公开(公告)号：US09110127B2

公开(公告)日：2015-08-18

申请号：US13541541

申请日：2012-07-03

申请人： Emil Kamieniecki

发明人： Emil Kamieniecki

IPC分类号： G01R31/20 ,  G01R31/26 ,  G01R31/265 ,  G01R31/28

CPC分类号： G01R31/2648 ,  G01R31/2656 ,  G01R31/2831

摘要： The present disclosure provides methods and apparatus that enable characterization of an electrical property of a semiconductor specimen, e.g., dopant concentration of a near-surface region of the specimen. In exemplary method, a target depth for measurement is selected. This thickness may, for example, correspond to a nominal production thickness of a thin active device region of the specimen. A light is adjusted to an intensity selected to characterize a target region of the specimen having a thickness no greater than the target depth and a surface of the specimen is illuminated with the light. An AC voltage signal induced in the specimen by the light is measured and this AC voltage may be used to quantify an aspect of the electrical property, e.g., to determine dopant concentration, of the target region.

摘要翻译： 本公开提供了能够表征半导体样品的电性质的方法和装置，例如样品的近表面区域的掺杂剂浓度。 在示例性方法中，选择用于测量的目标深度。 该厚度可以例如对应于样品的薄活性元件区域的标称生产厚度。 将光调整到选择的强度，以表征具有不大于目标深度的厚度的样本的目标区域，并且用光照射样本的表面。 测量通过光在样本中感应的AC电压信号，并且该AC电压可用于量化目标区域的电性质的一个方面，例如确定掺杂剂浓度。

公开(公告)号：US4873436A

公开(公告)日：1989-10-10

申请号：US46562

申请日：1987-05-04

申请人： Emil Kamieniecki ,  Leszek Reiss ,  William C. Goldfarb

发明人： Emil Kamieniecki ,  Leszek Reiss ,  William C. Goldfarb

IPC分类号： G01R29/14 ,  G01R29/24 ,  G01R31/265 ,  G01T1/28 ,  G01T1/29 ,  G03G5/00 ,  G03G5/02 ,  G03G15/00 ,  G03G15/054 ,  G03G15/22 ,  H04N1/04 ,  H04N1/113 ,  H04N5/30

CPC分类号： G01T1/28 ,  G01R29/24 ,  G01R31/2656 ,  G01T1/246 ,  G03G15/00 ,  G03G15/054 ,  G03G15/221 ,  G03G5/00 ,  G03G5/02 ,  H04N5/30

摘要： A method and apparatus are described for the nondestructive readout of a latent electrostatic image formed on a sheet or layer of insulating material. A sheet or layer of semiconductor material is disposed in relatively close proximity to the insulating material. A latent electrostatic image formed on the insulating material (by any known means) causes a surface depletion layer to be produced by induction at the surface of the semiconductor material. The location and distribution of the accumulated charges on the semiconductor material are read out as analog electrical signals corresponding to the AC surface photovoltage induced on the semiconductor material as the semiconductor material is scanned with a low intensity modulated light beam of appropriate wavelength, the magnitude of the analog signals depending on the local charge density. The analog electrical signals so obtained are then digitized, processed and stored and/or displayed.

摘要翻译： 对于在绝缘材料的片材或层上形成的静电潜像的非破坏性读出，描述了一种方法和装置。 半导体材料的片或层设置成相对靠近绝缘材料。 在绝缘材料上形成的静电潜像（通过任何已知的方式）通过在半导体材料的表面进行感应而产生表面耗尽层。 半导体材料上的累积电荷的位置和分布被读出作为模拟电信号，对应于半导体材料上感应的AC表面光电压，因为半导体材料用适当波长的低强度调制光束扫描， 模拟信号取决于局部电荷密度。 然后如此获得的模拟电信号被数字化，处理和存储和/或显示。

公开(公告)号：US4847496A

公开(公告)日：1989-07-11

申请号：US46467

申请日：1987-05-04

申请人： Emil Kamieniecki

发明人： Emil Kamieniecki

IPC分类号： G01R29/14 ,  G01R29/24 ,  G01R31/265 ,  G01T1/28 ,  G01T1/29 ,  G03G5/00 ,  G03G5/02 ,  G03G15/00 ,  G03G15/054 ,  G03G15/22 ,  H04N1/04 ,  H04N1/113 ,  H04N5/30

