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公开(公告)号:US20210055653A1
公开(公告)日:2021-02-25
申请号:US16807496
申请日:2020-03-03
Applicant: FUJIFILM Corporation
Inventor: Tsutomu YOSHIMURA , Yasunori YONEKUTA , Naoya HATAKEYAMA , Kohei HIGASHI , Yoichi NISHIDA
IPC: G03F7/039 , G03F7/004 , G03F7/038 , C08F212/14 , C08F220/18 , C08F212/08
Abstract: Provided are an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (A), in which the resin (A) includes a repeating unit having an acidic group and a repeating unit having an acid-decomposable group, a content of the repeating unit having an acidic group is 15% by mole or more with respect to all the repeating units in the resin (A), a content of the repeating unit having an acid-decomposable group is more than 20% by mole with respect to all the repeating units in the resin (A), a glass transition temperature of the resin (A) is 145° C. or lower, and the actinic ray-sensitive or radiation-sensitive resin composition is used for formation of a film having a film thickness of 2 μm or more; and a resist film, a pattern forming method, and a method for manufacturing an electronic device, each using the actinic ray-sensitive or radiation-sensitive resin composition.
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公开(公告)号:US20200019058A1
公开(公告)日:2020-01-16
申请号:US16579014
申请日:2019-09-23
Applicant: FUJIFILM Corporation
Inventor: Naoya HATAKEYAMA , Yasunori YONEKUTA , Tsutomu YOSHIMURA , Kohei HIGASHI , Yoichi NISHIDA
IPC: G03F7/039 , G03F7/038 , G03F7/004 , C08F212/14 , C08F220/68 , C08F212/32
Abstract: An actinic ray-sensitive or radiation-sensitive resin composition includes: a resin, in which the actinic ray-sensitive or radiation-sensitive resin composition has a concentration of a solid content of 10% by mass or more, and in which the resin includes: a repeating unit A which is a repeating unit derived from a monomer allowing a homopolymer formed therefrom to have a glass transition temperature of 50° C. or lower, and a repeating unit B which is a repeating unit having an acid-decomposable group, a content of the repeating unit B is 20% by mole or less with respect to all the repeating units in the resin, and at least one of the repeating unit contained in the resin is a repeating unit having an aromatic ring.
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公开(公告)号:US20220206386A1
公开(公告)日:2022-06-30
申请号:US17691119
申请日:2022-03-10
Applicant: FUJIFILM Corporation
Inventor: Taro MIYOSHI , Yasunori YONEKUTA , Eiji FUKUZAKI , Toshiya TAKAHASHI
Abstract: An actinic ray-sensitive or radiation-sensitive resin composition containing (A) an acid-decomposable resin, (B) a compound represented by General Formula (b1), and (C) a compound represented by General Formula (c1), in which a ratio of a content of the compound (C) to a content of the compound (B) is from 0.01% by mass to 10% by mass. In the formulae, L represents a single bond or a divalent linking group. A represents a group that decomposes by the action of an acid. B represents a group that decomposes by the action of an acid, a hydroxy group, or a carboxy group. It should be noted that at least one B represents the hydroxy group or the carboxy group. n represents an integer from 1 to 5. X represents an (n+1)-valent linking group. M+ represents a sulfonium ion or an iodonium ion.
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公开(公告)号:US20160049592A1
公开(公告)日:2016-02-18
申请号:US14865649
申请日:2015-09-25
Applicant: FUJIFILM CORPORATION
Inventor: Yasunori YONEKUTA , Koji TAKAKU , Wataru SOTOYAMA
IPC: H01L51/00 , C07F7/08 , C07D517/06 , C07F7/18 , C07D513/06 , C07D498/06
CPC classification number: H01L51/0071 , C07D498/06 , C07D513/06 , C07D517/06 , C07F7/0812 , C07F7/0838 , C07F7/1804 , H01L51/0058 , H01L51/0065 , H01L51/0068 , H01L51/0094 , H01L51/0545
Abstract: An organic thin film transistor containing a compound represented by the formula (1) in a semiconductor active layer has a high carrier mobility, a small change in the threshold voltage after repeated driving and a high solubility in an organic solvent. A1 and A2 represent S, O or Se; at least one of R1 to R6 represents a substituent represented by *-L-R wherein L represents a divalent linking group and R represents a hydrogen atom, an alkyl group, an oligooxyethylene group, an oligosiloxane group or a trialkylsilyl group.
Abstract translation: 在半导体活性层中含有式(1)表示的化合物的有机薄膜晶体管具有高的载流子迁移率,反复驱动后的阈值电压的小变化和在有机溶剂中的高溶解度。 A1和A2代表S,O或Se; R 1〜R 6中的至少一个表示由* -L-R表示的取代基,其中L表示二价连接基团,R表示氢原子,烷基,低聚氧乙烯基,低聚硅氧烷基或三烷基甲硅烷基。
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公开(公告)号:US20230143982A1
公开(公告)日:2023-05-11
申请号:US18069969
申请日:2022-12-21
Applicant: FUJIFILM Corporation
Inventor: Hiroki SUGIURA , Yasunori YONEKUTA
CPC classification number: H10K85/113 , H10K71/60 , H10K10/488 , H10K39/32 , H10K2102/101
Abstract: A first object of the present invention is to provide a photoelectric conversion element having a high external quantum efficiency and small variation in response. A second object of the present invention is to provide an imaging element, an optical sensor, and a compound related to the photoelectric conversion element.
