Abstract:
The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition which is excellent in LER performance and a collapse suppressing ability. Furthermore, the present invention provides a resist film, a pattern forming method, and a method for manufacturing an electronic device. The actinic ray-sensitive or radiation-sensitive resin composition of an embodiment of the present invention includes a resin having a polarity that increases by the action of an acid; and a compound that generates an acid upon irradiation with actinic rays or radiation, in which the resin has a repeating unit represented by General Formula (B-1).
Abstract:
There is provided an organic non-linear optical material containing a compound represented by the Formula (I), and the Formula (I) is defined as herein, and a polymer binder: and an optical element comprising the organic non-linear optical material, and an optical modulator comprising the organic non-linear optical material, and a compound represented by the Formula (I) and the formula (I) is defined as herein.
Abstract:
There is provided an organic nonlinear optical material including a polymer binder and a compound represented by the following Formula (I): wherein, in Formula (I), R1 and R2 each independently represent a substituted or unsubstituted alkyl group or a substituted or unsubstituted aryl group; R3 represents a hydrogen atom, a substituted or unsubstituted alkyl group, or a substituted or unsubstituted aryl group; and L represents a divalent linking group connecting a nitrogen atom and an oxopyrroline ring having a dicyanomethylidene group in a π-conjugated system containing an azo group (—N═N—).
Abstract:
An object of the present invention is to provide an actinic ray-sensitive or radiation-sensitive resin composition having an excellent resolution. In addition, another object of the present invention is to provide a resist film, a pattern forming method, and a method for manufacturing an electronic device, each relating to the actinic ray-sensitive or radiation-sensitive resin composition. The actinic ray-sensitive or radiation-sensitive resin composition of the embodiment of the present invention includes:
a resin of which polarity increases through decomposition by the action of an acid; and a compound that generates an acid upon irradiation with actinic rays or radiation, in which the resin includes a resin including a repeating unit X1 having two or more groups of which polarity increases through decomposition by the action of an acid and a repeating unit X2 having a phenolic hydroxyl group.
Abstract:
A photosensitive composition for EUV light includes a predetermined resin and a photoacid generator, or includes a predetermined resin having a repeating unit having a photoacid generating group, and satisfies Conditions 1 and 2, Condition 1: The A value determined by Formula (1) is 0.14 or more, A=([H]×0.04+[C]×1.0+[N]×2.1+[O]×3.6+[F]×5.6+[S]×1.5+[I]×39.5)/([H]×1+[C]×12+[N]×14+[O]×16+[F]×19+[S]×32+[I]×127) Formula (1): Condition 2: The concentration of the solid content in the photosensitive composition for EUV light is 2.5% by mass or less.
Abstract:
By a method for producing a resin, a resin containing a repeating unit represented by General Formula (1) and a repeating unit containing a group that decomposes by the action of an acid to generate a polar group is produced, and the method includes a first step of obtaining a resin precursor containing a repeating unit represented by General Formula (2) and the repeating unit containing a group that decomposes by the action of an acid to generate a polar group, and a second step of obtaining the repeating unit represented by General Formula (1) by deprotecting a group represented by —OY in the repeating unit represented by General Formula (2) in the resin precursor with an acid or a base.
Abstract:
An organic film transistor containing a compound, which is composed of n repeating units represented by Formula (1-1), (1-2), (101-1), or (101-2), in a semiconductor active layer is an organic film transistor using a compound having high carrier mobility and high solubility in an organic solvent. (Cy represents a benzene ring, a naphthalene ring, or an anthracene ring; each of R11 to R14 and R15 to R18 independently represents a hydrogen atom or a substituent; each of Ar1 to Ar4 independently represents a heteroarylene group or an arylene group; each of V1 and V2 represents a divalent linking group; m represents an integer of 0 to 6; when m is equal to or greater than 2, two or more groups represented by V1 may be the same as or different from each other; n is equal to or greater than 2; p represents an integer of 0 to 6; and when p is equal to or greater than 2, two or more groups represented by V2 may be the same as or different from each other.)
Abstract:
An actinic ray-sensitive or radiation-sensitive resin composition including: a compound (N) having an anion and a cation represented by a formula (N1) below, and a resin (A) that is decomposed by an action of an acid to provide increased polarity,
wherein, in the formula (N1), RN1, RN2, and RN3 each independently represent a specified group, k1 to k6 each independently represents a specified integer, a plurality of RN1's may be the same or different, RN4, RN5, and RN6 each independently represent a specified substituent, and at least two among the aromatic rings in the formula (N1) may be bonded together via a single bond or a linking group.
Abstract:
There is provided a resist composition containing a resin. The resin includes a repeating unit (a) having one or more *—OY0 groups substituted for an aromatic ring; and a phenolic hydroxyl group (b) or a partial structure (c) represented by Formula (X). Here, the *—OY0 group is a group that is decomposed due to an action of an acid to generate a phenolic hydroxyl group, and Y0 is a specific protective group. In a case where the repeating unit (a) includes none of the phenolic hydroxyl group (b) and the partial structure (c), the repeating unit (a) is a repeating unit in which the *—OY0 group is decomposed due to an action of an acid to generate two or more phenolic hydroxyl groups.
Abstract:
Provided are an organic transistor which contains a compound having a repeating unit represented by any of the following formulae in a semiconductor active layer and has high carrier mobility; a compound; an organic semiconductor material for a non-light-emitting organic semiconductor device; an organic semiconductor material; a coating solution for a non-light-emitting organic semiconductor device; and an organic semiconductor film for a non-light-emitting organic semiconductor device (W represents an oxygen atom, a sulfur atom, NR1, or C(R2)2; R1 represents a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group; R2 represents a cyano group, an acyl group, a (per)fluoroalkyl group, or a (per)fluoroaryl group; cy represents an aromatic ring or a heterocyclic aromatic ring that may have a substituent; and each of R3 and R4 represents a hydrogen atom or a monovalent substituent).