公开(公告)号：US20170271163A1

公开(公告)日：2017-09-21

申请号：US15072626

申请日：2016-03-17

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Min Gyu SUNG ,  Ruilong XIE ,  Chanro PARK ,  Hoon KIM ,  Kwan-Yong LIM

IPC: H01L21/3065 ,  H01L29/161 ,  H01L27/11 ,  H01L29/06 ,  H01L21/311 ,  H01L21/308

CPC classification number: H01L21/3065 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/31111 ,  H01L21/31144 ,  H01L27/11 ,  H01L28/00 ,  H01L29/0642 ,  H01L29/0657 ,  H01L29/161

Abstract: Methodologies and a device for SRAM patterning are provided. Embodiments include forming a spacer layer over a fin channel, the fin channel being formed in four different device regions; forming a bottom mandrel over the spacer layer; forming a top mandrel directly over the bottom mandrel, wherein the top and bottom mandrels including different materials; forming a buffer oxide layer over the top mandrel; forming an anti-reflective coating (ARC) over the first OPL; forming a photoresist (PR) over the ARC and patterning the PR; and etching the first OPL, ARC, buffer oxide, and top mandrel with the pattern of the PR, wherein a pitch of the PR as patterned is different in each of the four device regions.

公开(公告)号：US20160056238A1

公开(公告)日：2016-02-25

申请号：US14933501

申请日：2015-11-05

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Kwan-Yong LIM ,  Jody FRONHEISER ,  Christopher PRINDLE

IPC: H01L29/08 ,  H01L29/78

CPC classification number: H01L29/0847 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/785

Abstract: A method of forming raised S/D regions by partial EPI growth with a partial EPI liner therebetween and the resulting device are provided. Embodiments include forming groups of fins extending above a STI layer; forming a gate over the groups of fins; forming a gate spacer on each side of the gate; forming a raised S/D region proximate to each spacer on each fin of the groups of fins, each raised S/D region having a top surface, vertical sidewalls, and an undersurface; forming a liner over and between each raised S/D region; removing the liner from the top surface of each raised S/D region and from in between a group of fins; forming an overgrowth region on the top surface of each raised S/D region; forming an ILD over and between the raised S/D regions; and forming a contact through the ILD, down to the raised S/D regions.