-
公开(公告)号：US06641746B2
公开(公告)日：2003-11-04
申请号：US09967435
申请日：2001-09-28
IPC分类号： H01L2100
CPC分类号： H01J37/32935 , G05B2219/32335 , G05B2219/45031 , H01J37/3299
摘要： An integrated metrology and lithography/etch system and method (10) for micro-electronics device manufacturing. A process control neural network (30) is used to develop an estimated process control parameter (32) for controlling an etching process (28). The process control neural network is responsive to a multi-parameter characterization of a patterned resist feature MPC(PR) (16) developed on a substrate. The process control parameter is used as a feed-forward control for the etching process to develop an actual final mask feature. A multi-parameter characterization of the actual final mask feature MPC(HM) (36) is used as an input to a training neural network (40) for mapping to an ideal process control parameter. The ideal process control parameter is compared to the estimated control parameter to develop an error parameter (46), which is then used to train the process control neural network.
摘要翻译： 用于微电子器件制造的综合测量和光刻/蚀刻系统和方法（10）。 过程控制神经网络（30）用于开发用于控制蚀刻过程（28）的估计过程控制参数（32）。 过程控制神经网络响应于在衬底上显影的图案化抗蚀剂特征MPC（PR）（16）的多参数表征。 过程控制参数用作蚀刻过程的前馈控制以开发实际的最终掩模特征。 使用实际最终掩模特征MPC（HM）（36）的多参数表征作为训练神经网络（40）的输入，用于映射到理想的过程控制参数。 将理想的过程控制参数与估计的控制参数进行比较，以开发误差参数（46），然后将其用于训练过程控制神经网络。
-
公开(公告)号：US06651226B2
公开(公告)日：2003-11-18
申请号：US09967114
申请日：2001-09-28
IPC分类号： G06F1750
CPC分类号： G03F7/70491 , G03F7/70625
摘要： In-line process control for 120 nm and 100 nm lithography using the installed scanning electron microscope (SEM) equipment base. A virtual three-dimensional representation of a photoresist feature is developed by applying a transform function to SEM intensity data representing the feature. The transform function correlates highly accurate height vector data, such as provided by a stylus nanoprofilometer or scatterometer, with the highly precise intensity data from the SEM. A multiple parameter characterization of at least one critical dimension of the virtual feature is compared to an acceptance pattern template, with the results being used to control a downstream etch process or an upstream lithography process. A multiple parameter characteristic of a three dimensional representation of the resulting post-etch final feature may be compared to device performance data to further refine the acceptance pattern template.
-
13.发明授权公开(公告)号：US06899596B2
公开(公告)日：2005-05-31
申请号：US10121370
申请日：2002-04-12
申请人： Michael Antonell , Jennifer A. Antonell , Erik Cho Houge , Ryan Keith Maynard , Darrell L. Simpson
发明人： Michael Antonell , Jennifer A. Antonell , Erik Cho Houge , Ryan Keith Maynard , Darrell L. Simpson
IPC分类号： B24B37/04 , C09G1/02 , C09K3/14 , C09K13/00 , H01L21/304 , H01L21/306 , B24B1/00
CPC分类号： C09G1/02 , B24B37/044
摘要： A chemical mechanical polishing (CMP) process using a chemically active slurry having a polarity selected to affect the relative oxidation rates of respective crystalline planes of a polycrystalline surface being polished. The slurry polarity is controlled to equilibrate the material removal rates from the respective crystalline planes during the CMP process. A polar solute may be added to a base solvent to achieve the desired polarity. A CMP process for a tungsten film may utilize a water-based slurry containing an abrasive agent, an oxidizing agent, and a solute having a polarity less than that of water. The abrasive agent may be colloidal silica, the oxidizing agent may be hydrogen peroxide, and the solute may be benzene.
摘要翻译： 使用具有极性的化学活性浆料的化学机械抛光（CMP）方法，其选择为影响被抛光的多晶表面的各个晶面的相对氧化速率。 控制浆料极性以在CMP过程期间平衡来自相应结晶平面的材料去除速率。 可以将极性溶质加入到碱性溶剂中以获得所需的极性。 用于钨膜的CMP方法可以使用含有研磨剂，氧化剂和极性小于水的极性溶质的水基浆料。 研磨剂可以是胶体二氧化硅，氧化剂可以是过氧化氢，溶质可以是苯。
-
公开(公告)号：US06825467B2
公开(公告)日：2004-11-30
申请号：US10180221
申请日：2002-06-25
IPC分类号： G01N23203
CPC分类号： G01N23/20
摘要： The present invention provides and apparatus and method for scanning a crystalline sample comprising a sample holder, an electron source for generating an electron beam and a scanning actuator for controlling the relative movement between the electron beam and the crystalline sample. In addition, an image processor is provided for processing images from electrons from the crystalline sample and a controller for controlling the scanning actuator to space points on the crystalline sample, at which the electron beam is directed. The points are preferably spaced apart a distance that is at least as large as a known grain size of the crystalline sample. The controller determines a grain orientation with respect to each point within a series of points within a scan area of the crystalline sample. The controller determines an average grain orientation for the crystalline sample for current image and a previously processed image. The controller monitors a variance in the average deviation and terminates the scanning when the variance in the average grain orientation approaches a predetermined value.
