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公开(公告)号:US08593206B2
公开(公告)日:2013-11-26
申请号:US13084885
申请日:2011-04-12
申请人: Huan-Neng Chen , Ying-Ta Lu , Mei-Show Chen , Chewn-Pu Jou
发明人: Huan-Neng Chen , Ying-Ta Lu , Mei-Show Chen , Chewn-Pu Jou
IPC分类号: G06F7/44
CPC分类号: H04L27/06 , G06G7/16 , H03D7/1441 , H03D7/1458 , H03D7/1491 , H03D2200/0019 , H04L27/04
摘要: According to some embodiments, an up-conversion mixer includes a mixer cell having an output node arranged to provide an output. An input stage is coupled to the mixer cell and arranged to receive an input signal. The mixer cell is configured to generate the output with an up-converted frequency compared to an input frequency of the input signal. The input stage is configured to reduce a third order harmonic term of the output so that an output power plot of the third order harmonic term with respect to an input power has a notch with a local minimum.
摘要翻译: 根据一些实施例,上变频混频器包括具有布置成提供输出的输出节点的混频器单元。 输入级耦合到混频器单元并被布置成接收输入信号。 混频器单元被配置为与输入信号的输入频率相比产生具有上转换频率的输出。 输入级被配置为减少输出的三阶谐波项,使得相对于输入功率的三阶谐波项的输出功率图具有局部最小值的陷波。
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公开(公告)号:US09559053B2
公开(公告)日:2017-01-31
申请号:US13091440
申请日:2011-04-21
申请人: Hsiao-Tsung Yen , Huan-Neng Chen , Yu-Ling Lin , Chin-Wei Kuo , Mei-Show Chen , Ho-Hsiang Chen , Min-Chie Jeng
发明人: Hsiao-Tsung Yen , Huan-Neng Chen , Yu-Ling Lin , Chin-Wei Kuo , Mei-Show Chen , Ho-Hsiang Chen , Min-Chie Jeng
IPC分类号: H01F5/00 , H01F27/28 , H01L23/522 , H01F17/00
CPC分类号: H01F27/2804 , H01F17/0013 , H01F2017/002 , H01F2017/004 , H01F2027/2809 , H01L23/5227 , H01L2924/0002 , H01L2924/00
摘要: A device includes a substrate, and a vertical inductor over the substrate. The vertical inductor includes a plurality of parts formed of metal, wherein each of the parts extends in one of a plurality of planes perpendicular to a major surface of the substrate. Metal lines interconnect neighboring ones of the plurality of parts of the vertical inductor.
摘要翻译: 器件包括衬底和衬底上的垂直电感器。 垂直电感器包括由金属形成的多个部件,其中每个部件在与基板的主表面垂直的多个平面中的一个平面中延伸。 金属线互连垂直电感器的多个部分中的相邻部分。
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公开(公告)号:US20130168809A1
公开(公告)日:2013-07-04
申请号:US13340856
申请日:2011-12-30
申请人: Hsiao-Tsung Yen , Yu-Ling Lin , Ying-Ta Lu , Huan-Neng Chen , Ho-Hsiang Chen
发明人: Hsiao-Tsung Yen , Yu-Ling Lin , Ying-Ta Lu , Huan-Neng Chen , Ho-Hsiang Chen
IPC分类号: H01L23/485
CPC分类号: H01F27/2804 , H01F5/003 , H01F2027/2809 , H01L23/5226 , H01L23/5227 , H01L23/528 , H01L28/10 , H01L2924/0002 , H01L2924/00
摘要: The present disclosure provides a semiconductor device. The semiconductor device includes a first inductor formed on a first substrate; a second inductor formed on a second substrate and conductively coupled with the first inductor as a transformer; and a plurality of micro-bump features configured between the first and second substrates. The plurality of micro-bump features include a magnetic material having a relative permeability substantially greater than one and are configured to enhance coupling between the first and second inductors.
