIM , Gyungock KIM , Sang Hoon KIM , Ki Seok JANG , JiHo JOO
IPC: H01S5/30
CPC classification number: H01S5/3031 , G02B6/12004 , H01S5/021 , H01S5/026 , H01S5/0425 , H01S5/3223 , Y10S438/933
Abstract: Provided are a semiconductor laser and a method of manufacturing the same. The method includes: providing a substrate including a buried oxide layer; forming patterns, which includes an opening part to expose the substrate, by etching the buried oxide layer; forming a germanium single crystal layer in the opening part; and forming an optical coupler, which is adjacent to the germanium single crystal layer, on the substrate.
Abstract translation: 提供半导体激光器及其制造方法。 该方法包括：提供包括掩埋氧化物层的衬底; 形成图案，其包括通过蚀刻所述掩埋氧化物层而露出所述衬底的开口部分; 在开口部分形成锗单晶层; 并在基片上形成与锗单晶层相邻的光耦合器。
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3.发明申请LOW-VOLTAGE HIGH-GAIN HIGH-SPEED GERMANIUM PHOTO DETECTOR AND METHOD OF FABRICATING THE SAME 有权低电压高增益高速锗片检测器及其制造方法公开(公告)号：US20140048772A1
公开(公告)日：2014-02-20
申请号：US13949081
申请日：2013-07-23
Inventor： Gyungock KIM , Sang Hoon KIM , Ki Seok JANG , In Gyoo KIM , Jin Hyuk OH , Sun Ae KIM
CPC classification number: H01L33/06 , B82Y20/00 , H01L31/035227 , H01L31/035254 , H01L31/107 , H01L33/0054 , Y10S977/762 , Y10S977/774 , Y10S977/954
Abstract: Provided is a silicon-wafer-based germanium semiconductor photodetector configured to be able to provide properties of high gain, high sensitivity, and high speed, at a relatively low voltage. A germanium-based carrier multiplication layer (e.g., a single germanium layer or a germanium and silicon superlattice layer) may be provided on a silicon wafer, and a germanium charge layer may be provided thereon, a germanium absorption layer may be provided on the charge layer, and a polysilicon second contact layer may be provided on the absorption layer. The absorption layer may be configured to include germanium quantum dots or wires.
Abstract translation: 提供一种基于硅晶片的锗半导体光电检测器，其被配置为能够在相对低的电压下提供高增益，高灵敏度和高速度的特性。 可以在硅晶片上提供基于锗的载体倍增层（例如，单个锗层或锗和硅超晶格层），并且可以在其上提供锗电荷层，可以在电荷上提供锗吸收层 层，并且可以在吸收层上设置多晶硅第二接触层。 吸收层可以被配置为包括锗量子点或线。
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公开(公告)号：US20170294762A1
公开(公告)日：2017-10-12
申请号：US15230313
申请日：2016-08-05
Inventor： In Gyoo KIM , Gyungock KIM , Sang Hoon KIM
CPC classification number: H01S5/3223 , H01S5/021 , H01S5/041 , H01S5/0424 , H01S5/0425 , H01S5/105 , H01S5/187 , H01S5/3086 , H01S5/3224 , H01S5/4006
Abstract: Provided is a laser device according to an embodiment of the inventive concept. The laser device includes: a semiconductor substrate; a germanium single crystal layer on the semiconductor substrate; and a pumping light source disposed on the germanium single crystal layer and configured to emit light toward the germanium single crystal layer, wherein the germanium single crystal layer receives the light to thereby output laser.
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公开(公告)号：US20170261705A1
公开(公告)日：2017-09-14
申请号：US15607717
申请日：2017-05-30
Inventor： Gyungock KIM , Hyundai PARK , In Gyoo KIM , Sang Hoon KIM , Ki Seok JANG , Sang Gi KIM , Jiho JOO , Yongseok CHOI , Hyuk Je KWON , Jaegyu PARK , Sun Ae KIM , Jin Hyuk OH , Myung Joon KWACK
IPC: G02B6/42 , H01L27/15 , H01L31/167 , H01L21/762 , G02B6/13 , G02B6/12
CPC classification number: G02B6/12004 , G02B6/13 , G02B6/4206 , G02B6/4214 , H01L21/762 , H01L27/15 , H01L31/167
Abstract: Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.
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Patent Agency Ranking
公开(公告)号：US20160260805A1
公开(公告)日：2016-09-08
申请号：US15056660
申请日：2016-02-29
Inventor： Sang Hoon KIM , Gyungock KIM , In Gyoo KIM
IPC: H01L29/161 , H01L21/3105 , H01L21/02 , H01L29/06 , H01L21/311
CPC classification number: H01L29/161 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/02647
Abstract: Provided is a germanium-on-insulator substrate. The germanium-on-insulator substrate includes a bulk silicon substrate, an oxide film which is disposed on the bulk silicon substrate and has a first region exposing a portion of the bulk silicon substrate, a silicon layer which covers a portion of the top surface of the oxide film and does not cover the first region, a germanium layer which contacts the bulk silicon substrate exposed through the first region and is disposed on the oxide film, and an insulating layer which covers the oxide film and the silicon layer and exposes the top surface of the germanium layer.
