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公开(公告)号：US20230020337A1
公开(公告)日：2023-01-19
申请号：US17949325
申请日：2022-09-21
Applicant: General Electric Company
Inventor： Cheng-Po Chen , Reza Ghandi , David Richard Esler , David Mulford Shaddock , Emad Andarawis Andarawis , Liang Yin
IPC: H01L21/768 , H01L23/31 , H01L23/00 , H01L23/532 , H01L21/02
Abstract: An electrical component and method for manufacturing the electrical component with a substrate a conductor stack having multiple layers and including at least one electrically conductive path. The conductor stack mounted to the substrate with a dielectric passivation stack encasing at least a portion of the conductor stack.
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公开(公告)号：US11538769B2
公开(公告)日：2022-12-27
申请号：US16220979
申请日：2018-12-14
Applicant: General Electric Company
Inventor： Stephen Daley Arthur , Liangchun Yu , Nancy Cecelia Stoffel , David Richard Esler , Christopher James Kapusta
Abstract: A semiconductor device is provided. The semiconductor device includes an electric field (E-field) suppression layer formed over a termination region. The E-field suppression layer is patterned with openings over metal contact areas. The E-field suppression layer has a thickness such that an electric field strength above the E-field suppression layer is below a dielectric strength of an adjacent material when the semiconductor device is operating at or below a maximum voltage.
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公开(公告)号：US11079359B2
公开(公告)日：2021-08-03
申请号：US16720471
申请日：2019-12-19
Applicant: General Electric Company
Abstract: A system includes a structure bonding layer and a sensor. The structure bonding layer is disposed on a structure. The structure bonding layer is a metallic alloy. The sensor includes a non-metallic wafer and a sensor bonding layer disposed on a surface of the non-metallic wafer. The sensor bonding layer is a metallic alloy. The sensor bonding layer is coupled to the structure bonding layer via a metallic joint, and the sensor is configured to sense data of the structure through the metallic joint, the structure bonding layer, and the sensor bonding layer.
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公开(公告)号：US20230273160A1
公开(公告)日：2023-08-31
申请号：US18134788
申请日：2023-04-14
Applicant: General Electric Company
CPC classification number: G01N29/223 , G01K11/265 , G01N29/2443 , G01N29/2462 , G01D11/245
Abstract: A system includes a sensor comprising a sensor bonding layer disposed on a surface of the sensor, wherein the sensor bonding layer is a metallic alloy. An inlay includes a planar outer surface, wherein the inlay may be disposed on a curved surface of a structure. A structure bonding layer may be disposed on the planar outer surface of the inlay, wherein the structure bonding layer is a metallic alloy. The sensor bonding layer is coupled to the structure bonding layer via a metallic joint, and the sensor is configured to sense data of the structure through the metallic joint, the structure bonding layer, and the sensor bonding layer. The inlay comprises at least one of a modulus of elasticity, a shape, a thickness, and a size configured to reduce strain transmitted to the sensor.
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公开(公告)号：US20220037201A1
公开(公告)日：2022-02-03
申请号：US16983380
申请日：2020-08-03
Applicant: General Electric Company
Inventor： Cheng-Po Chen , Reza Ghandi , David Richard Esler , David Mulford Shaddock , Emad Andarawis Andarawis , Liang Yin
IPC: H01L21/768 , H01L21/02 , H01L23/31 , H01L23/532 , H01L23/00
Abstract: An electrical component and method for manufacturing the electrical component with a substrate a conductor stack having multiple layers and including at least one electrically conductive path. The conductor stack mounted to the substrate with a dielectric passivation stack encasing at least a portion of the conductor stack.
