公开(公告)号：US06179950B2

公开(公告)日：2001-01-30

申请号：US09252698

申请日：1999-02-18

申请人： Guoqiang (David) Zhang ,  Ralph V. Vogelgesang ,  Gregory Potts ,  Henry F. Erk

发明人： Guoqiang (David) Zhang ,  Ralph V. Vogelgesang ,  Gregory Potts ,  Henry F. Erk

IPC分类号： B32B3100

CPC分类号： B24B37/11 ,  B24D11/06 ,  B24D13/12 ,  B24D13/14 ,  Y10T156/1066 ,  Y10T156/1079 ,  Y10T428/195 ,  Y10T428/213

摘要： A process for joining together a first polishing pad with a second polishing pad to form a larger pad for a machine that performs chemical-mechanical polishing of silicon wafers. The process includes laying a first polishing pad on a surface and laying a second pad on the surface so that a portion of the second pad overlies a portion of the first pad, creating an overlap region. The first and second pads in the overlap region are cut through to form a first cut edge on the first pad and a second cut edge on the second pad, the first and second cut edges having shapes which are complementary. The first and second cut edges are brought into engagement, and the first pad is joined to the second pad at the first and second cut edges. Cutting is done in a first direction that is generally opposite to a second direction that a polishing fluid is expected to move on an surface of the pad during operation of the polishing machine, thereby sloping the first and second cut edges away from the second direction to inhibit passage of polishing fluid between the first and second cut edges.

摘要翻译： 一种用于将第一抛光垫与第二抛光垫接合在一起以形成用于执行硅晶片的化学机械抛光的机器的较大垫的工艺。 该过程包括在表面上铺设第一抛光垫并在表面上铺设第二垫，使得第二垫的一部分覆盖在第一垫的一部分上，产生重叠区域。 切割重叠区域中的第一和第二焊盘以在第一焊盘上形成第一切割边缘，并且在第二焊盘上形成第二切割边缘，第一和第二切割边缘具有互补的形状。 第一和第二切割边缘被接合，并且第一焊盘在第一和第二切割边缘处连接到第二焊盘。 在第一方向进行切割，该第一方向大致与第二方向相反，抛光液在抛光机操作期间期望在抛光机的表面上移动，从而将第一和第二切割刃从第二方向倾斜到第二方向 抑制抛光液在第一和第二切割边缘之间通过。

公开(公告)号：US06454635B1

公开(公告)日：2002-09-24

申请号：US09633958

申请日：2000-08-08

申请人： Guoqiang David Zhang ,  Yun-Biao Xin ,  Henry F. Erk

发明人： Guoqiang David Zhang ,  Yun-Biao Xin ,  Henry F. Erk

IPC分类号： B24B100

CPC分类号： H01L21/68721 ,  B24B37/28 ,  H01L21/68764 ,  H01L21/68771 ,  Y10T29/4973

摘要： A method for repairing a wafer carrier after plural processing operations during which the carrier holds a plurality of semiconductor wafers in a processing apparatus which removes wafer material by at least one of abrading and chemical reaction. The wafer carrier has holes for receiving respective ones of the wafers and removable annular inserts for each hole. Each insert is receivable in a respective one of the holes for engaging a peripheral edge of one of the wafers. The thickness of the insert is reduced during the successive processing operations. The method includes removing at least one of the inserts from the wafer carrier and installing at least one new insert in the wafer carrier having a thickness substantially greater than a minimum thickness to extend the useful life of the wafer carrier and to improve the flatness and parallelism of surfaces of wafers processed using the wafer carrier.

摘要翻译： 一种用于在多个处理操作之后修复晶片载体的方法，其中载体在通过研磨和化学反应中的至少一种去除晶片材料的处理设备中保持多个半导体晶片。 晶片载体具有用于接收相应的晶片的孔和用于每个孔的可移除的环形插入件。 每个插入件可接收在相应的一个孔中，用于接合一个晶片的周边边缘。 在连续的处理操作期间，刀片的厚度减小。 该方法包括从晶片载体中去除至少一个插入物，并且在晶片载体中安装至少一个新的插入物，其厚度基本上大于最小厚度，以延长晶片载体的使用寿命并提高平坦度和平行度 使用晶片载体处理的晶片的表面。

公开(公告)号：US08828324B2

公开(公告)日：2014-09-09

申请号：US12977849

申请日：2010-12-23

申请人： Henry F. Erk

发明人： Henry F. Erk

IPC分类号： B01J8/24 ,  B01J8/44 ,  F23C10/20 ,  F27B15/10 ,  B01J8/18 ,  C01B33/107 ,  C01B33/03 ,  C01B33/031

CPC分类号： C01B33/10773 ,  B01J8/1827 ,  B01J8/44 ,  C01B33/03 ,  C01B33/031 ,  C01B33/1071 ,  F23C10/20 ,  F27B15/10

摘要： Fluidized bed reactor systems and distributors are disclosed as well as processes for producing polycrystalline silicon from a thermally decomposable silicon compound such as trichlorosilane. The processes generally involve reduction of silicon deposits on reactor walls during polycrystalline silicon production by use of a silicon tetrahalide.

