公开(公告)号：US20130299799A1

公开(公告)日：2013-11-14

申请号：US13945122

申请日：2013-07-18

Applicant: FUJIFILM Corporation

Inventor： Katsuyuki YOFU ,  Kimiatsu NOMURA ,  Mitsumasa HAMANO ,  Tetsuro MITSUI

IPC: H01L51/42

CPC classification number: H01L51/42 ,  B82Y10/00 ,  C07D333/36 ,  C07D333/56 ,  C07D333/72 ,  C07D409/04 ,  C07D409/06 ,  C07D409/12 ,  C07D495/04 ,  C07D495/14 ,  C09B3/00 ,  C09B23/105 ,  C09B57/008 ,  H01L27/307 ,  H01L51/0046 ,  H01L51/0053 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0068 ,  H01L51/0072 ,  H01L51/0074 ,  H01L51/4253 ,  Y02E10/549

Abstract: A photoelectric conversion device comprising an electrically conductive film, an organic photoelectric conversion film, and a transparent electrically conductive film, wherein the organic photoelectric conversion film contains a compound represented by the following formula (1) and an n-type organic semiconductor: wherein each of R1 and R2 independently represents a substituted aryl group, an unsubstituted aryl group, a substituted heteroaryl group or an unsubstituted heteroaryl group, each of R3 to R11 independently represents a hydrogen atom or a substituent provided that an acidic group is excluded, m represents 0 or 1, n represents an integer of 0 or more, R1 and R2, R3 and R4, R3 and R5, R5 and R6, R6 and R8, R7 and R8, R7 and R9, or R10 and R11 may be combined each other to form a ring, and when n is an integer of 2 or more, out of a plurality of R7's and R8's, a pair of R7's, a pair of R8's, or a pair of R7 and R8 may be combined each other to form a ring.

Abstract translation: 一种光电转换元件，包括导电膜，有机光电转换膜和透明导电膜，其中有机光电转换膜包含由下式（1）表示的化合物和n型有机半导体：其中每个 R 1和R 2独立地表示取代的芳基，未取代的芳基，取代的杂芳基或未取代的杂芳基，只要不排除酸性基团，则R3至R11各自独立地表示氢原子或取代基，m表示0 或1，n表示0或更大的整数，R 1和R 2，R 3和R 4，R 3和R 5，R 5和R 6，R 6和R 8，R 7和R 8，R 7和R 9或R 10和R 11可以相互组合 形成环，当n为2以上的整数时，在多个R 7和R 8中，可以将一对R 7，一对R 8，或一对R 7和R 8相互组合形成环 。

公开(公告)号：US20130122276A1

公开(公告)日：2013-05-16

申请号：US13733256

申请日：2013-01-03

Applicant: FUJIFILM Corporation

Inventor： Kimiatsu NOMURA ,  Eiji FUKUZAKI ,  Tetsuro MITSUI

IPC: H01L51/00

CPC classification number: H01L51/0072 ,  B82Y10/00 ,  C09B23/04 ,  C09B57/008 ,  C09B57/10 ,  H01L51/0046 ,  H01L51/005 ,  H01L51/0052 ,  H01L51/0059 ,  H01L51/0067 ,  H01L51/0069 ,  H01L51/0071 ,  H01L51/0094 ,  H01L51/4253 ,  Y02E10/549

Abstract: A photoelectric conversion device comprising a transparent electrically conductive film, a photoelectric conversion film and an electrically conductive film in this order, wherein the photoelectric conversion film comprises a photoelectric conversion layer, and an electron blocking layer, wherein the electron blocking layer contains a compound represented by the specific formula.

Abstract translation: 一种光电转换装置，包括透明导电膜，光电转换膜和导电膜，其中光电转换膜包括光电转换层和电子阻挡层，其中电子阻挡层含有表示的化合物 具体公式。

公开(公告)号：US20200035932A1

公开(公告)日：2020-01-30

申请号：US16592785

申请日：2019-10-04

Applicant: FUJIFILM Corporation

Inventor： Tomoaki YOSHIOKA ,  Eiji FUKUZAKI ,  Kimiatsu NOMURA

IPC: H01L51/00 ,  C07D487/22

Abstract: The present invention provides a photoelectric conversion element exhibiting excellent responsiveness, and excellent dark current characteristics in a case of high-speed photoelectric conversion film formation, an optical sensor, an imaging element, and a compound which include the photoelectric conversion element. The photoelectric conversion element of the present invention includes a conductive film, a photoelectric conversion film, and a transparent conductive film, in this order, in which the photoelectric conversion film contains a compound represented by Formula (1), and an n-type organic semiconductor having a predetermined structure.