The photoelectric conversion element includes, in the following order, a conductive film, a photoelectric conversion film, and a transparent conductive film, in which the photoelectric conversion film contains a compound represented by Formula (1).-
公开(公告)号:US20190011835A1
公开(公告)日:2019-01-10
申请号:US16131167
申请日:2018-09-14
Applicant: FUJIFILM Corporation
Inventor: Yasunori YONEKUTA
IPC: G03F7/11 , C09D133/08 , G03F7/20 , G03F7/16 , C09D133/16 , C09D125/18 , C09D125/14 , G03F7/38 , G03F7/32
Abstract: The present invention provides a protective film forming composition capable of forming a pattern having excellent depth of focus and exposure latitude even after being stored for a predetermined period of time.The protective film forming composition of the present invention contains a resin, a basic compound, a solvent, and an antioxidant.
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公开(公告)号:US20160372663A1
公开(公告)日:2016-12-22
申请号:US15252937
申请日:2016-08-31
Applicant: FUJIFILM Corporation
Inventor: Hiroo TAKIZAWA , Teruki NIORI , Yasunori YONEKUTA , Hayato YOSHIDA
IPC: H01L51/00
CPC classification number: H01L51/004 , C07F7/081 , C07F7/0812 , H01L51/0003 , H01L51/0043 , H01L51/0055 , H01L51/0071 , H01L51/0073 , H01L51/0074 , H01L51/0094 , H01L51/0516 , H01L51/0558 , H01L51/0562 , H01L51/0566
Abstract: Provided are an organic thin-film transistor including: a gate electrode, an organic semiconductor layer, a gate insulating layer, and a source electrode and a drain electrode on a substrate, in which the organic semiconductor layer contains an organic semiconductor and a block copolymer, and the block copolymer is at least one selected from specific block copolymers such as a styrene-(meth)acrylate ester block copolymer and may be phase-separated, and a method for manufacturing an organic thin-film transistor, which includes an organic semiconductor containing a phase-separated block copolymer, including: applying a coating solution which contains an organic semiconductor and a block copolymer for film formation; and heating the obtained film so that the block copolymer is self-assembled.
Abstract translation: 提供一种有机薄膜晶体管,其包括:在基板上包括栅极,有机半导体层,栅极绝缘层以及源电极和漏电极,其中有机半导体层包含有机半导体和嵌段共聚物 ,嵌段共聚物为选自特定的嵌段共聚物如苯乙烯 - (甲基)丙烯酸酯嵌段共聚物中的至少一种,可以进行相分离,以及有机薄膜晶体管的制造方法,其包括有机半导体 含有相分离的嵌段共聚物,包括:涂布含有有机半导体的涂料溶液和用于成膜的嵌段共聚物; 加热得到的膜,使嵌段共聚物自组装。
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公开(公告)号:US20240114781A1
公开(公告)日:2024-04-04
申请号:US18307789
申请日:2023-04-26
Applicant: FUJIFILM Corporation
Inventor: Masaki MORITA , Ryo FUJIWARA , Hiroki SUGIURA , Yasunori YONEKUTA , Hiyoku NAKATA
IPC: H10K85/60 , C07D495/04 , C07D519/00 , H10K30/20
CPC classification number: H10K85/657 , C07D495/04 , C07D519/00 , H10K30/20 , H10K85/6572 , H10K85/6576
Abstract: The present invention is to provide a photoelectric conversion element with an excellent photoelectric conversion efficiency, an imaging element, an optical sensor, and a compound. The photoelectric conversion element of the present invention includes, in the following order, a conductive film, a photoelectric conversion film, and a transparent conductive film, in which the photoelectric conversion film contains a compound represented by Formula (1).
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公开(公告)号:US20230132579A1
公开(公告)日:2023-05-04
申请号:US18059397
申请日:2022-11-28
Applicant: FUJIFILM Corporation
Inventor: Yukio TANI , Hiroki SUGIURA , Yasunori YONEKUTA
Abstract: The present invention is to provide a photoelectric conversion element with an excellent sensitivity, an imaging element, an optical sensor, and a compound. The photoelectric conversion element of the present invention includes, in the following order, a conductive film, a photoelectric conversion film, and a transparent conductive film in which the photoelectric conversion film contains a compound represented by Formula (1) and a coloring agent.
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公开(公告)号:US20220137512A1
公开(公告)日:2022-05-05
申请号:US17578473
申请日:2022-01-19
Applicant: FUJIFILM Corporation
Inventor: Naoya HATAKEYAMA , Yasunori YONEKUTA , Takamitsu TOMIGA , Kohei HIGASHI , Fumihiro YOSHINO
Abstract: The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition containing (A) a resin having a polarity that increases by an action of an acid, (B) a photoacid generator, and an anion (P) which is one or more anions selected from the group consisting of NO3−, SO42−, Cl−, and Br−, in which a content of the anion (P) is from 0.01 ppb to 100 ppm with respect to a total mass of the actinic ray-sensitive or radiation-sensitive resin composition, an actinic ray-sensitive or radiation-sensitive film formed from the actinic ray-sensitive or radiation-sensitive resin composition, a pattern forming method, and a method for manufacturing an electronic device.
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