公开(公告)号：US06315574B1

公开(公告)日：2001-11-13

申请号：US09488647

申请日：2000-01-20

申请人： Emil Kamieniecki ,  Jerzy Ruzyllo

发明人： Emil Kamieniecki ,  Jerzy Ruzyllo

IPC分类号： H01L2166

CPC分类号： H01L22/14 ,  G01R31/2648 ,  G01R31/2656 ,  G01R31/2831 ,  H01L22/10 ,  H01L2924/0002 ,  H01L2924/00

摘要： An apparatus and method for the real-time, in-line testing of semiconductor wafers during the manufacturing process. In one embodiment the apparatus includes a probe assembly within a semiconductor wafer processing line. As each wafer passes adjacent the probe assembly, a source of modulated light, within the probe assembly, having a predetermined wavelength and frequency of modulation, impinges upon the wafer. A sensor in the probe assembly measures the surface photovoltage induced by the modulated light. A computer then uses the induced surface photovoltage to determine various electrical characteristics of the wafer.

摘要翻译： 一种用于在制造过程中对半导体晶片进行实时在线测试的装置和方法。 在一个实施例中，该装置包括半导体晶片处理线内的探针组件。 当每个晶片通过相邻的探针组件时，探针组件内具有预定波长和调制频率的调制光源照射在晶片上。 探头组件中的传感器测量由调制光引起的表面光电压。 然后，计算机使用感应表面光电压来确定晶片的各种电特性。

公开(公告)号：US6069017A

公开(公告)日：2000-05-30

申请号：US853171

申请日：1997-05-08

申请人： Emil Kamieniecki ,  Jerzy Ruzyllo

发明人： Emil Kamieniecki ,  Jerzy Ruzyllo

IPC分类号： G01R31/26 ,  G01R31/265 ,  G01R31/28 ,  H01L21/66

CPC分类号： H01L22/14 ,  H01L22/10 ,  G01R31/2648 ,  G01R31/2656 ,  G01R31/2831 ,  H01L2924/0002

摘要： An apparatus and method for the real-time, in-line testing of semiconductor wafers during the manufacturing process. In one embodiment the apparatus includes a probe assembly within a semiconductor wafer processing line. As each wafer passes adjacent the probe assembly, a source of modulated light, within the probe assembly, having a predetermined wavelength and frequency of modulation, impinges upon the wafer. A sensor in the probe assembly measures the surface photovoltage induced by the modulated light. A computer then uses the induced surface photovoltage to determine various electrical characteristics of the wafer.

摘要翻译： 一种用于在制造过程中对半导体晶片进行实时在线测试的装置和方法。 在一个实施例中，该装置包括半导体晶片处理线内的探针组件。 当每个晶片通过相邻的探针组件时，探针组件内具有预定波长和调制频率的调制光源照射在晶片上。 探头组件中的传感器测量由调制光引起的表面光电压。 然后，计算机使用感应表面光电压来确定晶片的各种电特性。

公开(公告)号：US5091691A

公开(公告)日：1992-02-25

申请号：US280973

申请日：1988-12-07

申请人： Emil Kamieniecki ,  William C. Goldfarb ,  Michael Wollowitz

发明人： Emil Kamieniecki ,  William C. Goldfarb ,  Michael Wollowitz

IPC分类号： G01R31/265

CPC分类号： G01R31/2656

摘要： An apparatus for making ac surface photovoltage (SPV) measurements of a specimen of semiconductor material under dc bias voltage conditions includes a light source whose output beam is intensity modulated, an adjustable dc bias voltage source, a conductive base for supporting the specimen and a novel capacitance type reference electrode assembly for sensing the SPV signals. The reference electrode assembly includes in one embodiment a button made of insulating elastomeric material and attached to a rigid plate made of insulating material. A film made of insulating material and having a conductive coating on one side which serves as a reference electrode is attached to the button. When SPV measurements are being taken, the film is pressed against the specimen with pressure sufficient to hold the reference electrode in close compliance with the specimen, with pressure being applied to the plate from an external source and being transmitted from the rigid plate to the film through the elastomeric button.