公开(公告)号：US20200028051A1

公开(公告)日：2020-01-23

申请号：US16243196

申请日：2019-01-09

Applicant: FUJIFILM CORPORATION

Inventor： Hiroki SUGIURA ,  Yoshinori KANAZAWA ,  Kimiatsu NOMURA

IPC: H01L35/24 ,  C01B32/159 ,  C01B32/174 ,  H01L35/28 ,  H01L51/00

Abstract: An object of the present invention is to provide a semiconductor layer (n-type semiconductor layer) which demonstrate an excellent thermoelectric conversion performance and exhibits n-type characteristics. Another object of the present invention is to provide a thermoelectric conversion layer formed of the n-type semiconductor layer and a composition for forming an n-type semiconductor layer. Still another object of the present invention is to provide a thermoelectric conversion element, which has the thermoelectric conversion layer as an n-type thermoelectric conversion layer, and a thermoelectric conversion module.The n-type semiconductor layer of the embodiment of the present invention contains a nanocarbon material and an onium salt represented by a specific structure.

公开(公告)号：US20170194547A1

公开(公告)日：2017-07-06

申请号：US15451073

申请日：2017-03-06

Applicant: FUJIFILM Corporation

Inventor： Ryo NISHIO ,  Ryo HAMASAKI ,  Kimiatsu NOMURA ,  Yoichi MARUYAMA

IPC: H01L35/24 ,  C08G61/12

CPC classification number: H01L35/24 ,  C08G61/12 ,  C08G61/124 ,  C08G61/126 ,  C08G2261/11 ,  C08G2261/124 ,  C08G2261/1412 ,  C08G2261/1424 ,  C08G2261/1426 ,  C08G2261/1428 ,  C08G2261/148 ,  C08G2261/228 ,  C08G2261/312 ,  C08G2261/3142 ,  C08G2261/3162 ,  C08G2261/3221 ,  C08G2261/3223 ,  C08G2261/3243 ,  C08G2261/3244 ,  C08G2261/55 ,  H01L35/14 ,  H01L35/20 ,  H01L35/32

Abstract: A thermoelectric conversion element (1) having, on a substrate (12), a first electrode (13), a thermoelectric conversion layer (14), and a second electrode (15), wherein a nano conductive material and a low band gap material are contained in the thermoelectric conversion layer (14); an article for thermoelectric power generation and a power supply for a sensor using the thermoelectric conversion element (1); and a thermoelectric conversion material containing the nano conductive material and the low band gap material.

公开(公告)号：US20160062211A1

公开(公告)日：2016-03-03

申请号：US14934687

申请日：2015-11-06

Applicant: FUJIFILM Corporation

Inventor： Akihiro KANEKO ,  Kimiatsu NOMURA ,  Masataka SATO ,  Masaomi KIMURA

IPC: G02F1/361 ,  C07D207/44

CPC classification number: G02F1/3617 ,  C07D207/44 ,  C08K5/3415 ,  G02F1/061 ,  G02F1/3612 ,  G02F1/3615

Abstract: There is provided an organic non-linear optical material containing a compound represented by the Formula (I), and the Formula (I) is defined as herein, and a polymer binder: and an optical element comprising the organic non-linear optical material, and an optical modulator comprising the organic non-linear optical material, and a compound represented by the Formula (I) and the formula (I) is defined as herein.

Abstract translation: 提供了含有式（I）表示的化合物和式（I）如本文所定义的有机非线性光学材料和聚合物粘合剂：和包含有机非线性光学材料的光学元件， 并且包含有机非线性光学材料的光学调制剂和由式（I）和式（I）表示的化合物如本文所定义。

公开(公告)号：US20140054577A1

公开(公告)日：2014-02-27

申请号：US14070601

申请日：2013-11-04

Applicant: FUJIFILM Corporation

Inventor： Tetsuro MITSUI ,  Tetsu KITAMURA ,  Kimiatsu NOMURA ,  Toru HARADA

IPC: H01L51/00 ,  H01L27/30

CPC classification number: H01L51/0072 ,  C09B23/0066 ,  C09B57/007 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14645 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/307 ,  H01L51/0062 ,  H01L51/0078 ,  H01L51/4206 ,  H01L51/4213 ,  H01L51/447 ,  H01L2251/308 ,  Y02E10/549

Abstract: A photoelectric conversion element comprises a first photoelectric conversion part, the first photoelectric conversion part comprising: a pair of electrodes; and a photoelectric conversion film between the pair of electrodes, wherein the photoelectric conversion film comprises an organic photoelectric conversion material having an absorption peak in an infrared region of an absorption spectrum within a combined range of a visible region and the infrared region and generating an electric charge according to light absorbed, and the first photoelectric conversion part as a whole transmits 50% or more of light in the visible region.

