公开(公告)号：US10199210B2

公开(公告)日：2019-02-05

申请号：US15152676

申请日：2016-05-12

Applicant: FUJIFILM Corporation

Inventor： Tetsuya Kamimura ,  Yasuo Sugishima ,  Atsushi Mizutani

IPC: C11D7/32 ,  H01L21/02 ,  H01L21/311 ,  G03F7/42 ,  B08B3/04 ,  B08B3/08 ,  B08B3/10 ,  B08B7/00 ,  B08B9/00 ,  C11D7/26 ,  C11D11/00 ,  H01L21/3105 ,  C11D3/00 ,  C11D3/37 ,  H01L21/8238

Abstract: Provided is a semiconductor substrate treatment liquid which removes an organic material on the top of a semiconductor substrate from the semiconductor substrate having a Ge-containing layer that includes germanium (Ge) or cleans the surface thereof, and the treatment liquid includes a liquid chemical component which adjusts the pH of the treatment liquid to be in a range of 5 to 16 and an anticorrosive component which is used to prevent the Ge-containing layer.

公开(公告)号：US09809746B2

公开(公告)日：2017-11-07

申请号：US14956500

申请日：2015-12-02

Applicant: FUJIFILM Corporation

Inventor： Yasuo Sugishima ,  Atsushi Mizutani ,  Keeyoung Park

IPC: C09K13/06 ,  C09K13/08 ,  H01L21/3213

CPC classification number: C09K13/08 ,  H01L21/32134

Abstract: There is provided an etching liquid including nitric acid; a fluorine-containing compound; and a nitrogen-containing organic compound A containing a nitrogen atom, or a phosphorus-containing compound B.