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公开(公告)号：US20240184180A1
公开(公告)日：2024-06-06
申请号：US18060903
申请日：2022-12-01
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor： Yuan Yuan , Stanley Cheung , Yiwei Peng , Zhihong Huang , Marco Fiorentino
CPC classification number: G02F1/225 , G02F1/212 , G02F2203/50
Abstract: Example optical devices having a Mach-Zehnder interferometer (MZI) with improved linearity are presented. An example optical device may include an MZI and a microring resonator (MRR) optically coupled to any one of a first optical waveguide arm or a second optical waveguide arm, where the MRR is operable in a resonance state and in an off-resonance state during operation of the optical device. The MZI includes a length difference between the first optical waveguide arm and the second optical waveguide arm thereby achieving a quarter-period phase delay between optical signals of the first optical waveguide arm and the second optical waveguide arm such that a superlinear transmission region of the microring resonator is aligned with peaks of an optical output of the MZI improving linearity of the optical output of the MZI.
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公开(公告)号：US20230408852A1
公开(公告)日：2023-12-21
申请号：US17843352
申请日：2022-06-17
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor： Stanley Cheung , Geza Kurczveil , Yuan Yuan , Xian Xiao , Raymond G. Beausoleil
IPC: G02F1/017
CPC classification number: G02F1/01708
Abstract: Implementations disclosed herein provide for devices and methods for obtaining parity time (PT) symmetric directional couplers through improved phase tuning, along with separate optical gain and optical loss tuning. The present disclosure integrates phase tuning and optical gain/loss tuning structures into waveguides of directional couplers disclosed herein. In some examples, directional couplers disclosed herein integrate one or more hybrid metal-oxide-semiconductor capacitors (MOSCAPs) formed by a dielectric layer between two semiconductor layers that provide for phase tuning via plasma dispersion and/or carrier accumulation depending on voltage bias polarity, and one or more optically active medium that provide for optical gain or loss tuning depending on voltage bias polarity.
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3.发明公开公开(公告)号：US20230228943A1
公开(公告)日：2023-07-20
申请号：US17648250
申请日：2022-01-18
Applicant: Hewlett Packard Enterprise Development LP
IPC: G02B6/293 , G02B6/12 , H01L31/107
CPC classification number: G02B6/2934 , G02B6/12019 , H01L31/107
Abstract: Examples described herein relate to an optical device, such as, a ring resonator, that includes a ring waveguide. The ring resonator includes a ring waveguide to allow passage of light therethrough. Further, the ring resonator includes a modulator formed along a first section of the circumference of the ring waveguide to modulate the light inside the ring waveguide based on an application of a first reverse bias voltage to the modulator. Moreover, the ring resonator includes an avalanche photodiode (APD) isolated from the modulator and formed along a second section of the circumference of the ring waveguide to detect the intensity of the light inside the ring waveguide based on an application of a second reverse bias voltage to the APD. The second section is shorter than the first section, and the second reverse bias voltage is higher than the first reverse bias voltage.
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公开(公告)号：US11637214B2
公开(公告)日：2023-04-25
申请号：US17664462
申请日：2022-05-23
Applicant: Hewlett Packard Enterprise Development LP
Inventor： Zhihong Huang , Di Liang , Yuan Yuan
IPC: H01L21/20 , H01L29/861 , H01L31/105 , H01L31/028 , H04B10/66 , H01L27/144 , H01L31/18 , H04J14/02
Abstract: A device may include: a highly doped n+ Si region; an intrinsic silicon multiplication region disposed on at least a portion of the n+ Si region, the intrinsic silicon multiplication having a thickness of about 90-110 nm; a highly doped p− Si charge region disposed on at least part of the intrinsic silicon multiplication region, the p− Si charge region having a thickness of about 40-60 nm; and a p+ Ge absorption region disposed on at least a portion of the p− Si charge region; wherein the p+ Ge absorption region is doped across its entire thickness. The thickness of the n+ Si region may be about 100 nm and the thickness of the p− Si charge region may be about 50 nm. The p+ Ge absorption region may confine the electric field to the multiplication region and the charge region to achieve a temperature stability of 4.2 mV/°C.
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公开(公告)号：US20230057021A1
公开(公告)日：2023-02-23
申请号：US17664462
申请日：2022-05-23
Applicant: Hewlett Packard Enterprise Development LP
Inventor： Zhihong Huang , Di Liang , Yuan Yuan
IPC: H01L31/105 , H01L31/028 , H04B10/66 , H01L27/144 , H01L31/18
Abstract: A device may include: a highly doped n+ Si region; an intrinsic silicon multiplication region disposed on at least a portion of the n+ Si region, the intrinsic silicon multiplication having a thickness of about 90-110 nm; a highly doped p− Si charge region disposed on at least part of the intrinsic silicon multiplication region, the p− Si charge region having a thickness of about 40-60 nm; and a p+ Ge absorption region disposed on at least a portion of the p− Si charge region; wherein the p+ Ge absorption region is doped across its entire thickness. The thickness of the n+ Si region may be about 100 nm and the thickness of the p− Si charge region may be about 50 nm. The p+ Ge absorption region may confine the electric field to the multiplication region and the charge region to achieve a temperature stability of 4.2 mV/° C.