摘要翻译： 用于在直流偏置电压条件下进行半导体材料样品的交流表面光电压（SPV）测量的装置包括其输出光束被强度调制的光源，可调直流偏置电压源，用于支撑样品的导电基底和新颖的 用于感测SPV信号的电容型参考电极组件。 参考电极组件在一个实施例中包括由绝缘弹性体材料制成并附接到由绝缘材料制成的刚性板的按钮。 由绝缘材料制成的薄膜，并且在一侧具有用作参考电极的导电涂层的薄膜附着到按钮上。 当进行SPV测量时，将膜压在足以使参考电极与试样紧密一致的压力下压在样品上，压力从外部源施加到板上并从刚性板传递到膜 通过弹性按钮。

公开(公告)号：US08896338B2

公开(公告)日：2014-11-25

申请号：US13523180

申请日：2012-06-14

申请人： Emil Kamieniecki

发明人： Emil Kamieniecki

IPC分类号： G01R31/02

CPC分类号： H01L22/14 ,  G01R31/2648

摘要： A method for characterizing the electronic properties of a semiconductor sample by exploiting transients in measured photoconductance, the transients being induced by illuminating the semiconductor sample with a small probing illumination that is superimposed over a larger background illumination. In one embodiment, a pulse-type probing illumination is utilized, with either the intensity of the probing illumination being gradually reduced or the intensity of the background illumination being gradually increased until the measured photoconductance rise and decay in the sample are substantially exponential. In another embodiment, a continuous probing illumination with a sinusoidally-modulated intensity is utilized, the modulated intensity of the probing illumination being gradually adjusted until the measured photoconductance is linearly dependent thereupon.

摘要翻译： 通过利用测量光电导中的瞬变来表征半导体样品的电子特性的方法，通过用较大的背景照明上叠加的小的探测照明照射半导体样品来诱发瞬变。 在一个实施例中，使用脉冲型探测照明，其中探测照明的强度逐渐减小或背景照明的强度逐渐增加，直到所测样品中的测量的光电导的上升和衰减为基本指数。 在另一个实施例中，利用具有正弦调制强度的连续探测照明，逐渐调节探测照明的调制强度，直到所测量的光电导依赖于其为止。

公开(公告)号：US20130257472A1

公开(公告)日：2013-10-03

申请号：US13523180

申请日：2012-06-14

申请人： Emil Kamieniecki

发明人： Emil Kamieniecki

IPC分类号： G01R31/26

CPC分类号： H01L22/14 ,  G01R31/2648

摘要： A method for characterizing the electronic properties of a semiconductor sample by exploiting transients in measured photoconductance, the transients being induced by illuminating the semiconductor sample with a small probing illumination that is superimposed over a larger background illumination. In one embodiment, a pulse-type probing illumination is utilized, with either the intensity of the probing illumination being gradually reduced or the intensity of the background illumination being gradually increased until the measured photoconductance rise and decay in the sample are substantially exponential. In another embodiment, a continuous probing illumination with a sinusoidally-modulated intensity is utilized, the modulated intensity of the probing illumination being gradually adjusted until the measured photoconductance is linearly dependent thereupon.

摘要翻译： 通过利用测量光电导中的瞬变来表征半导体样品的电子特性的方法，通过用较大的背景照明上叠加的小的探测照明照射半导体样品来诱发瞬变。 在一个实施例中，使用脉冲型探测照明，其中探测照明的强度逐渐减小或背景照明的强度逐渐增加，直到所测样品中的测量的光电导的上升和衰减为基本指数。 在另一个实施例中，利用具有正弦调制强度的连续探测照明，逐渐调节探测照明的调制强度，直到所测量的光电导依赖于其为止。

公开(公告)号：US08232817B2

公开(公告)日：2012-07-31

申请号：US12700564

申请日：2010-02-04

申请人： Emil Kamieniecki

发明人： Emil Kamieniecki

IPC分类号： G01R31/302

CPC分类号： G01R31/2648 ,  G01R31/2656 ,  G01R31/2831

摘要： The present disclosure provides methods and apparatus that enable characterization of an electrical property of a semiconductor specimen, e.g., dopant concentration of a near-surface region of the specimen. In exemplary method, a target depth for measurement is selected. This thickness may, for example, correspond to a nominal production thickness of a thin active device region of the specimen. A light is adjusted to an intensity selected to characterize a target region of the specimen having a thickness no greater than the target depth and a surface of the specimen is illuminated with the light. An AC voltage signal induced in the specimen by the light is measured and this AC voltage may be used to quantify an aspect of the electrical property, e.g., to determine dopant concentration, of the target region.

摘要翻译： 本公开提供了能够表征半导体样品的电性质的方法和装置，例如样品的近表面区域的掺杂剂浓度。 在示例性方法中，选择用于测量的目标深度。 该厚度可以例如对应于样品的薄活性元件区域的标称生产厚度。 将光调整到选择的强度，以表征具有不大于目标深度的厚度的样本的目标区域，并且用光照射样本的表面。 测量通过光在样本中感应的AC电压信号，并且该AC电压可用于量化目标区域的电性质的一个方面，例如确定掺杂剂浓度。