CPC分类号： G01T1/28 ,  G01R29/24 ,  G01R31/2656 ,  G01T1/246 ,  G03G15/00 ,  G03G15/054 ,  G03G15/221 ,  G03G5/00 ,  G03G5/02 ,  H04N5/30

摘要： A method and apparatus are described for the nondestructive readout of a latent electrostatic image formed on a sheet or layer of insulating material. A sheet or layer of semiconductor material is disposed in relatively close proximity to the insulating material. A latent electrostatic image formed on the insulating material (by any known means) causes a surface depletion layer to be produced by induction at the surface of the semiconductor material. The location and distribution of the accumulated charges on the semiconductor material are read out as analog electrical signals corresponding to the AC surface photovoltage induced on the semiconductor material as the semiconductor material is scanned with a low intensity modulated light beam of appropriate wavelength, the magnitude of the analog signals depending on the local charge density. The analog electrical signals so obtained are then digitized, processed and stored and/or displayed.

摘要翻译： 对于在绝缘材料的片材或层上形成的静电潜像的非破坏性读出，描述了一种方法和装置。 半导体材料的片或层设置成相对靠近绝缘材料。 在绝缘材料上形成的静电潜像（通过任何已知的方式）通过在半导体材料的表面进行感应而产生表面耗尽层。 半导体材料上的累积电荷的位置和分布被读出作为模拟电信号，对应于半导体材料上感应的AC表面光电压，因为半导体材料用适当波长的低强度调制光束扫描， 模拟信号取决于局部电荷密度。 然后如此获得的模拟电信号被数字化，处理和存储和/或显示。

公开(公告)号：US4663526A

公开(公告)日：1987-05-05

申请号：US719725

申请日：1985-04-03

申请人： Emil Kamieniecki

发明人： Emil Kamieniecki

IPC分类号： G01R29/14 ,  G01R29/24 ,  G01R31/265 ,  G01T1/28 ,  G01T1/29 ,  G03G5/00 ,  G03G5/02 ,  G03G15/00 ,  G03G15/054 ,  G03G15/22 ,  H04N1/04 ,  H04N1/113 ,  H04N5/30 ,  G01T1/24 ,  H01L31/00

CPC分类号： G01T1/28 ,  G01R29/24 ,  G01R31/2656 ,  G01T1/246 ,  G03G15/00 ,  G03G15/054 ,  G03G15/221 ,  G03G5/00 ,  G03G5/02 ,  H04N5/30

摘要： A method and apparatus are described for the nondestructive readout of a latent electrostatic image formed on a sheet or layer of insulating material. A sheet or layer of semiconductor material is disposed in relatively close proximity to the insulating material. The latent electrostatic image formed on the insulating material causes a surface depletion layer to by produced by induction at the surface of the semiconductor material. The location and distribution of the accumulated charges on the semiconductor material are read out as analog electrical signals corresponding to the ac surface photovoltage induced on the semiconductor material as the semiconductor material is scanned with a low intensity modulated light beam of appropriate wavelength, the magnitude of the analog signals depending on the local charge density. The analog electrical signals so obtained are then digitized, processed and stored and/or displayed.

摘要翻译： 对于在绝缘材料的片材或层上形成的静电潜像的非破坏性读出，描述了一种方法和装置。 半导体材料的片或层设置成相对靠近绝缘材料。 形成在绝缘材料上的静电潜像通过在半导体材料的表面进行感应而产生表面耗尽层。 半导体材料上的累积电荷的位置和分布被读出作为模拟电信号，对应于在半导体材料上感应的交流表面光电压，因为半导体材料用适当波长的低强度调制光束扫描， 模拟信号取决于局部电荷密度。 然后如此获得的模拟电信号被数字化，处理和存储和/或显示。

公开(公告)号：US20170269239A1

公开(公告)日：2017-09-21

申请号：US15413912

申请日：2017-01-24

申请人： Emil Kamieniecki

发明人： Emil Kamieniecki

IPC分类号： G01T3/08 ,  G01T7/00 ,  G01T1/24

CPC分类号： G01T3/08 ,  G01T1/24 ,  G01T7/00 ,  Y02E10/50

摘要： A radiation detector includes a block of a material capable of interacting with ionizing radiation to produce charge carriers, an inductor positioned adjacent to the block and having an inductance that depends on a number of the charge carriers in the block, and a sensing circuit coupled to sense a change in the inductance and detect the ionizing radiation base on the change. The sensing circuit may particularly contain an RF synthesizer that drives the inductance, e.g., an LC circuit containing the inductance, and an analyzer that detects changes in the response of the inductance.