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Patent Agency Ranking
公开(公告)号：US11422027B1
公开(公告)日：2022-08-23
申请号：US17177024
申请日：2021-02-16
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor： Yuan Yuan , Thomas Van Vaerenbergh , Bassem Tossoun , Di Liang
Abstract: An apparatus includes a photodetector and a memristor coupled to the photodetector. The photodetector is configured to receive and convert optical signals to electrical signals to program the memristor to an on or off state. The apparatus further includes a ring resonator coupled to the memristor and configured to modulate light based on the on or off state of the memristor.
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公开(公告)号：US20250021809A1
公开(公告)日：2025-01-16
申请号：US18487452
申请日：2023-10-16
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor： YIWEI PENG , Xian Xiao , Yuan Yuan , Stanley Cheung , Sean Hooten , Thomas Van Vaerenbergh , Marco Fiorentino , Zhihong Huang
IPC: G06N3/067
Abstract: Systems and methods are provided for devices and methods for implementing an optical neural network (ONN) by leveraging resonator structures, such on micro-ring resonators (MRRs). Examples include unit cells configured to perform a linear transformation on optical signals. Each unit cell comprises a plurality of signal mixing components optically coupled to between adjacent waveguides, where each signal mixing component corresponds to a distinct wavelength and is configured to mix optical signals on the adjacent waveguides at the distinct wavelength. Each unit cell also includes a plurality of phase tuning components each corresponding to a distinct wavelength and configured to adjust a phase of a mixed optical signal at the distinct wavelength.
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公开(公告)号：US20240296320A1
公开(公告)日：2024-09-05
申请号：US18178094
申请日：2023-03-03
Applicant: Hewlett Packard Enterprise Development LP
Inventor： Yiwei Peng , Yuan Yuan , Stanley Cheung , Wayne Victor Sorin , Marco Fiorentino
Abstract: An example microring resonator (MRR) based optical device having improved linearity is presented. The optical device includes a first MRR and a first bus waveguide optically coupled to the first MRR. Further, the optical device includes a second MRR optically coupled to the first MRR, and a second bus waveguide optically coupled to the second MRR. The first MRR and the second MRR are formed between the first bus waveguide and the second bus waveguide. The optical coupling between the first MRR and the second MRR increases the linearity in the optical output of the optical device.
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公开(公告)号：US11953766B2
公开(公告)日：2024-04-09
申请号：US17843352
申请日：2022-06-17
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor： Stanley Cheung , Geza Kurczveil , Yuan Yuan , Xian Xiao , Raymond G. Beausoleil
IPC: G02F1/017
CPC classification number: G02F1/01708
Abstract: Implementations disclosed herein provide for devices and methods for obtaining parity time (PT) symmetric directional couplers through improved phase tuning, along with separate optical gain and optical loss tuning. The present disclosure integrates phase tuning and optical gain/loss tuning structures into waveguides of directional couplers disclosed herein. In some examples, directional couplers disclosed herein integrate one or more hybrid metal-oxide-semiconductor capacitors (MOSCAPs) formed by a dielectric layer between two semiconductor layers that provide for phase tuning via plasma dispersion and/or carrier accumulation depending on voltage bias polarity, and one or more optically active medium that provide for optical gain or loss tuning depending on voltage bias polarity.
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公开(公告)号：US20240036365A1
公开(公告)日：2024-02-01
申请号：US17815403
申请日：2022-07-27
Applicant: Hewlett Packard Enterprise Development LP
Inventor： Yiwei Peng , Yuan Yuan , Stanley Cheung , Zhihong Huang
CPC classification number: G02F1/025 , G02B6/12004 , G02B6/34
Abstract: Examples described herein relate to an optical device that entails phase shifting an optical signal. The optical device includes an optical waveguide having a first semiconductor material region and a second semiconductor material region formed adjacent to each other and defining a junction therebetween. Further, the optical device includes an insulating layer formed on top of the optical waveguide. Moreover, the optical device includes a III-V semiconductor layer formed on top of the insulating layer causing an optical mode of an optical signal passing through the optical waveguide to overlap with the first semiconductor material region, the second semiconductor material region, the insulating layer, and the III-V semiconductor layer thereby resulting in a phase shift in the optical signal passing through the optical waveguide.
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