公开(公告)号：US20190229185A1

公开(公告)日：2019-07-25

申请号：US15876727

申请日：2018-01-22

Applicant: GLOBALFOUNDRIES INC.

Inventor： Siva P. ADUSUMILLI ,  Anthony K. STAMPER ,  Laura J. SCHUTZ ,  Cameron E. Luce

IPC: H01L29/06 ,  H01L27/12 ,  H01L29/78 ,  H01L21/762 ,  H01L21/84

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to sealed cavity structures having a planar surface and methods of manufacture. The structure includes a cavity formed in a substrate material and which has a curvature at its upper end. The cavity is covered with epitaxial material that has an upper planar surface.

公开(公告)号：US20190081138A1

公开(公告)日：2019-03-14

申请号：US15703220

申请日：2017-09-13

Applicant: GLOBALFOUNDRIES INC.

Inventor： Qizhi LIU ,  Steven M. SHANK ,  John J. ELLIS-MONAGHAN ,  Anthony K. STAMPER

IPC: H01L29/06 ,  H01L27/12 ,  H01L29/10 ,  H01L21/02 ,  H01L21/764 ,  H01L21/762 ,  H01L21/84

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a switch with local silicon on insulator (SOI) and deep trench isolation structures and methods of manufacture. The structure a structure comprises an air gap located under a device region and bounded by an upper etch stop layer and deep trench isolation structures.

公开(公告)号：US20150344293A1

公开(公告)日：2015-12-03

申请号：US14821997

申请日：2015-08-10

Applicant: GLOBALFOUNDRIES Inc.

Inventor： David L. HARAME ,  Anthony K. STAMPER

IPC: B81B3/00

CPC classification number: B81B3/0027 ,  B81B2201/0285 ,  H01L21/84 ,  H01L27/1203 ,  H01L41/1136 ,  H01L2224/73265 ,  H03H3/02 ,  H03H9/1007 ,  H03H9/173 ,  H03H2001/0064 ,  H03H2003/027 ,  H03H2009/155 ,  H03H2009/241

Abstract: Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS devices, methods of manufacture and design structure are provided. The method includes forming a single crystalline beam from a silicon layer on an insulator. The method further includes providing a coating of insulator material over the single crystalline beam. The method further includes forming a via through the insulator material exposing a wafer underlying the insulator. The insulator material remains over the single crystalline beam. The method further includes providing a sacrificial material in the via and over the insulator material. The method further includes providing a lid on the sacrificial material. The method further includes venting, through the lid, the sacrificial material and a portion of the wafer under the single crystalline beam to form an upper cavity above the single crystalline beam and a lower cavity in the wafer, below the single crystalline beam.

Abstract translation: 提供了与CMOS器件集成的体声波滤波器和/或体声波谐振器，制造方法和设计结构。 该方法包括从绝缘体上的硅层形成单晶束。 该方法还包括在单晶束上提供绝缘体材料涂层。 该方法还包括通过暴露出绝缘体下方的晶片的绝缘体材料形成通孔。 绝缘体材料保留在单晶束上。 该方法还包括在通孔和绝缘体材料上提供牺牲材料。 该方法还包括在牺牲材料上提供盖子。 该方法进一步包括通过盖子排出牺牲材料和在单一结晶束下方的晶片的一部分，以在单晶束之下形成单结晶束上方的上腔和晶片中的下腔。

公开(公告)号：US20200176304A1

公开(公告)日：2020-06-04

申请号：US16206375

申请日：2018-11-30

Applicant: GLOBALFOUNDRIES INC.

Inventor： Siva P. ADUSUMILLI ,  Steven M. SHANK ,  John J. ELLIS-MONAGHAN ,  Anthony K. STAMPER

IPC: H01L21/762 ,  H01L21/308 ,  H01L21/306 ,  H01L29/06 ,  H01L29/10

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to oxidized cavity structures within and under semiconductor devices and methods of manufacture. The structure includes: a substrate material; active devices over the substrate material; an oxidized trench structure extending into the substrate and surrounding the active devices; and one or more oxidized cavity structures extending from the oxidized trench structure and formed in the substrate material under the active devices.

公开(公告)号：US20190013382A1

公开(公告)日：2019-01-10

申请号：US15645655

申请日：2017-07-10

Applicant: GLOBALFOUNDRIES INC.

Inventor： Anthony K. STAMPER ,  Steven M. SHANK ,  John J. ELLIS-MONAGHAN ,  Siva P. ADUSUMILLI

IPC: H01L29/06 ,  H01L23/66 ,  H01L29/10 ,  H01L21/764

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to radio frequency (RF) switches with airgap structures and methods of manufacture. The structure includes a substrate with at least one airgap structure formed in a well region under at least one gate structure, and which extends to a junction formed by a source/drain region of the at least one gate structure.

公开(公告)号：US20180248001A1

公开(公告)日：2018-08-30

申请号：US15443276

申请日：2017-02-27

Applicant: GLOBALFOUNDRIES INC.

Inventor： Anthony K. STAMPER ,  Vincent J. MCGAHAY ,  Zhong-Xiang HE

IPC: H01L29/06 ,  H01L23/31 ,  H01L23/528

CPC classification number: H01L29/0619 ,  H01L23/3171 ,  H01L23/528 ,  H01L29/0649

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to segmented guard-ring and chip edge seals and methods of manufacture. The structure includes: a guard ring structure formed in a low-k dielectric material; and an edge seal structure formed through the low-k dielectric material to at least a substrate underneath the low-k dielectric material.