Abstract:
A lens unit is provided that includes: a first lens that is housed inside a lens-barrel, the first lens including a first lens section and a first flange section that juts out from the first lens section in a direction orthogonal to an optical axis direction; a second lens that is housed inside the lens-barrel further toward an imaging plane side than the first lens, the second lens including a second lens section and a second flange section that juts out from the second lens section in a direction orthogonal to the optical axis direction; and a spacing ring that is sandwiched between the first lens and the second lens and that defines a spacing between the first lens and the second lens, the spacing ring includes a main body disposed between the first flange section and the second flange section in the optical axis direction, first protrusion portions that protrude in the optical axis direction from an object side of the main body, and second protrusion portions that protrude in the optical axis direction from the imaging plane side of the main body and are disposed offset with respect to the first protrusion portions when projected along the optical axis direction.
Abstract:
An object is to provide an organic semiconductor element having excellent carrier mobility and heat resistance of a semiconductor active layer, an organic semiconductor composition for obtaining this element, an organic semiconductor film, and a method of manufacturing an organic semiconductor element in which the composition is used, and another object is to provide a compound and an oligomer or a polymer that are suitably used in the organic semiconductor element, the organic semiconductor composition, the organic semiconductor film, and the method of manufacturing an organic semiconductor element.The organic semiconductor element of the present invention includes a compound represented by Formula 1 below in a semiconductor active layer. In Formula 1, X represents a chalcogen atom, p and q each independently represent an integer of 0 to 2, and R1 and R2 each independently represent a halogen atom or a group represented by Formula W below.
Abstract:
Provided are an organic transistor containing a compound represented by the following formula, results in high carrier mobility when being used in a semiconductor active layer of the organic transistor, and exhibits high solubility in an organic solvent, in a semiconductor active layer. X is O, S, or Se; p and q are 0 to 2; R1 to R10, Ra, and Rb are hydrogen, halogen, or -L-R; one of R1 to R10, Ra, and Rb is -L-R; L is a specific divalent linking group; and R is an alkyl group, a cyano group, etc.
Abstract:
An organic film transistor containing a compound, which is composed of n repeating units represented by Formula (1-1), (1-2), (101-1), or (101-2), in a semiconductor active layer is an organic film transistor using a compound having high carrier mobility and high solubility in an organic solvent. (Cy represents a benzene ring, a naphthalene ring, or an anthracene ring; each of R11 to R14 and R15 to R18 independently represents a hydrogen atom or a substituent; each of Ar1 to Ar4 independently represents a heteroarylene group or an arylene group; each of V1 and V2 represents a divalent linking group; m represents an integer of 0 to 6; when m is equal to or greater than 2, two or more groups represented by V1 may be the same as or different from each other; n is equal to or greater than 2; p represents an integer of 0 to 6; and when p is equal to or greater than 2, two or more groups represented by V2 may be the same as or different from each other.)
Abstract:
Provided are an image processing device, an image capturing device, and an image processing method. Included are a video acquisition section that acquires a video with a variable image capturing frame rate during image capturing, an image capturing mode selection section that selects a first video capturing mode or a second video capturing mode in which an exposure time per frame is set to be shorter than that in the first video capturing mode, a compression processing selection section that selects first compression processing that prioritizes a capacity in a case where the first video capturing mode is selected or selects second compression processing that prioritizes image quality in a case where the second video capturing mode is selected, and a compression processing section that compresses the video acquired by the video acquisition section and performs the first compression processing or second compression processing selected by the compression processing selection section.
Abstract:
A lens unit includes: a lens in which first and second circular portions are arranged in an optical axis direction, the first circular portion having a first diameter, the second circular portion having a second diameter larger than the first diameter; a sealing member that is annular when viewed in the optical axis direction and that has an inner peripheral surface that contacts an outer peripheral surface of the first circular portion; and a lens barrel including first and second inner wall portions, the first inner wall portion being circular when viewed in the optical axis direction and pressing the sealing member between the first inner wall portion and the first circular portion, the second inner wall portion having three or more contact portions that contact an outer peripheral surface of the second circular portion and that are arranged with spaces therebetween in a circumferential direction of the lens.
Abstract:
Provided is an ink composition used for image formation by an ink jet method. The ink composition includes plate-like metal particles that include a metal element having a standard oxidation-reduction potential nobler than −1.65 V, that have an average equivalent circle diameter of 10 nm or more and less than 500 nm, and that have an average aspect ratio, which is the ratio of the average equivalent circle diameter to an average thickness, of 3 or more. Also provided are an ink set, an image forming method, and a printed matter.
Abstract:
An object of the present invention is to provide an organic semiconductor composition, which makes it possible to obtain an organic semiconductor film having high mobility and being excellent in film uniformity and heat resistance, and a method for manufacturing an organic semiconductor element.The organic semiconductor composition of the present invention contains an organic semiconductor as Component A and an organic solvent, which is represented by Formula B-1 and has a melting point of equal to or lower than 25° C. and a boiling point of equal to or higher than 150° C. and equal to or lower than 280° C., as Component B, in which an ionization potential of Component A is equal to or higher than 5.1 eV. In the formula, X represents O, S, S═O, O═S═O, or NR, Y1 to Y4 each independently represent NR1 or CR10R11, R, R1, R10, and R11 each independently represent a hydrogen atom or a substituent, and n represents 1 or 2.
Abstract:
Provided are an organic transistor having high carrier mobility that contains a compound represented by the following formula in a semiconductor active layer (each of X1 to X4 represents NR100, an O atom, or a S atom; NR100 represents a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an acyl group, an aryl group, or a heteroaryl group; each of R1 to R6 represents a hydrogen atom or a substituent; at least one of R1, R2, R3, R4, R5, or R6 is a substituent represented by -L-R; L is a divalent linking group having a specific structure; and R is an alkyl group having 5 to 19 carbon atoms); a compound; an organic semiconductor material for a non-light-emitting organic semiconductor device; a material for an organic transistor; a coating solution for a non-light-emitting organic semiconductor device; an organic semiconductor film for a non-light-emitting organic semiconductor device; and a method for manufacturing an organic semiconductor film for a non-light-emitting organic semiconductor device.
Abstract:
Provided are an organic transistor having high carrier mobility that contains a compound represented by the following formula in a semiconductor active layer; a compound; an organic semiconductor material for a non-light-emitting organic semiconductor device; a material for an organic transistor; a coating solution for a non-light-emitting organic semiconductor device; and an organic semiconductor film for a non-light-emitting organic semiconductor device (each of X1 and X2 represents NR13, an O atom, or a S atom; A1 represents CR7 or a N atom; A2 represents CR8 or a N atom; R13 represents a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an acyl group; each of R1 to R8 independently represents a hydrogen atom or a substituent; at least one of R1, R2, R3, R4, R5, R6, R7, or R8 is a substituent represented by -L-R; L represents a divalent linking group having a specific structure; and R represents an alkyl group, a cyano group, a vinyl group, an ethynyl group, an oxyethylene group, an oligo-oxyethylene group in which a repetition number v of an oxyethylene unit is equal to or greater than 2, a siloxane group, an oligosiloxane group having two or more silicon atoms, or a trialkylsilyl group).