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    ORGANIC FILM TRANSISTOR, ORGANIC SEMICONDUCTOR FILM, AND ORGANIC SEMICONDUCTOR MATERIAL AND USE APPLICATIONS THEREOF
    14.
    发明申请
    ORGANIC FILM TRANSISTOR, ORGANIC SEMICONDUCTOR FILM, AND ORGANIC SEMICONDUCTOR MATERIAL AND USE APPLICATIONS THEREOF 有权
    有机薄膜晶体管，有机半导体薄膜及其有机半导体材料及其应用

    公开(公告)号：US20160126460A1

    公开(公告)日：2016-05-05

    申请号：US14993403

    申请日：2016-01-12

    Applicant: FUJIFILM Corporation

    Inventor： Akihiro KANEKO ,  Koji TAKAKU ,  Yasunori YONEKUTA ,  Yuki HIRAI ,  Hiroki SUGIURA ,  Masashi KOYANAGI ,  Kensuke MASUI

    IPC: H01L51/00 ,  C08G61/12

    CPC classification number: H01L51/0036 ,  C08G61/126 ,  C08G2261/1412 ,  C08G2261/1424 ,  C08G2261/18 ,  C08G2261/314 ,  C08G2261/3223 ,  C08G2261/3243 ,  C08G2261/344 ,  C08G2261/414 ,  C08G2261/92 ,  C08L65/00 ,  H01L51/0003 ,  H01L51/0043 ,  H01L51/0545 ,  H01L51/0558

    Abstract: An organic film transistor containing a compound, which is composed of n repeating units represented by Formula (1-1), (1-2), (101-1), or (101-2), in a semiconductor active layer is an organic film transistor using a compound having high carrier mobility and high solubility in an organic solvent. (Cy represents a benzene ring, a naphthalene ring, or an anthracene ring; each of R11 to R14 and R15 to R18 independently represents a hydrogen atom or a substituent; each of Ar1 to Ar4 independently represents a heteroarylene group or an arylene group; each of V1 and V2 represents a divalent linking group; m represents an integer of 0 to 6; when m is equal to or greater than 2, two or more groups represented by V1 may be the same as or different from each other; n is equal to or greater than 2; p represents an integer of 0 to 6; and when p is equal to or greater than 2, two or more groups represented by V2 may be the same as or different from each other.)

    Abstract translation: 在半导体活性层中含有由式（1-1），（1-2），（101-1）或（101-2）表示的n个重复单元构成的化合物的有机薄膜晶体管是 有机薄膜晶体管，其使用在有机溶剂中具有高载流子迁移率和高溶解度的化合物。 （Cy表示苯环，萘环或蒽环，R 11〜R 14，R 15〜R 18各自独立地表示氢原子或取代基，Ar 1〜Ar 4各自独立地表示亚亚芳基或亚芳基） 的V1和V2表示二价连接基团; m表示0〜6的整数;当m为2以上时，由V1表示的2个以上的基团可以相同或不同; n相同 2以上; p表示0〜6的整数，p为2以上时，由V2表示的2个以上的基团可以相同或不同。

    THERMOELECTRIC CONVERSION MODULE
    18.
    发明申请
    THERMOELECTRIC CONVERSION MODULE 审中-公开

    公开(公告)号：US20200052180A1

    公开(公告)日：2020-02-13

    申请号：US16657892

    申请日：2019-10-18

    Applicant: FUJIFILM Corporation

    Inventor： Naoyuki HAYASHI ,  Hiroki SUGIURA

    IPC: H01L35/32 ,  H01L35/34

    Abstract: A thermoelectric conversion module has a long support, a plurality of first metal layers formed on one surface of the support at intervals in a longitudinal direction of the support, a plurality of thermoelectric conversion layers formed at intervals in the longitudinal direction of the support, and a connection electrode for connecting the thermoelectric conversion layers adjacent in the longitudinal direction of the support, and a second metal layer formed on the other surface of the support, in which the first and the second metal layers have low rigidity portions that have rigidity lower than rigidity of other regions and extend in a width direction of the support, the low rigidity portions of the first and the second metal layers are formed at the same positions in the longitudinal direction, and the support is alternately bent into a mountain fold and a valley fold at the low rigidity portions.

    THERMOELECTRIC CONVERSION ELEMENT, METHOD FOR MANUFACTURING THERMOELECTRIC CONVERSION ELEMENT, THERMOELECTRIC CONVERSION MODULE, AND METHOD FOR MANUFACTURING THERMOELECTRIC CONVERSION MODULE
    20.
    发明申请
    THERMOELECTRIC CONVERSION ELEMENT, METHOD FOR MANUFACTURING THERMOELECTRIC CONVERSION ELEMENT, THERMOELECTRIC CONVERSION MODULE, AND METHOD FOR MANUFACTURING THERMOELECTRIC CONVERSION MODULE 审中-公开

    公开(公告)号：US20190006570A1

    公开(公告)日：2019-01-03

    申请号：US16124289

    申请日：2018-09-07

    Applicant: FUJIFILM Corporation

    Inventor： Hiroki SUGIURA ,  Yoshinori KANAZAWA ,  Naoyuki HAYASHI ,  Kimiatsu NOMURA

    IPC: H01L35/08 ,  H01L35/24 ,  H01L35/32 ,  H01L35/34 ,  H01L51/00

    Abstract: An object of the present invention is to provide a thermoelectric conversion element having excellent thermoelectric conversion performance and excellent high-temperature durability, a method for manufacturing the thermoelectric conversion element, a thermoelectric conversion module, and a method for manufacturing the thermoelectric conversion module. A thermoelectric conversion element of the present invention has a thermoelectric conversion layer containing an organic thermoelectric conversion material and a dopant, a pair of electrodes disposed at positions separated from each other, and a buffer layer which is disposed between the thermoelectric conversion layer and each of the electrodes and electrically connects the thermoelectric conversion layer and the electrodes to each other, in which the buffer layer contains the same material as the organic thermoelectric conversion material contained in the thermoelectric conversion layer, the buffer layer does not contain a dopant or contains a dopant, and in a case where the buffer layer contains a dopant, a ratio of the dopant contained in the buffer layer to the dopant contained in the thermoelectric conversion layer is equal to or lower than 0.1.

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