公开(公告)号：US20100060307A1

公开(公告)日：2010-03-11

申请号：US12206237

申请日：2008-09-08

申请人： Emil Kamieniecki

发明人： Emil Kamieniecki

IPC分类号： G01R31/26

CPC分类号： G01R31/2648 ,  G01R31/308 ,  H01L22/14 ,  H01L31/186 ,  Y02E10/50 ,  Y02P70/521

摘要： A system and method for characterizing electronic properties of a semiconductor sample includes illuminating the surface of the semiconductor sample with a pulse of light, measuring a photoconductance decay in the semiconductor sample after the cessation of the first pulse of light, and analyzing the photoconductance decay. The electronic properties include properties associated with at least one of the bulk of the semiconductor sample and the surface of the semiconductor sample. The pulse of light has a predetermined duration and photon energy higher than energy gap of the semiconductor. The analyzing step determines a first component of the photoconductance decay substantially associated with point imperfections in the semiconductor sample and at least one second component of the photoconductance decay substantially associated with extended imperfections in the semiconductor sample.

摘要翻译： 用于表征半导体样品的电子特性的系统和方法包括用光脉冲照射半导体样品的表面，在停止第一脉冲光后测量半导体样品中的光电导衰减，并分析光电导衰减。 电子性质包括与半导体样品的主体和半导体样品的表面中的至少一个相关联的性质。 光的脉冲具有比半导体的能隙高的预定持续时间和光子能量。 分析步骤确定与半导体样品中的点缺陷基本相关的光电导衰减的第一分量和基本上与半导体样品中的延伸缺陷相关联的光电导衰减的至少一个第二分量。

公开(公告)号：US07663385B2

公开(公告)日：2010-02-16

申请号：US10547153

申请日：2003-12-15

申请人： Emil Kamieniecki

发明人： Emil Kamieniecki

IPC分类号： G01R31/302

CPC分类号： G01R31/2648 ,  G01R31/2656 ,  G01R31/2831

摘要： The present disclosure provides methods and apparatus that enable characterization of an electrical property of a semiconductor specimen, e.g., dopant concentration of a near-surface region of the specimen. In exemplary method, a target depth for measurement is selected. This thickness may, for example, correspond to a nominal production thickness of a thin active device region of the specimen. A light is adjusted to an intensity selected to characterize a target region of the specimen having a thickness no greater than the target depth and a surface of the specimen is illuminated with the light. An AC voltage signal induced in the specimen by the light is measured and this AC voltage may be used to quantify an aspect of the electrical property, e.g., to determine dopant concentration, of the target region.

摘要翻译： 本公开提供了能够表征半导体样品的电性质的方法和装置，例如样品的近表面区域的掺杂剂浓度。 在示例性方法中，选择用于测量的目标深度。 该厚度可以例如对应于样品的薄活性元件区域的标称生产厚度。 将光调整到选择的强度，以表征具有不大于目标深度的厚度的样本的目标区域，并且用光照射样本的表面。 测量通过光在样本中感应的AC电压信号，并且该AC电压可用于量化目标区域的电性质的一个方面，例如确定掺杂剂浓度。

公开(公告)号：US06967490B1

公开(公告)日：2005-11-22

申请号：US10402804

申请日：2003-03-28

申请人： Emil Kamieniecki ,  Jerzy Ruzyllo

发明人： Emil Kamieniecki ,  Jerzy Ruzyllo

IPC分类号： H01L21/66 ,  G01R31/302

CPC分类号： H01L22/14 ,  H01L2924/0002 ,  H01L2924/00

摘要： An apparatus and method for the real-time, in-line testing of semiconductor wafers during the manufacturing process. In one embodiment the apparatus includes a probe assembly within a semiconductor wafer processing line. As each wafer passes adjacent the probe assembly, a source of modulated light, within the probe assembly, having a predetermined wavelength and frequency of modulation, impinges upon the wafer. A sensor in the probe assembly measures the surface photovoltage induced by the modulated light. A computer then uses the induced surface photovoltage to determine various electrical characteristics of the wafer.

公开(公告)号：US06803588B2

公开(公告)日：2004-10-12

申请号：US09974024

申请日：2001-10-10

申请人： Emil Kamieniecki

发明人： Emil Kamieniecki

IPC分类号： H01L2100

CPC分类号： H01L21/02046 ,  H01L22/14 ,  Y10S134/902

摘要： An apparatus for surface treating a semiconductor wafer includes a surface treatment chamber and a source of radiation. The semiconductor wafer disposed inside the chamber is illuminated with radiation sufficient to create a plurality of electron-hole pairs near the surface of the wafer and to desorb ions and molecules adsorbed on the surface of the wafer.

摘要翻译： 用于表面处理半导体晶片的装置包括表面处理室和辐射源。 设置在室内的半导体晶片被辐射照射，足以在晶片表面附近产生多个电子 - 空穴对，并且吸附在晶片表面上的离子和分子解吸。