公开(公告)号：US20100156445A1

公开(公告)日：2010-06-24

申请号：US12700564

申请日：2010-02-04

申请人： Emil Kamieniecki

发明人： Emil Kamieniecki

IPC分类号： G01R31/302

CPC分类号： G01R31/2648 ,  G01R31/2656 ,  G01R31/2831

摘要： The present disclosure provides methods and apparatus that enable characterization of an electrical property of a semiconductor specimen, e.g., dopant concentration of a near-surface region of the specimen. In exemplary method, a target depth for measurement is selected. This thickness may, for example, correspond to a nominal production thickness of a thin active device region of the specimen. A light is adjusted to an intensity selected to characterize a target region of the specimen having a thickness no greater than the target depth and a surface of the specimen is illuminated with the light. An AC voltage signal induced in the specimen by the light is measured and this AC voltage may be used to quantify an aspect of the electrical property, e.g., to determine dopant concentration, of the target region.

摘要翻译： 本公开提供了能够表征半导体样品的电性质的方法和装置，例如样品的近表面区域的掺杂剂浓度。 在示例性方法中，选择用于测量的目标深度。 该厚度可以例如对应于样品的薄活性元件区域的标称生产厚度。 将光调整到选择的强度，以表征具有不大于目标深度的厚度的样本的目标区域，并且用光照射样本的表面。 测量通过光在样本中感应的AC电压信号，并且该AC电压可用于量化目标区域的电性质的一个方面，例如确定掺杂剂浓度。

公开(公告)号：US06909302B2

公开(公告)日：2005-06-21

申请号：US09932754

申请日：2001-08-17

申请人： Emil Kamieniecki ,  Jerzy Ruzyllo

发明人： Emil Kamieniecki ,  Jerzy Ruzyllo

IPC分类号： G01R31/26 ,  G01R31/265 ,  G01R31/28 ,  H01L21/66

CPC分类号： H01L22/14 ,  G01R31/2648 ,  G01R31/2656 ,  G01R31/2831 ,  H01L22/10 ,  H01L2924/0002 ,  H01L2924/00

摘要： An apparatus and method for the real-time, in-line testing of semiconductor wafers during the manufacturing process. In one embodiment the apparatus includes a probe assembly within a semiconductor wafer processing line. As each wafer passes adjacent the probe assembly, a source of modulated light, within the probe assembly, having a predetermined wavelength and frequency of modulation, impinges upon the wafer. A sensor in the probe assembly measures the surface photovoltage induced by the modulated light. A computer then uses the induced surface photovoltage to determine various electrical characteristics of the wafer.

摘要翻译： 一种用于在制造过程中对半导体晶片进行实时在线测试的装置和方法。 在一个实施例中，该装置包括半导体晶片处理线内的探针组件。 当每个晶片通过相邻的探针组件时，探针组件内具有预定波长和调制频率的调制光源照射在晶片上。 探头组件中的传感器测量由调制光引起的表面光电压。 然后，计算机使用感应表面光电压来确定晶片的各种电特性。

公开(公告)号：US4833324A

公开(公告)日：1989-05-23

申请号：US46454

申请日：1987-05-04

申请人： Emil Kamieniecki ,  William C. Goldfarb

发明人： Emil Kamieniecki ,  William C. Goldfarb

IPC分类号： G03B42/02 ,  G01R29/14 ,  G01R29/24 ,  G01R31/265 ,  G01T1/28 ,  G01T1/29 ,  G03F9/00 ,  G03G5/00 ,  G03G5/02 ,  G03G15/00 ,  G03G15/054 ,  G03G15/22 ,  H04N1/04 ,  H04N1/113 ,  H04N5/30

