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    OPTICAL DEVICE HAVING WAVEGUIDE INTEGRATED MODULATOR AND LIGHT MONITORING AVALANCHE PHOTODIODE
    11.
    发明公开
    OPTICAL DEVICE HAVING WAVEGUIDE INTEGRATED MODULATOR AND LIGHT MONITORING AVALANCHE PHOTODIODE 审中-公开

    公开(公告)号：US20230228943A1

    公开(公告)日：2023-07-20

    申请号：US17648250

    申请日：2022-01-18

    Applicant: Hewlett Packard Enterprise Development LP

    Inventor： Yuan Yuan ,  Di Liang

    IPC: G02B6/293 ,  G02B6/12 ,  H01L31/107

    CPC classification number: G02B6/2934 ,  G02B6/12019 ,  H01L31/107

    Abstract: Examples described herein relate to an optical device, such as, a ring resonator, that includes a ring waveguide. The ring resonator includes a ring waveguide to allow passage of light therethrough. Further, the ring resonator includes a modulator formed along a first section of the circumference of the ring waveguide to modulate the light inside the ring waveguide based on an application of a first reverse bias voltage to the modulator. Moreover, the ring resonator includes an avalanche photodiode (APD) isolated from the modulator and formed along a second section of the circumference of the ring waveguide to detect the intensity of the light inside the ring waveguide based on an application of a second reverse bias voltage to the APD. The second section is shorter than the first section, and the second reverse bias voltage is higher than the first reverse bias voltage.

    Temperature insensitive optical receiver
    12.
    发明授权
    Temperature insensitive optical receiver 有权

    公开(公告)号：US11637214B2

    公开(公告)日：2023-04-25

    申请号：US17664462

    申请日：2022-05-23

    Applicant: Hewlett Packard Enterprise Development LP

    Inventor： Zhihong Huang ,  Di Liang ,  Yuan Yuan

    IPC: H01L21/20 ,  H01L29/861 ,  H01L31/105 ,  H01L31/028 ,  H04B10/66 ,  H01L27/144 ,  H01L31/18 ,  H04J14/02

    Abstract: A device may include: a highly doped n+ Si region; an intrinsic silicon multiplication region disposed on at least a portion of the n+ Si region, the intrinsic silicon multiplication having a thickness of about 90-110 nm; a highly doped p− Si charge region disposed on at least part of the intrinsic silicon multiplication region, the p− Si charge region having a thickness of about 40-60 nm; and a p+ Ge absorption region disposed on at least a portion of the p− Si charge region; wherein the p+ Ge absorption region is doped across its entire thickness. The thickness of the n+ Si region may be about 100 nm and the thickness of the p− Si charge region may be about 50 nm. The p+ Ge absorption region may confine the electric field to the multiplication region and the charge region to achieve a temperature stability of 4.2 mV/°C.

    TEMPERATURE INSENSITIVE OPTICAL RECEIVER
    13.
    发明申请
    TEMPERATURE INSENSITIVE OPTICAL RECEIVER 有权

    公开(公告)号：US20230057021A1

    公开(公告)日：2023-02-23

    申请号：US17664462

    申请日：2022-05-23

    Applicant: Hewlett Packard Enterprise Development LP

    Inventor： Zhihong Huang ,  Di Liang ,  Yuan Yuan

    IPC: H01L31/105 ,  H01L31/028 ,  H04B10/66 ,  H01L27/144 ,  H01L31/18

    Abstract: A device may include: a highly doped n+ Si region; an intrinsic silicon multiplication region disposed on at least a portion of the n+ Si region, the intrinsic silicon multiplication having a thickness of about 90-110 nm; a highly doped p− Si charge region disposed on at least part of the intrinsic silicon multiplication region, the p− Si charge region having a thickness of about 40-60 nm; and a p+ Ge absorption region disposed on at least a portion of the p− Si charge region; wherein the p+ Ge absorption region is doped across its entire thickness. The thickness of the n+ Si region may be about 100 nm and the thickness of the p− Si charge region may be about 50 nm. The p+ Ge absorption region may confine the electric field to the multiplication region and the charge region to achieve a temperature stability of 4.2 mV/° C.

