Electron multiplier having resistance value variation suppression and stablization

    公开(公告)号:US11011358B2

    公开(公告)日:2021-05-18

    申请号:US16623511

    申请日:2018-04-10

    Abstract: The present embodiment relates to an electron multiplier having a structure configured to suppress and stabilize a variation of a resistance value in a wider temperature range. In the electron multiplier, a resistance layer sandwiched between a substrate and a secondary electron emitting layer formed of an insulating material includes a metal layer in which a plurality of metal particles formed of a metal material whose resistance value has a positive temperature characteristic are two-dimensionally arranged on a layer formation surface, which is coincident with or substantially parallel to a channel formation surface of the substrate, in the state of being adjacent to each other with a part of the first insulating material interposed therebetween, the metal layer having a thickness set to 5 to 40 angstroms.

    Transmissive photocathode and electron tube

    公开(公告)号:US10790129B2

    公开(公告)日:2020-09-29

    申请号:US16634693

    申请日:2018-05-14

    Abstract: A transmissive photocathode includes a light transmitting substrate that has a first surface on which light is incident and a second surface which emits light incident from a side of the first surface, a photoelectric conversion layer that is provided on the second surface side of the light transmitting substrate and converts the light emitted from the second surface into photoelectrons, a light transmitting conductive layer that is provided between the light transmitting substrate and the photoelectric conversion layer and is composed of a single-layered graphene, and a thermal stress alleviation layer that is provided between the photoelectric conversion layer and the light transmitting conductive layer and has light transmissivity. A thermal expansion coefficient of the thermal stress alleviation layer is smaller than a thermal expansion coefficient of the photoelectric conversion layer and larger than a thermal expansion coefficient of the graphene.

    Electron tube
    14.
    发明授权
    Electron tube 有权
    电子管

    公开(公告)号:US09293308B2

    公开(公告)日:2016-03-22

    申请号:US14425810

    申请日:2013-07-31

    CPC classification number: H01J43/18 H01J43/28

    Abstract: In an electron tube, an electrical resistance film having a stacked structure of electrically insulating layers and electrically conductive layers is formed on holding surfaces of bases in insulating substrates. This electrical resistance film is made as a firm and fine film with a desired resistance by use of an atomic layer deposition method, which can suppress electrification of the bases comprised of an insulating material. This makes it feasible to stably maintain withstand voltage characteristics.

    Abstract translation: 在电子管中,在绝缘基板的基板的保持面上形成具有电绝缘层和导电层的堆叠结构的电阻膜。 该电阻膜通过使用可以抑制由绝缘材料构成的基体的带电的原子层沉积方法制成具有所需电阻的牢固且细小的膜。 这使得稳定地保持耐压特性成为可能。

Patent Agency Ranking