Abstract translation: 光电转换元件包括第一光电转换部分，第一光电转换部分包括：一对电极; 以及所述一对电极之间的光电转换膜，其中所述光电转换膜包括在可见光区域和所述红外区域的组合范围内的吸收光谱的红外区域中具有吸收峰的有机光电转换材料， 根据光吸收的电荷，第一光电转换部整体在可见光区域透过50％以上的光。

公开(公告)号：US20130087682A1

公开(公告)日：2013-04-11

申请号：US13687950

申请日：2012-11-28

Applicant: FUJIFILM CORPORATION

Inventor： Kimiatsu NOMURA

IPC: H01L51/44

CPC classification number: H01L51/44 ,  C09B23/105 ,  H01L27/14638 ,  H01L27/14647 ,  H01L27/307 ,  H01L31/02162 ,  H01L31/103 ,  H01L51/0064 ,  H01L51/424 ,  H01L51/4246

Abstract: A photoelectric conversion device includes, in the following order: a first electrode; an electron blocking layer; a photoelectric conversion layer containing a merocyanine dye; a hole blocking layer; and a transparent electrode as a second electrode, and an absorption maximum wavelength in a thin film absorption spectrum of the photoelectric conversion layer containing a merocyanine dye is within a range of from 400 to 520 nm.

Abstract translation: 光电转换装置按以下顺序包括：第一电极; 电子阻挡层; 含有部花青染料的光电转换层; 空穴阻挡层; 作为第二电极的透明电极，含有部花青染料的光电转换层的薄膜吸收光谱的吸收最大波长在400〜520nm的范围内。

公开(公告)号：US20130069047A1

公开(公告)日：2013-03-21

申请号：US13674989

申请日：2012-11-13

Applicant: FUJIFILM Corporation

Inventor： Tetsuro MITSUI ,  Kimiatsu NOMURA ,  Mitsumasa HAMANO ,  Katsuyuki YOFU

IPC: H01L51/00

CPC classification number: H01L51/0032 ,  B82Y10/00 ,  H01L27/307 ,  H01L51/0046 ,  H01L51/0047 ,  H01L51/0059 ,  H01L51/0072 ,  H01L51/424 ,  H01L51/4253

Abstract: A photoelectric conversion element is provided and includes: an electrically conductive thin layer; an organic photoelectric conversion layer; and a transparent electrically conductive thin layer. The organic photoelectric conversion layer contains: a compound represented by formula (I); and a fullerene or a fullerene derivative.Formula (I): In the formula, Z1 represents an atomic group necessary for forming a 5- or 6-membered ring, L1, L2 and L3 each independently represents an unsubstituted methine group or a substituted methine group, D1 represents an atomic group, and n represents an integer of 0 or more.

Abstract translation: 提供了一种光电转换元件，包括：导电薄层; 有机光电转换层; 和透明导电薄层。 有机光电转换层包含：式（I）表示的化合物; 和富勒烯或富勒烯衍生物。 式（I）：式中，Z1表示形成5元或6元环所必需的原子团，L1，L2和L3各自独立地表示未取代的次甲基或取代的次甲基，D1表示原子团， n表示0以上的整数。

公开(公告)号：US20200035933A1

公开(公告)日：2020-01-30

申请号：US16593953

申请日：2019-10-04

Applicant: FUJIFILM Corporation

Inventor： Tomoaki YOSHIOKA ,  Kimiatsu NOMURA ,  Eiji FUKUZAKI

IPC: H01L51/00

Abstract: The present invention provides a photoelectric conversion element exhibiting excellent responsiveness, and excellent photoelectric conversion efficiency in a case where the photoelectric conversion film is a thin film, an optical sensor, an imaging element which include the photoelectric conversion element, and a compound. The photoelectric conversion element of the present invention includes a conductive film, a photoelectric conversion film, and a transparent conductive film, in this order, in which the photoelectric conversion film contains a compound represented by Formula (1) and having a structure represented by Formula (2).