摘要翻译： 本发明提供了用于扫描包括样品架，用于产生电子束的电子源和用于控制电子束和结晶样品之间的相对运动的扫描致动器的结晶样品的装置和方法。 此外，提供了一种用于处理来自结晶样品的电子的图像的图像处理器和用于控制扫描致动器以在电子束被引导的结晶样品上的空间点的控制器。 这些点优选间隔开至少与已知晶体尺寸的结晶样品一样大的距离。 控制器确定相对于晶体样品的扫描区域内的一系列点内的每个点的晶粒取向。 控制器确定当前图像和先前处理的图像的晶体样本的平均晶粒取向。 控制器监视平均偏差的变化，并且当平均晶粒取向的变化接近预定值时终止扫描。
-
15.发明授权Method and apparatus for detection of chemical mechanical planarization endpoint and device planarity 有权用于检测化学机械平面化终点和器件平面度的方法和装置公开(公告)号：US06783426B2
公开(公告)日：2004-08-31
申请号：US10120767
申请日：2002-04-10
IPC分类号： B24B4900
CPC分类号： B24B37/013 , B24B49/10
摘要： The present invention for a method and apparatus for detection of chemical mechanical planarization endpoint and device planarity comprises imparting at least one variation of an atomic mass of at least one material within the layer. The variation of the atomic mass within the layer is indicative of the layer thickness. The removal of the layer is monitored by detecting the variation in the atomic mass, and/or a change in concentration of the at least one material, during removal of the layer. Once the concentration of the material reaches a minimum threshold, or an atomic mass is detected at a minimum intensity, within a predetermined time duration, the removal of the layer is terminated. The variation in atomic mass, and/or concentration of materials within the layer is used to measure a planarity of the device.
摘要翻译： 用于检测化学机械平面化终点和器件平面性的方法和装置的本发明包括赋予层内至少一种材料的原子质量的至少一种变化。 层内的原子质量的变化表示层厚度。 通过在去除层期间检测原子质量的变化和/或至少一种材料的浓度变化来监测层的去除。 一旦材料的浓度达到最小阈值，或者在预定的持续时间内以最小强度检测到原子质量，则该层的去除被终止。 原子质量的变化和/或层内材料的浓度用于测量器件的平面度。
-
公开(公告)号：US06625250B2
公开(公告)日：2003-09-23
申请号：US09742855
申请日：2000-12-19
申请人： Erik Cho Houge
发明人： Erik Cho Houge
IPC分类号： G21K106
CPC分类号： G21K1/06 , G21K2201/062 , G21K2201/064 , G21K2201/067
摘要： A reflective lens with at least one curved surface formed of polycrystalline material. In an example embodiment a lens structure includes a substrate having a surface of predetermined curvature and a film formed along a surface of the substrate with multiple individual members each having at least one similar orientation relative to the portion of the substrate surface adjacent the member such that collectively the members provide predictable angles for diffraction of x-rays generated from a common source. A system is also provided for performing an operation with x-rays. In one form of the invention the system includes a source for generating the x-rays and a polycrystalline surface region having crystal spacings suitable for reflecting a plurality of x-rays at the same Bragg angle along the region and transmitting the reflected x-rays to a reference position. An associated method includes providing x-rays to a polycrystalline surface region having crystal spacings suitable for reflecting a plurality of x-rays at the same Bragg angle along the region, transmitting the reflected x-rays to a reference position; and positioning a sample between the surface region and the reference position so that x-rays are transmitted through the sample.
摘要翻译： 具有由多晶材料形成的至少一个曲面的反射透镜。 在示例实施例中，透镜结构包括具有预定曲率的表面的基板和沿着基板的表面形成的膜，多个单独的构件各自相对于邻近构件的基板表面的部分具有至少一个相似的取向，使得 这些构件共同地为从公共源产生的x射线的衍射提供可预测的角度。还提供用于执行具有x射线的操作的系统。 在本发明的一种形式中，该系统包括用于产生x射线的源和具有晶体间距的多晶表面区域，该多晶表面区域适于沿着该区域以相同的布拉格角反射多个x射线并将反射的x射线传输到 参考位置。 相关联的方法包括向具有晶体间距的多晶表面区域提供x射线，该晶体间距适于沿着该区域以相同的布拉格角反射多个x射线，将反射的x射线透射到参考位置; 并将样品定位在表面区域和参考位置之间，使得x射线透过样品。
-
-
-
-
-
搜索结果
16 条记录 (耗时 0.022 秒)
