摘要:
Electrodes made from metallic material are formed on a layer of dielectric material. A bottom layer of at least one of the electrodes constitutes a catalyst material in direct contact with the layer of dielectric material. Nanowires are grown by means of the catalyst, between the electrodes, parallel to the layer of dielectric material. The nanowires connecting the two electrodes are then made from single-crystal semi-conductor material and in contact with the layer of dielectric material.
摘要:
The disclosure concerns a method, an apparatus and a system for producing or equipping paperboard such that information carriers can be implanted between two layers of material, together with a piece of paperboard material produced in this way and a package. In particular, the disclosure concerns the implantation of an information carrier in corrugated paperboard, taking into account cuts that are subsequently to be made in the transverse direction, the distance of the position at which the cross-cuts are made from the position at which the information carriers are applied, and the movement executed by the web of material between the application position and the cross-cutting position.
摘要:
Double gate transistor microelectronic device comprising: a support, a structure suited to forming at least one multi-branch channel and comprising a plurality of separate parallel semi-conductor rods and situated in a plane orthogonal to the principal plane of the support, the rods linking a first block suited to forming a source region of the transistor and a second block provided, suited to forming a drain region of the transistor, a first gate electrode situated on one side of said structure against the sides of said semi-conductor rods, a second gate electrode, separate from the first gate and situated on another side of the structure against the opposite sides of the rods, the semi-conductor rods and one or several insulating rods situated between the semi-conductor rods, separating the first gate electrode and the second gate electrode.
摘要:
A method for fabricating a microelectronic device comprising: a support, an etched stack of thin layers comprising: at least one first block and at least one second block resting on the support, in which at least one drain region and at least one source region, respectively, are capable of being formed, several semiconductor bars connecting a first zone of the first block and another zone of the second block, and able to form a multi-branch transistor channel, or several transistor channels, the device also comprising: a gate surrounding said bars and located between said first block and said second block, the gate being in contact with a first and a second insulating spacer in contact with at least one sidewall of the first block and with at least one sidewall of the second block, respectively, and at least partially separated from the first block and the second block, via said insulating spacers.
摘要:
The disclosure concerns a microelectronic device provided with one or more >, able to form one or more transistor channels, and optimized in terms of arrangement, shape or/and composition. The invention also uses a method for fabricating said device, comprising the steps of: the forming, in one or more thin layers resting on a support, of a first block and a second block in which at least one transistor drain region and at least one transistor source region are respectively intended to be formed, and of a structure connecting the first block to the second block, and the forming, on the surface of the structure, of wires connecting a first region of the first block with another region of the second block which faces the first region.
摘要:
The invention relates to a field-effect microelectronic device, as well as the method of production thereof. The device includes a substrate as well as at least one improved structure capable of forming one or more transistor channels. This structure, formed by a plurality of bars stacked on the substrate, can make it possible to save space in the integration of field-effect transistors as well as to improve the performance thereof.
摘要:
A microelectronic method for the fabrication of a transistor gate using a precursor material that is suitable for being broken down into at least one metallic material after having been exposed to an electron beam. The invention applies in particular to the fabrication of multi-channel transistors, of the FinFET, suspended-channel, ITS or GAA type.
摘要:
The invention concerns a micro-electronic device comprising a substrate, a first insulating zone and a second insulating zone laying on said substrate, a first active zone comprising at least one layer made of a first semi-conductor crystalline material, resting on said first insulating zone which insulates it from the substrate, at least one second active zone comprising at least one layer in a second semi-conductor crystalline material, laying on said second insulating zone which insulates it from the substrate, said first semi-conductor crystalline material having a different composition from that of the second semi-conductor crystalline material and/or different crystalline orientation from that of the second semi-conductor crystalline material and/or mechanical strains from that of the second semi-conductor crystalline material.
摘要:
The invention relates to a method for straining or deforming a pattern or a thin layer (24), starting from an initial component comprising the said thin layer and a prestressed layer (20), this method comprising: an etching step of the prestressed layer, perpendicular to its surface.
摘要:
An endoscopic instrument with a hollow shank which on the proximal side is provided with a connection part with at least one suction connection and/or rinsing connection, with a coupling part for fixing a working insert. The coupling part is mounted rotatably with respect to the connection part. The endoscopic instrument furthermore includes means for the detachable connection of the coupling part and the connection part, as well as an annular axial seal which is arranged between the connection part and the coupling part.