摘要:
A system and method for detecting process endpoint in CMP is presented which monitors the progression of chemical activities that take place from the chemical reaction that occurs at the wafer surface during polishing. In order to monitor the progression of chemical activities taking place from the chemical reaction, a surface plasmon resonance sensor acts as a conducting surface which supports surface plasmon resonance.
摘要:
Arrayed imaging systems include an array of detectors formed with a common base and a first array of layered optical elements, each one of the layered optical elements being optically connected with a detector in the array of detectors.
摘要:
A multilayer optical device includes an arrangement, on a substrate, of a first layer, a second layer, and a space therebetween. The second layer is a thin-film. The arrangement of the first and second layers and the space therebetween produces transmitted, reflected, or dispersed spectrally modified electromagnetic energy from electromagnetic energy incident upon the arrangement. An optical function of the device is dependent at least in part on interference effects. An optical detector system includes a similar multilayer optical device. The space within the device is in fluid communication with structures for receiving a fluid such that the device operates in a first or second mode depending on absence or presence of the fluid within the space. The system includes a detector for receiving the modified electromagnetic energy, and a controller in fluid communication with the space that establishes the absence or presence of the fluid in the space.
摘要:
Method and apparatus for in-situ measurement of workpiece displacement during chemical mechanical polishing are disclosed. The chemical mechanical polishing apparatus includes a platen having a polishing material attached thereto and a distance measurement device attached to the platen. The distance measurement device includes a light source and a light sensor. Distance between the device and the workpiece is measured by transmitting light through apertures formed within the platen and the polishing material toward the workpiece and focusing the light reflected from the workpiece on an element within the sensor.