公开(公告)号：US09318379B2

公开(公告)日：2016-04-19

申请号：US14939439

申请日：2015-11-12

申请人： Eun-Ok Lee ,  Nam-Gun Kim ,  Gyuhwan Oh ,  Heesook Park ,  Hyun-Jung Lee ,  Kyungho Jang

发明人： Eun-Ok Lee ,  Nam-Gun Kim ,  Gyuhwan Oh ,  Heesook Park ,  Hyun-Jung Lee ,  Kyungho Jang

IPC分类号： H01L21/768

CPC分类号： H01L23/5329 ,  H01L21/764 ,  H01L21/7682 ,  H01L21/76831 ,  H01L21/76889 ,  H01L21/76895 ,  H01L21/76897 ,  H01L23/53209 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10855 ,  H01L27/10876 ,  H01L27/10888 ,  H01L2924/0002 ,  H01L2924/00

摘要： A spacer covering a sidewall of a contact plug includes a relatively more damaged first portion and a relatively less damaged second portion. An interface of the first and second portions of the spacer is spaced apart from a metal silicide layer of the contact plug. Thus reliability of the semiconductor device may be improved. Related fabrication methods are also described.

摘要翻译： 覆盖接触塞的侧壁的间隔件包括相对更受损的第一部分和相对较少受损的第二部分。 间隔物的第一和第二部分的界面与接触塞的金属硅化物层间隔开。 因此，可以提高半导体器件的可靠性。 还描述了相关的制造方法。

公开(公告)号：US20110186798A1

公开(公告)日：2011-08-04

申请号：US13019822

申请日：2011-02-02

申请人： Hyun-Suk Kwon ,  Hyeyoung Park ,  Jeonghee Park ,  Gyuhwan Oh ,  Jinho Oh ,  Doo-Hwan Park

发明人： Hyun-Suk Kwon ,  Hyeyoung Park ,  Jeonghee Park ,  Gyuhwan Oh ,  Jinho Oh ,  Doo-Hwan Park

IPC分类号： H01L45/00

CPC分类号： H01L45/144 ,  G11C13/0004 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/1683 ,  H01L45/1691

摘要： Phase changeable memory devices are provided including a mold insulating layer on a substrate, the mold insulating layer defining an opening therein. A phase-change material layer is provided in the opening. The phase-change material includes an upper surface that is below a surface of the mold insulating layer. A first electrode is provided in the opening and on the phase-change material layer. A spacer is provided between a sidewall of the mold insulating layer and the phase-change material layer and the first electrode. The upper surface of the first electrode is coplanar with the surface of the mold insulating layer. Related methods are also provided.

摘要翻译： 提供了相变存储器件，其包括在基底上的模具绝缘层，模具绝缘层在其中限定开口。 在开口中设置相变材料层。 相变材料包括在模具绝缘层的表面下方的上表面。 第一电极设置在开口和相变材料层上。 在模具绝缘层的侧壁和相变材料层和第一电极之间设置间隔件。 第一电极的上表面与模具绝缘层的表面共面。 还提供了相关方法。

公开(公告)号：US07863173B2

公开(公告)日：2011-01-04

申请号：US11775657

申请日：2007-07-10

申请人： Shin-Jae Kang ,  Gyuhwan Oh ,  Insun Park ,  Hyunseok Lim ,  Nak-Hyun Lim

发明人： Shin-Jae Kang ,  Gyuhwan Oh ,  Insun Park ,  Hyunseok Lim ,  Nak-Hyun Lim

IPC分类号： H01L21/20

CPC分类号： H01L27/115 ,  H01L27/11521 ,  H01L27/2409 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

摘要： Methods of fabricating integrated circuit memory cells and integrated circuit memory cells are disclosed. An integrated circuit memory cell can be fabricated by forming a cup-shaped electrode on sidewalls of an opening in an insulation layer and through the opening on an ohmic layer that is stacked on a conductive structure. An insulation filling member is formed that at least partially fills an interior of the electrode. The insulation filling member is formed within a range of temperatures that is sufficiently low to not substantially change resistance of the ohmic layer. A variable resistivity material is formed on the insulation filling member and is electrically connected to the electrode.

摘要翻译： 公开了制造集成电路存储单元和集成电路存储单元的方法。 可以通过在绝缘层中的开口的侧壁上形成杯形电极，并通过层叠在导电结构上的欧姆层上的开口来制造集成电路存储单元。 形成绝缘填充构件，其至少部分地填充电极的内部。 绝缘填充构件形成在足够低的温度范围内，而不能实质上改变欧姆层的电阻。 在绝缘填充构件上形成可变电阻率材料并与电极电连接。