摘要翻译： 公开了流化床反应器系统和分配器，以及从可热分解的硅化合物如三氯硅烷制备多晶硅的方法。 这些方法通常涉及通过使用四卤化硅在多晶硅生产期间减少反应器壁上的硅沉积物。

公开(公告)号：US20120164033A1

公开(公告)日：2012-06-28

申请号：US12978189

申请日：2010-12-23

申请人： Puneet Gupta ,  Henry F. Erk ,  Alexis Grabbe

发明人： Puneet Gupta ,  Henry F. Erk ,  Alexis Grabbe

IPC分类号： B01J19/08

CPC分类号： C01B33/043 ,  B01J8/18 ,  B01J19/087 ,  B01J2208/00946 ,  B01J2219/0803 ,  C01B33/107 ,  C01B33/1071 ,  C01B33/10742 ,  C25B1/006

摘要： Methods and systems for producing silane that use electrolysis to regenerate reactive components therein are disclosed. The methods and systems may be substantially closed-loop with respect to halogen, an alkali or alkaline earth metal and/or hydrogen.

摘要翻译： 公开了用于生产使用电解以再生其中的反应性组分的硅烷的方法和系统。 所述方法和系统可以相对于卤素，碱金属或碱土金属和/或氢基本上是闭环的。

公开(公告)号：US06189546B1

公开(公告)日：2001-02-20

申请号：US09473669

申请日：1999-12-29

申请人： David Zhang ,  Sharon Brumer ,  Henry F. Erk

发明人： David Zhang ,  Sharon Brumer ,  Henry F. Erk

IPC分类号： H01L21302

CPC分类号： H01L21/02024 ,  C09K3/1463

摘要： A multi-step polishing process for producing dopant-striation-free semiconductor wafers. The process includes polishing a surface of the wafer using a sodium stabilized colloidal silica slurry, an amine accelerant, and an alkaline etchant, polishing the surface of the wafer using a sodium stabilized colloidal silica slurry and an alkaline etchant which is substantially free of amine accelerants, and polishing the surface of the wafer using an ammonia stabilized colloidal silica slurry and an alkaline etchant which is substantially free of amine accelerants.

摘要翻译： 用于生产无掺杂物条的半导体晶片的多步抛光工艺。 该方法包括使用钠稳定的胶体二氧化硅浆料，胺促进剂和碱性蚀刻剂抛光晶片的表面，使用钠稳定的胶体二氧化硅浆料和基本上不含胺促进剂的碱性蚀刻剂抛光晶片的表面 ，并使用氨稳定的胶体二氧化硅浆料和基本上不含胺促进剂的碱性蚀刻剂抛光晶片的表面。

公开(公告)号：US20110158888A1

公开(公告)日：2011-06-30

申请号：US12977739

申请日：2010-12-23

申请人： Henry F. Erk

发明人： Henry F. Erk

IPC分类号： C01B33/02

CPC分类号： C01B33/10773 ,  B01J8/1827 ,  B01J8/44 ,  C01B33/03 ,  C01B33/031 ,  C01B33/1071 ,  F23C10/20 ,  F27B15/10

摘要： Fluidized bed reactor systems and distributors are disclosed as well as processes for producing polycrystalline silicon from a thermally decomposable silicon compound such as trichlorosilane. The processes generally involve reduction of silicon deposits on reactor walls during polycrystalline silicon production by use of a silicon tetrahalide.

摘要翻译： 公开了流化床反应器系统和分配器，以及从可热分解的硅化合物如三氯硅烷制备多晶硅的方法。 这些方法通常涉及通过使用四卤化硅在多晶硅生产期间减少反应器壁上的硅沉积物。

公开(公告)号：US20110158857A1

公开(公告)日：2011-06-30

申请号：US12977849

申请日：2010-12-23

申请人： Henry F. Erk

发明人： Henry F. Erk

IPC分类号： B01J8/18 ,  B01J19/00

CPC分类号： C01B33/10773 ,  B01J8/1827 ,  B01J8/44 ,  C01B33/03 ,  C01B33/031 ,  C01B33/1071 ,  F23C10/20 ,  F27B15/10

摘要： Fluidized bed reactor systems and distributors are disclosed as well as processes for producing polycrystalline silicon from a thermally decomposable silicon compound such as trichlorosilane. The processes generally involve reduction of silicon deposits on reactor walls during polycrystalline silicon production by use of a silicon tetrahalide.