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Patent Agency Ranking
公开(公告)号：US20210325348A1
公开(公告)日：2021-10-21
申请号：US17362407
申请日：2021-06-29
Applicant: General Electric Company
Abstract: A system includes a sensor comprising a sensor bonding layer disposed on a surface of the sensor, wherein the sensor bonding layer is a metallic alloy. An inlay includes a planar outer surface, wherein the inlay may be disposed on a curved surface of a structure. A structure bonding layer may be disposed on the planar outer surface of the inlay, wherein the structure bonding layer is a metallic alloy. The sensor bonding layer is coupled to the structure bonding layer via a metallic joint, and the sensor is configured to sense data of the structure through the metallic joint, the structure bonding layer, and the sensor bonding layer. The inlay comprises at least one of a modulus of elasticity, a shape, a thickness, and a size configured to reduce strain transmitted to the sensor.
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公开(公告)号：US20250076135A1
公开(公告)日：2025-03-06
申请号：US18953254
申请日：2024-11-20
Applicant: General Electric Company
Inventor： Robert James MacDonald , Yizhen Lin , Nicholas G. Yost , David Richard Esler
Abstract: An apparatus includes a first acoustic sensing resonator formed from a silicon substrate and has a first microelectromechanical system. The apparatus also includes a second acoustic sensing resonator formed from the silicon substrate and has a second microelectromechanical system. The second acoustic sensing resonator is arranged on the silicon substrate at a ninety degree (90°) angle with respect to the first acoustic sensing resonator and together the first acoustic sensing resonator and second acoustic sensing resonator form a torque sensor. A high temperature bonding surface is connected to the torque sensor for directly connecting the torque sensor to a metal object.
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公开(公告)号：US20240348036A1
公开(公告)日：2024-10-17
申请号：US18135497
申请日：2023-04-17
Applicant: General Electric Company
Inventor： David Richard Esler , Satish Prabhakaran , Ren Xie , Omer Gundogmus , Liqiang Yang , Constantinos Minas
IPC: H02H3/08 , H02H1/00 , H03K17/687
CPC classification number: H02H3/08 , H02H1/0007 , H03K17/687
Abstract: A solid-state circuit breaker may include power modules, gate drives, a current sensor, and a controller. Each power module may include two back-to-back MOSFETs with body diodes. The MOSFETs may have opposite orientations and a common source connection within the power module. The current sensor may detect current, and the controller may determine whether the current exceeds a predetermined threshold. When the current exceeds the predetermined threshold, the controller may transmit a signal to each gate drive to cause each gate drive to output a signal to the back-to-back MOSFETs such that the electrical current through the solid-state circuit breaker is blocked in both directions.
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公开(公告)号：US11630086B2
公开(公告)日：2023-04-18
申请号：US17362407
申请日：2021-06-29
Applicant: General Electric Company
Abstract: A system includes a sensor comprising a sensor bonding layer disposed on a surface of the sensor, wherein the sensor bonding layer is a metallic alloy. An inlay includes a planar outer surface, wherein the inlay may be disposed on a curved surface of a structure. A structure bonding layer may be disposed on the planar outer surface of the inlay, wherein the structure bonding layer is a metallic alloy. The sensor bonding layer is coupled to the structure bonding layer via a metallic joint, and the sensor is configured to sense data of the structure through the metallic joint, the structure bonding layer, and the sensor bonding layer. The inlay comprises at least one of a modulus of elasticity, a shape, a thickness, and a size configured to reduce strain transmitted to the sensor.
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公开(公告)号：US11328973B2
公开(公告)日：2022-05-10
申请号：US16912890
申请日：2020-06-26
Applicant: GENERAL ELECTRIC COMPANY
Inventor： David Richard Esler , Emad A. Andarawis
Abstract: A device comprises: a high temperature semiconductor device comprising a first surface, wherein the high temperature semiconductor device comprises an active area and a termination area disposed adjacent to the active area; an inorganic dielectric insulating layer disposed on the first surface, wherein the inorganic dielectric insulating layer fills a volume extending over an entirety of the termination area and comprises a thickness greater than or equal to 25 μm and less than or equal to 500 μm; and an electrical connector connecting the active area of the high temperature semiconductor device to an additional component of the device.
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