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公开(公告)号:US20120268229A1
公开(公告)日:2012-10-25
申请号:US13091440
申请日:2011-04-21
申请人: Hsiao-Tsung Yen , Huan-Neng Chen , Yu-Ling Lin , Chin-Wei Kuo , Mei-Show Chen , Ho-Hsiang Chen , Min-Chie Jeng
发明人: Hsiao-Tsung Yen , Huan-Neng Chen , Yu-Ling Lin , Chin-Wei Kuo , Mei-Show Chen , Ho-Hsiang Chen , Min-Chie Jeng
CPC分类号: H01F27/2804 , H01F17/0013 , H01F2017/002 , H01F2017/004 , H01F2027/2809 , H01L23/5227 , H01L2924/0002 , H01L2924/00
摘要: A device includes a substrate, and a vertical inductor over the substrate. The vertical inductor includes a plurality of parts formed of metal, wherein each of the parts extends in one of a plurality of planes perpendicular to a major surface of the substrate. Metal lines interconnect neighboring ones of the plurality of parts of the vertical inductor.
摘要翻译: 器件包括衬底和衬底上的垂直电感器。 垂直电感器包括由金属形成的多个部件,其中每个部件在与基板的主表面垂直的多个平面中的一个平面中延伸。 金属线互连垂直电感器的多个部分中的相邻部分。
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公开(公告)号:US09177715B2
公开(公告)日:2015-11-03
申请号:US12952429
申请日:2010-11-23
申请人: Jun-De Jin , Fan-Ming Kuo , Huan-Neng Chen , Ming Hsien Tsai , Hsieh-Hung Hsieh , Tzu-Jin Yeh
发明人: Jun-De Jin , Fan-Ming Kuo , Huan-Neng Chen , Ming Hsien Tsai , Hsieh-Hung Hsieh , Tzu-Jin Yeh
CPC分类号: H02J5/005 , H01F5/00 , H01F17/0006 , H01F38/14 , H01F2017/0086 , H02J17/00 , H02J50/12
摘要: A transformer includes first and second semiconductor substrates. The first semiconductor substrate includes a first circuit, a first coil providing a first impedance, and a first capacitor coupled in parallel with the first coil. The second semiconductor substrate includes a second circuit, a second coil providing a second impedance and inductively coupled with the first coil, and a second capacitor coupled in parallel with the second coil.
摘要翻译: 变压器包括第一和第二半导体衬底。 第一半导体衬底包括第一电路,提供第一阻抗的第一线圈和与第一线圈并联耦合的第一电容器。 第二半导体衬底包括第二电路,提供第二阻抗并与第一线圈感应耦合的第二线圈以及与第二线圈并联耦合的第二电容器。
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公开(公告)号:US08610247B2
公开(公告)日:2013-12-17
申请号:US13340856
申请日:2011-12-30
申请人: Hsiao-Tsung Yen , Yu-Ling Lin , Ying-Ta Lu , Huan-Neng Chen , Ho-Hsiang Chen
发明人: Hsiao-Tsung Yen , Yu-Ling Lin , Ying-Ta Lu , Huan-Neng Chen , Ho-Hsiang Chen
IPC分类号: H01L27/08
CPC分类号: H01F27/2804 , H01F5/003 , H01F2027/2809 , H01L23/5226 , H01L23/5227 , H01L23/528 , H01L28/10 , H01L2924/0002 , H01L2924/00
摘要: The present disclosure provides a semiconductor device. The semiconductor device includes a first inductor formed on a first substrate; a second inductor formed on a second substrate and conductively coupled with the first inductor as a transformer; and a plurality of micro-bump features configured between the first and second substrates. The plurality of micro-bump features include a magnetic material having a relative permeability substantially greater than one and are configured to enhance coupling between the first and second inductors.
摘要翻译: 本发明提供一种半导体器件。 半导体器件包括形成在第一衬底上的第一电感器; 第二电感器,其形成在第二基板上,并与所述第一电感器作为变压器导电耦合; 以及配置在第一和第二基板之间的多个微凸块特征。 多个微凸块特征包括具有相对磁导率基本上大于1的磁性材料,并且被配置为增强第一和第二电感器之间的耦合。
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