    Quantum-dot photonics
    15.
    发明授权
    Quantum-dot photonics 有权

    公开(公告)号：US11557877B2

    公开(公告)日：2023-01-17

    申请号：US16489495

    申请日：2017-02-28

    Applicant: Hewlett Packard Enterprise Development LP

    Inventor： Geza Kurczveil ,  Di Liang ,  Raymond G. Beausoleil

    IPC: H01S5/10 ,  G02B6/12 ,  G02B6/122 ,  H01S5/02 ,  H01S5/34

    Abstract: Examples disclosed herein relate to quantum-dot (QD) photonics. In accordance with some of the examples disclosed herein, a QD semiconductor optical amplifier (SOA) may include a silicon substrate and a QD layer above the silicon substrate. The QD layer may include an active gain region to amplify a lasing mode received from an optical signal generator. The QD layer may have a gain recovery time such that the active gain region amplifies the received lasing mode without pattern effects. A waveguide may be included in an upper silicon layer of the silicon substrate. The waveguide may include a mode converter to facilitate optical coupling of the received lasing mode between the QD layer and the waveguide.

    OPTICAL COUPLER
    17.
    发明申请
    OPTICAL COUPLER 有权

    公开(公告)号：US20220091446A1

    公开(公告)日：2022-03-24

    申请号：US16948579

    申请日：2020-09-24

    Applicant: Hewlett Packard Enterprise Development LP

    Inventor： Stanley Cheung ,  Di Liang ,  Sudharsanan Srinivasan

    IPC: G02F1/025

    Abstract: Examples described herein relate to an optical coupler. The optical coupler may include a first optical waveguide base layer, a second optical waveguide base layer, an insulating layer disposed over at least a portion of both the first optical waveguide base layer and the second optical waveguide base layer, and a semiconductor material layer disposed over the insulating layer. Overlapping portions of the first optical waveguide base layer, the insulating layer, and the semiconductor material layer form a first optical waveguide, and overlapping portions of the second optical waveguide base layer, the insulating layer, and the semiconductor material layer form a second optical waveguide. Moreover, the optical coupler may include a plurality of metal contacts to receive one or more first biasing voltages to operate one of the first optical waveguide base layer and the second optical waveguide base layer in an accumulation mode.

    LOW DRIVE VOLTAGE MULTI-WAVELENGTH TRANSMITTER
    18.
    发明申请
    LOW DRIVE VOLTAGE MULTI-WAVELENGTH TRANSMITTER 有权

    公开(公告)号：US20210405499A1

    公开(公告)日：2021-12-30

    申请号：US16946653

    申请日：2020-06-30

    Applicant: Hewlett Packard Enterprise Development LP

    Inventor： Sudharsanan Srinivasan ,  Di Liang ,  Geza Kurczveil ,  Raymond G. Beausoleil

    IPC: G02F1/225 ,  H04B10/50 ,  H04B10/25

    Abstract: Examples herein relate to optical systems. In particular, implementations herein relate to an optical system including an optical transmitter configured to transmit optical signals. The optical transmitter includes a first optical source coupled to an input waveguide and configured to emit light having different wavelengths through the input waveguide. The optical transmitter includes a Mach-Zehnder interferometer that includes a first arm and a second arm. The MZI further includes a first optical coupler configured to couple the emitted light from the input waveguide to the first and second arms and an array of two or more second optical sources coupled to the first arm. Each of the two or more second optical sources are configured to be injection locked to a different respective wavelength of the emitted light transmitted from the first optical source. The MZI further includes a second optical coupler configured to combine the emitted light from the first and second arms after propagating therethrough.

    Defect-free heterogeneous substrates
    19.
    发明授权
    Defect-free heterogeneous substrates 有权

    公开(公告)号：US11004681B2

    公开(公告)日：2021-05-11

    申请号：US15930688

    申请日：2020-05-13

    Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

    Inventor： Di Liang

    IPC: H01L21/02 ,  H01L21/764 ,  H01L29/06

    Abstract: In example implementations of a heterogeneous substrate, the heterogeneous substrate includes a first material having an air trench, a second material coupled to the first material, a dielectric mask on a first portion of the second material and an active region that is grown on a remaining portion of the second material. An air gap may be formed in the air trench by the second material coupled to the first material. Defects in the second material may be contained to an area below the dielectric mask and the active region may remain defect free.

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