公开(公告)号：US20200176304A1

公开(公告)日：2020-06-04

申请号：US16206375

申请日：2018-11-30

Applicant: GLOBALFOUNDRIES INC.

Inventor： Siva P. ADUSUMILLI ,  Steven M. SHANK ,  John J. ELLIS-MONAGHAN ,  Anthony K. STAMPER

IPC: H01L21/762 ,  H01L21/308 ,  H01L21/306 ,  H01L29/06 ,  H01L29/10

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to oxidized cavity structures within and under semiconductor devices and methods of manufacture. The structure includes: a substrate material; active devices over the substrate material; an oxidized trench structure extending into the substrate and surrounding the active devices; and one or more oxidized cavity structures extending from the oxidized trench structure and formed in the substrate material under the active devices.

公开(公告)号：US20190121022A1

公开(公告)日：2019-04-25

申请号：US16216321

申请日：2018-12-11

Applicant: GLOBALFOUNDRIES INC.

Inventor： John J. ELLIS-MONAGHAN ,  Jeffrey P. GAMBINO ,  Mark D. JAFFE ,  Kirk D. PETERSON ,  Jed H. RANKIN

IPC: G02B6/122 ,  G02B6/136 ,  G02B6/125

Abstract: Methods and structures for shielding optical waveguides are provided. A method includes forming a first optical waveguide core and forming a second optical waveguide core adjacent to the first optical waveguide core. The method also includes forming an insulator layer over the first optical waveguide core and the second optical waveguide core. The method further includes forming a shielding structure in the insulator layer between the first optical waveguide core and the second optical waveguide core.

公开(公告)号：US20190013382A1

公开(公告)日：2019-01-10

申请号：US15645655

申请日：2017-07-10

Applicant: GLOBALFOUNDRIES INC.

Inventor： Anthony K. STAMPER ,  Steven M. SHANK ,  John J. ELLIS-MONAGHAN ,  Siva P. ADUSUMILLI

IPC: H01L29/06 ,  H01L23/66 ,  H01L29/10 ,  H01L21/764

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to radio frequency (RF) switches with airgap structures and methods of manufacture. The structure includes a substrate with at least one airgap structure formed in a well region under at least one gate structure, and which extends to a junction formed by a source/drain region of the at least one gate structure.

公开(公告)号：US20180166566A1

公开(公告)日：2018-06-14

申请号：US15378990

申请日：2016-12-14

Applicant: GLOBALFOUNDRIES INC.

Inventor： John J. ELLIS-MONAGHAN

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/40

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to poly gate extension source to body contact structures and methods of manufacture. The structure includes: a substrate having a doped region; a gate structure over the doped region, the gate structure having a main body and a gate extension region; and a body contact region straddling over the gate extension region and remote from the main body of the gate structure.

公开(公告)号：US20170250306A1

公开(公告)日：2017-08-31

申请号：US15594951

申请日：2017-05-15

Applicant: GLOBALFOUNDRIES INC.

Inventor： John J. ELLIS-MONAGHAN ,  John C.S. HALL ,  Marwan H. KHATER ,  Edward W. KIEWRA ,  Steven M. SHANK

IPC: H01L31/20 ,  H01L31/028 ,  H01L31/0203 ,  H01L27/146

CPC classification number: H01L31/202 ,  H01L21/02667 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14692 ,  H01L27/14694 ,  H01L27/14698 ,  H01L31/0203 ,  H01L31/028 ,  H01L31/208

Abstract: Photodetector structures and methods of manufacture are provided. The method includes forming undercuts about detector material formed on a substrate. The method further includes encapsulating the detector to form airgaps from the undercuts. The method further includes annealing the detector material causing expansion of the detector material into the airgaps.

公开(公告)号：US20200013855A1

公开(公告)日：2020-01-09

申请号：US16575675

申请日：2019-09-19

Applicant: GLOBALFOUNDRIES INC.

Inventor： Anthony K. STAMPER ,  Steven M. SHANK ,  John J. ELLIS-MONAGHAN ,  Siva P. ADUSUMILLI

IPC: H01L29/06 ,  H01L23/66 ,  H01L29/10 ,  H01L21/764

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to radio frequency (RF) switches with airgap structures and methods of manufacture. The structure includes a substrate with at least one airgap structure formed in a well region under at least one gate structure, and which extends to a junction formed by a source/drain region of the at least one gate structure.

公开(公告)号：US20190312142A1

公开(公告)日：2019-10-10

申请号：US15947364

申请日：2018-04-06

Applicant: GLOBALFOUNDRIES INC.

Inventor： Siva P. ADUSUMILLI ,  Steven M. SHANK ,  Anthony K. STAMPER ,  John J. ELLIS-MONAGHAN

IPC: H01L29/78 ,  H01L21/762 ,  H01L21/84 ,  H01L21/324 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/10 ,  H01L27/12 ,  H01L21/02 ,  H01L23/10

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to sealed cavity structures having a non-planar surface features and methods of manufacture. The structure includes a cavity formed in a substrate material. The cavity is covered with epitaxial material that has a non-planar surface topography which imparts a stress component on a transistor.

公开(公告)号：US20190081138A1

公开(公告)日：2019-03-14

申请号：US15703220

申请日：2017-09-13

Applicant: GLOBALFOUNDRIES INC.

Inventor： Qizhi LIU ,  Steven M. SHANK ,  John J. ELLIS-MONAGHAN ,  Anthony K. STAMPER

IPC: H01L29/06 ,  H01L27/12 ,  H01L29/10 ,  H01L21/02 ,  H01L21/764 ,  H01L21/762 ,  H01L21/84

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a switch with local silicon on insulator (SOI) and deep trench isolation structures and methods of manufacture. The structure a structure comprises an air gap located under a device region and bounded by an upper etch stop layer and deep trench isolation structures.