CPC分类号： G01R29/24 ,  G01R31/2656 ,  G01T1/246 ,  G01T1/28 ,  G03G15/00 ,  G03G15/04045 ,  G03G15/054 ,  G03G15/221 ,  G03G5/00 ,  G03G5/02 ,  H04N5/30

摘要： A method and apparatus are described for the nondestructive readout of a latent electrostatic image formed on a sheet or layer of insulating material. A sheet or layer of semiconductor material is disposed in relatively close proximity to the insulating material. A latent electrostatic image formed on the insulating material (by any known means) causes a surface depletion layer to be produced by induction at the surface of the semiconductor material. The location and distribution of the accumulated charges on the semiconductor material are read out as analog electrical signals corresponding to the AC surface photovoltage induced on the semiconductor material as the semiconductor material is scanned with a low intensity modulated light beam of appropriate wavelength, the magitude of the analog signals depending on the local charge density. The analog electrical signals so obtained are then digitized, processed and stored and/or displayed.

摘要翻译： 对于在绝缘材料的片材或层上形成的静电潜像的非破坏性读出，描述了一种方法和装置。 半导体材料的片或层设置成相对靠近绝缘材料。 在绝缘材料上形成的静电潜像（通过任何已知的方式）通过在半导体材料的表面进行感应而产生表面耗尽层。 半导体材料上的累积电荷的位置和分布被读出作为模拟电信号，对应于半导体材料上感应的AC表面光电压，因为半导体材料用适当波长的低强度调制光束扫描， 模拟信号取决于局部电荷密度。 然后如此获得的模拟电信号被数字化，处理和存储和/或显示。

公开(公告)号：US06924657B2

公开(公告)日：2005-08-02

申请号：US10402672

申请日：2003-03-28

申请人： Emil Kamieniecki ,  Jerzy Ruzyllo

发明人： Emil Kamieniecki ,  Jerzy Ruzyllo

IPC分类号： G01R31/26 ,  G01R31/265 ,  G01R31/28 ,  H01L21/66

CPC分类号： H01L22/14 ,  G01R31/2648 ,  G01R31/2656 ,  G01R31/2831 ,  H01L22/10 ,  H01L2924/0002 ,  H01L2924/00

摘要： An apparatus and method for the real-time, in-line testing of semiconductor wafers during the manufacturing process. In one embodiment the apparatus includes a probe assembly within a semiconductor wafer processing line. As each wafer passes adjacent the probe assembly, a source of modulated light, within the probe assembly, having a predetermined wavelength and frequency of modulation, impinges upon the wafer. A sensor in the probe assembly measures the surface photovoltage induced by the modulated light. A computer then uses the induced surface photovoltage to determine various electrical characteristics of the wafer.

公开(公告)号：US06388455B1

公开(公告)日：2002-05-14

申请号：US09483138

申请日：2000-01-13

申请人： Emil Kamieniecki ,  Krzysztof E. Kamieniecki ,  Jeffrey L. Sauer ,  Janusz Butkiewicz

发明人： Emil Kamieniecki ,  Krzysztof E. Kamieniecki ,  Jeffrey L. Sauer ,  Janusz Butkiewicz

IPC分类号： G01R31302

CPC分类号： G01R31/2656 ,  G01R31/308

摘要： This invention relates to a method and apparatus for simulating a surface photo-voltage, more particularly with a photodiode on a process sized disk for calibrating surface photo-voltage measurement devices. The device for simulating a surface photo-voltage includes the photodiode, the disk, a resistor, and may further include an operational amplifier. The apparatus for simulating a surface photo-voltage of the current invention facilitates calibration of surface photo-voltage measurement devices by using a process sized disk to fit directly on a surface photo-voltage measurement chuck.

摘要翻译： 本发明涉及用于模拟表面光电压的方法和装置，更具体地说，涉及用于校准表面光电压测量装置的工艺尺寸盘上的光电二极管。 用于模拟表面光电压的装置包括光电二极管，盘，电阻器，还可以包括运算放大器。 用于模拟本发明的表面光电压的装置有助于通过使用工艺尺寸的盘直接配合在表面光电压测量卡盘上来校准表面光电压测量装置。