公开(公告)号：US20120206838A1

公开(公告)日：2012-08-16

申请号：US13454846

申请日：2012-04-24

申请人： Yoshihiko FUJI ,  Hideaki FUKUZAWA ,  Hiromi YUASA

发明人： Yoshihiko FUJI ,  Hideaki FUKUZAWA ,  Hiromi YUASA

IPC分类号： G11B5/39 ,  G11C11/16

CPC分类号： G11B5/3983 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/398 ,  G11C11/161 ,  H01F10/187 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3263 ,  H01F10/3272 ,  Y10T428/1121

摘要： An example magnetoresistive element includes a first magnetic layer whose magnetization direction is substantially pinned toward one direction; a second magnetic layer whose magnetization direction is changed in response to an external magnetic field; and a spacer layer. At least one of the first magnetic layer and the second magnetic layer includes a magnetic compound layer including a magnetic compound that is expressed by M1aM2bOc (where 5≦a≦68, 10≦b≦73, and 22≦c≦85). M1 is at least one element selected from the group consisting of Co, Fe, and Ni. M2 is at least one element selected from the group consisting of Ti, V, and Cr.

摘要翻译： 示例性磁阻元件包括其磁化方向基本上朝向一个方向固定的第一磁性层; 其磁化方向响应于外部磁场而改变的第二磁性层; 和间隔层。 第一磁性层和第二磁性层中的至少一个包括由M1aM2bOc（其中5和nlE; a＆nlE; 68,10和nlE; b＆nlE; 73和22＆nlE; c＆nlE; 85）表示的磁性化合物的磁性化合物层。 M1是选自Co，Fe和Ni中的至少一种元素。 M2是选自Ti，V和Cr中的至少一种元素。

公开(公告)号：US20130170669A1

公开(公告)日：2013-07-04

申请号：US13536002

申请日：2012-06-28

申请人： Hideaki FUKUZAWA ,  Tatsuya Ohguro ,  Akihiro Kojima ,  Yoshiaki Sugizaki ,  Mariko Takayanagi ,  Yoshihiko Fuji ,  Akio Hori ,  Michiko Hara

发明人： Hideaki FUKUZAWA ,  Tatsuya Ohguro ,  Akihiro Kojima ,  Yoshiaki Sugizaki ,  Mariko Takayanagi ,  Yoshihiko Fuji ,  Akio Hori ,  Michiko Hara

IPC分类号： G01L9/00 ,  B81C1/00 ,  H04R1/08

CPC分类号： B81C1/00158 ,  B81B2201/0264 ,  B81C1/00246 ,  B81C2203/0771 ,  G01L9/0042 ,  H04R1/08 ,  H04R19/005 ,  H04R19/04 ,  H04R31/00

摘要： According to one embodiment, a strain and pressure sensing device includes a semiconductor circuit unit and a sensing unit. The semiconductor circuit unit includes a semiconductor substrate and a transistor. The transistor is provided on a semiconductor substrate. The sensing unit is provided on the semiconductor circuit unit, and has space and non-space portions. The non-space portion is juxtaposed with the space portion. The sensing unit further includes a movable beam, a strain sensing element unit, and first and second buried interconnects. The movable beam has fixed and movable portions, and includes first and second interconnect layers. The fixed portion is fixed to the non-space portion. The movable portion is separated from the transistor and extends from the fixed portion into the space portion. The strain sensing element unit is fixed to the movable portion. The first and second buried interconnects are provided in the non-space portion.

公开(公告)号：US20130079648A1

公开(公告)日：2013-03-28

申请号：US13468511

申请日：2012-05-10

申请人： Hideaki FUKUZAWA ,  Osamu Nishimura ,  Takehiko Suzuki ,  Michiko Hara ,  Yoshihiko Fuji

发明人： Hideaki FUKUZAWA ,  Osamu Nishimura ,  Takehiko Suzuki ,  Michiko Hara ,  Yoshihiko Fuji

IPC分类号： A61B5/024

CPC分类号： A61B5/02141 ,  A61B5/02125 ,  A61B5/6832 ,  A61B2562/0223

摘要： According to one embodiment, a pulse wave velocity measuring device includes a first sensor, a second sensor, a base body and a calculation unit. The first sensor is configured to sense a pulse wave propagating through an interior of a vessel. The second sensor is separated from the first sensor and is configured to sense the pulse wave. The base body is configured to hold the first sensor and the second sensor and regulate a distance between the first sensor and the second sensor. The calculation unit is configured to derive a difference between a time of the sensing of the pulse wave by the first sensor and a time of the sensing of the pulse wave by the second sensor.

摘要翻译： 根据一个实施例，脉搏波速度测量装置包括第一传感器，第二传感器，基体和计算单元。 第一传感器被配置为感测通过血管内部传播的脉波。 第二传感器与第一传感器分离并被配置为感测脉搏波。 基体构造成保持第一传感器和第二传感器并调节第一传感器和第二传感器之间的距离。 计算单元被配置为导出由第一传感器检测脉搏波的时间与第二传感器对脉搏波的感测时间之间的差异。

公开(公告)号：US20110049090A1

公开(公告)日：2011-03-03

申请号：US12872820

申请日：2010-08-31

申请人： Yoshiyuki KAMATA ,  Hiromi YUASA ,  Shuichi MURAKAMI ,  Hideaki FUKUZAWA ,  Michiko HARA ,  Yoshihiko FUJI ,  Masatoshi SAKURAI

发明人： Yoshiyuki KAMATA ,  Hiromi YUASA ,  Shuichi MURAKAMI ,  Hideaki FUKUZAWA ,  Michiko HARA ,  Yoshihiko FUJI ,  Masatoshi SAKURAI

IPC分类号： G11B5/84

CPC分类号： G11B5/855

摘要： According to one embodiment, a method of manufacturing a magnetic recording medium includes forming a magnetic recording layer, an etching protection layer, and an adhesion layer on a substrate, applying a resist on the adhesion layer, transferring patterns of protrusions and recesses on the resist by imprinting to form a resist pattern, patterning the adhesion layer by using the resist pattern as a mask, patterning the etching protection layer by using the resist pattern as a mask, etching the magnetic recording layer by using patterns of the adhesion layer and the etching protection layer as masks to form patterns of protrusions and recesses of the magnetic recording layer and removing the pattern of the adhesion layer, stripping the pattern of the etching protection layer, and exposing the patterns of protrusions and recesses of the magnetic recording layer to a non-ionized reducing gas.

摘要翻译： 根据一个实施例，制造磁记录介质的方法包括在基板上形成磁记录层，蚀刻保护层和粘合层，在粘合层上涂布抗蚀剂，在抗蚀剂上转印凹凸图案 通过印刷形成抗蚀剂图案，通过使用抗蚀剂图案作为掩模对粘合层进行图案化，通过使用抗蚀剂图案作为掩模对蚀刻保护层进行图案化，通过使用粘合层和蚀刻的图案蚀刻磁记录层 保护层作为掩模以形成磁记录层的突起和凹陷的图案并去除粘附层的图案，剥离蚀刻保护层的图案，以及将磁记录层的突起和凹陷的图案暴露于非磁性层 - 还原气体。