摘要翻译： 公开了流化床反应器系统和分配器，以及从可热分解的硅化合物如三氯硅烷制备多晶硅的方法。 这些方法通常涉及通过使用四卤化硅在多晶硅生产期间减少反应器壁上的硅沉积物。

公开(公告)号：US06227944B1

公开(公告)日：2001-05-08

申请号：US09276278

申请日：1999-03-25

申请人： Yun-Biao Xin ,  Ichiro Yoshimura ,  Henry F. Erk ,  Ralph V. Vogelgesang ,  Stephen Wayne Hensiek

发明人： Yun-Biao Xin ,  Ichiro Yoshimura ,  Henry F. Erk ,  Ralph V. Vogelgesang ,  Stephen Wayne Hensiek

IPC分类号： B24B100

CPC分类号： B24C3/322

摘要： A method for processing a semiconductor wafer sliced from a single-crystal ingot comprises subjecting the front and back surfaces of the wafer to a lapping operation to reduce the thickness of the wafer and to remove damage caused during slicing of the wafer. The wafer is then subjected to an etching operation to further reduce the thickness of the wafer and to further remove damage remaining after the lapping operation. The wafer is subsequently subjected to a double-side polishing operation to uniformly remove damage from the front and back surfaces caused by the lapping and etching operations, thereby improving the flatness of the wafer and leaving polished front and back surfaces. Finally, the back surface of the wafer is subjected to a back surface damaging operation in which damage is induced in the back surface of the wafer while the front surface is substantially protected against being damaged or roughened. A pressure jetting machine of the present invention includes a wafer holder that supports the wafer in the pressure jetting machine such that the back surface of the wafer is exposed to the jetted abrasive slurry while the front surface is supported by the holder in spaced relationship above a support surface of the machine to inhibit damaging engagement between the support surface and the front surface of the wafer.

摘要翻译： 用于处理从单晶锭切片的半导体晶片的方法包括使晶片的前表面和后表面进行研磨操作以减小晶片的厚度并消除晶片切割期间引起的损伤。 然后对晶片进行蚀刻操作，以进一步减小晶片的厚度，并进一步消除研磨操作后剩余的损伤。 随后对晶片进行双面抛光操作，以均匀地去除由研磨和蚀刻操作引起的前表面和背面的损伤，从而提高晶片的平坦度并留下抛光的前后表面。 最后，晶片的背面受到后表面的损伤作用，其中在晶片背面引起损伤，同时基本上保护了前表面免受损坏或粗糙化。 本发明的压力喷射机包括晶片保持器，该晶片保持器在压力喷射机中支撑晶片，使得晶片的背面暴露于喷射的研磨浆料，同时前表面以保持器的间隔关系支撑在一个 机器的支撑表面以抑制支撑表面和晶片前表面之间的损坏接合。

公开(公告)号：US6135863A

公开(公告)日：2000-10-24

申请号：US295127

申请日：1999-04-20

申请人： David Zhang ,  Ralph V. Vogelgesang ,  Henry F. Erk

发明人： David Zhang ,  Ralph V. Vogelgesang ,  Henry F. Erk

IPC分类号： B24B53/007 ,  B24B53/017 ,  B24B57/02 ,  H01L21/304 ,  B24B1/00 ,  B24B7/00

CPC分类号： B24B53/017 ,  B24B57/02

摘要： A method of conditioning a polishing pad for use with a polishing machine. The method includes installing the polishing pad to be conditioned on the polishing machine's platen and applying a conditioning load force to the pad. In addition, the method includes supplying a slurry to the pad at a conditioning flow rate. The conditioning load force is greater than a polishing load force applied during a conventional wafer polishing cycle to compress the pad and the conditioning flow rate is greater than a polishing flow rate at which the slurry is supplied during the wafer polishing cycle to load the pad's pores with abrasive material. The method also includes the step of operating the polishing machine for a conditioning cycle while applying the conditioning load force and supplying the slurry at the conditioning flow rate. In this manner, the polishing pad is conditioned for use with the polishing machine for subsequently polishing the semiconductor wafers with the conditioned pad.

摘要翻译： 调整用于抛光机的抛光垫的方法。 该方法包括将待调理的抛光垫安装在抛光机的压板上并对衬垫施加调节负载力。 此外，该方法包括以调节流量向浆料供应浆料。 调节负载力大于在常规晶片抛光循环期间施加的用于压缩衬垫的抛光负载力，并且调节流速大于在晶片抛光循环期间供应浆料以加载垫的孔的抛光流速 用磨料。 该方法还包括在施加调节负载力并在调节流量下供给浆料的同时操作抛光机用于调节循环的步骤。 以这种方式，抛光垫被调理用于抛光机，随后用调节垫抛光半导体晶片。

公开(公告)号：US08821825B2

公开(公告)日：2014-09-02

申请号：US12978209

申请日：2010-12-23

申请人： Puneet Gupta ,  Henry F. Erk ,  Alexis Grabbe

发明人： Puneet Gupta ,  Henry F. Erk ,  Alexis Grabbe

IPC分类号： C01B33/04

CPC分类号： C01B33/029 ,  C01B33/043 ,  C25B1/003 ,  C25C3/02

摘要： Methods and systems for producing silane that use electrolysis to regenerate reactive components therein are disclosed. The methods and systems may be substantially closed-loop with respect to halogen, an alkali or alkaline earth metal and/or hydrogen.

摘要翻译： 公开了用于生产使用电解以再生其中的反应性组分的硅烷的方法和系统。 所述方法和系统可以相对于卤素，碱金属或碱土金属和/或氢基本上是闭环的。