Abstract translation: 提供绝缘体上的锗基板。 绝缘体上的衬底包括体硅衬底，氧化膜，其设置在体硅衬底上并且具有暴露本体硅衬底的一部分的第一区域;覆盖顶部表面的一部分的硅层; 氧化膜并且不覆盖第一区域，接触通过第一区域暴露的体硅衬底并设置在氧化物膜上的锗层，以及覆盖氧化物膜和硅层并暴露顶部的绝缘层 锗层的表面。
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公开(公告)号：US20160259126A1
公开(公告)日：2016-09-08
申请号：US14820406
申请日：2015-08-06
Inventor： Myungjoon KWACK , Gyungock KIM , Jaegyu PARK , Ki Seok JANG , Jiho JOO
CPC classification number: G02B6/423 , G02B6/3644 , G02B6/4239 , G02B6/4249
Abstract: An optical coupling device comprises an optical fiber block including a first block part and a second block part contacting with one side of the first block part, an optical fiber penetrating the optical fiber block and having an end surface exposed at a bottom surface of the optical fiber block, a semiconductor chip disposed below the optical fiber block and having an optical input/output element disposed on a top surface of the semiconductor chip to correspond with the end surface of the optical fiber, and a planarization layer disposed on the top surface of the semiconductor chip and having a recess region. A bottom surface of the first block part has a higher level than that of the second block part. The bottom surface of the second block part contacts with a bottom of the recess region. The optical fiber is optically coupled with the optical input/output element.
Abstract translation: 光耦合装置包括光纤块，该光纤块包括与第一块部分的一侧接触的第一块部分和第二块部分，穿过光纤块的光纤，并且具有暴露在光学器件的底表面处的端面 光纤块，设置在光纤块下方的半导体芯片，并且具有设置在半导体芯片的顶表面上的光输入/输出元件，以对应于光纤的端面;以及平坦化层，设置在光纤的顶表面上 半导体芯片并具有凹部区域。 第一块部分的底表面具有比第二块部分更高的水平。 第二块部的底面与凹部的底部接触。 光纤与光输入/输出元件光学耦合。
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公开(公告)号：US20150277054A1
公开(公告)日：2015-10-01
申请号：US14159355
申请日：2014-01-20
Inventor： Hyundai PARK , Taeyong KIM , JiHo JOO , Jaegyu PARK , Gyungock KIM
CPC classification number: G02B6/305 , G02B6/12002 , G02B6/1228 , G02B6/14 , G02B2006/12092
Abstract: Provided are an optical coupler and an optical device including the same. The optical coupler includes: a substrate; a buffer layer on the substrate; and an optical coupling layer including a horizontal mode expander layer and a vertical mode expander layer, wherein the horizontal mode expander layer expands in one direction on the buffer layer, and wherein the vertical mode expander layer adjusts a stepped difference between the horizontal mode expander layer and a plurality of optical transmission devices having different diameters or sectional areas and connected to both sides of the horizontal mode expander layer, and the vertical mode expander layer is disposed on a side of the horizontal mode expander layer to minimize optical loss between the plurality of optical transmission devices.
Abstract translation: 提供一种光耦合器和包括该光耦合器的光学装置。 光耦合器包括：基板; 衬底上的缓冲层; 以及包括水平模式扩展器层和垂直模式扩展器层的光学耦合层，其中水平模式扩展器层在缓冲层上在一个方向上扩展，并且其中垂直模式扩展器层调整水平模式扩展器层 以及具有不同直径或截面积并连接到水平模式扩展器层的两侧的多个光传输装置，并且垂直模式扩展器层设置在水平模式扩展器层的一侧，以使多个 光传输设备。
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9.发明申请OPTICAL DEVICE MODULE AND OPTICAL COMMUNICATION NETWORK SYSTEM USING THE SAME 有权光学设备模块和使用该光学通信网络系统的光通信网络系统公开(公告)号：US20140241662A1
公开(公告)日：2014-08-28
申请号：US13934006
申请日：2013-07-02
Inventor： Sahnggi PARK , Sang Gi KIM , Seong Wook YOO , Gyungock KIM
IPC: G02B6/12
CPC classification number: H04B10/27 , G02B6/12004 , G02B6/29373 , G02B6/34 , G02B6/4214 , G02B2006/12114
Abstract: An optical device module includes a substrate, an interlayer insulating layer on the substrate, an optical waveguide on the interlayer insulating layer, an optical device on the optical waveguide, and a prism disposed between the optical device and the optical waveguide. The prism has a refractive index greater than a refractive index of the optical waveguide.
Abstract translation: 光学器件模块包括衬底，衬底上的层间绝缘层，层间绝缘层上的光波导，光波导上的光学器件，以及设置在光学器件和光波导之间的棱镜。 棱镜的折射率大于光波导的折射率。
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10.发明申请公开(公告)号：US20140169389A1
公开(公告)日：2014-06-19
申请号：US13941038
申请日：2013-07-12
Inventor： Taeyong KIM , JiHo JOO , Gyungock KIM
IPC: H04B10/60
CPC classification number: G02B6/4249 , G02B6/4204 , G02B6/4214
Abstract: An optical receiver module includes a demultiplexer, an optical device including a right-angled mirror reflecting individual optical signals transmitted from the demultiplexer and a plurality of lenses receiving the reflected optical signals, and a plurality of photodetectors spaced apart from the plurality of lenses by a predetermined distance. The plurality of photodetectors converts the individual optical signals into electrical signals. The optical device and the demultiplexer are formed into a united structure. A distance between the lenses is equal to a distance between the photodetectors.
Abstract translation: 一种光接收机模块，包括：解复用器，光学装置包括反射从解复用器发送的各个光信号的直角镜和接收反射的光信号的多个透镜;以及多个与多个透镜间隔开的光检测器 预定距离。 多个光电检测器将各个光信号转换为电信号。 光学器件和解复用器形成为一体的结构。 透镜之间的距离等于光电检测器之间的距离。
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