利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

57 条记录 (耗时 0.042 秒)

    Apparatus for and method of preparing pattern data of electronic part
    3.
    发明授权
    Apparatus for and method of preparing pattern data of electronic part 失效
    电子部件图案数据的制作方法及方法

    公开(公告)号：US06675368B2

    公开(公告)日：2004-01-06

    申请号：US09962454

    申请日：2001-09-26

    申请人： Mariko Takayanagi ,  Shunko Magoshi ,  Tatsuya Ohguro

    发明人： Mariko Takayanagi ,  Shunko Magoshi ,  Tatsuya Ohguro

    IPC分类号： G06F1750

    CPC分类号： H01J37/3026 ,  H01J2237/31764 ,  Y10T428/24802

    摘要： A method divides a layout area of an electronic part into sections, designs patterns according to circuit data of de electronic part, and draws the patterns in the layout area section by section so that the patterns in the sections may collectively form the electronic part. The method detects, among the patterns, any violation pattern that may cause a characteristic failure in the electronic part due to a section-to section connection error. Such violation pattern has a size L smaller than a threshold “k*La” where La is a section-to-section connection allowance and k is a coefficient. Also provided is an apparatus for executing the method.

    摘要翻译： 一种方法将电子部件的布局区域划分为部分，根据电子部件的电路数据设计图案，并逐段绘制布局区域中的图案，使得部分中的图案可以共同形成电子部件。 该方法在模式之中检测到可能由于段到段连接错误而导致电子部件中的特征故障的任何违规模式。 这种违反模式的尺寸L小于阈值“k * La”，其中La是截面连接容限，k是系数。 还提供了一种用于执行该方法的装置。

    Semiconductor device using MEMS technology
    4.
    发明授权
    Semiconductor device using MEMS technology 有权
    半导体器件采用MEMS技术

    公开(公告)号：US07582940B2

    公开(公告)日：2009-09-01

    申请号：US11341910

    申请日：2006-01-30

    申请人： Tatsuya Ohguro

    发明人： Tatsuya Ohguro

    IPC分类号： H01L27/20 ,  H01L41/08

    CPC分类号： B81C1/00333 ,  B81C2203/0136 ,  B81C2203/0145

    摘要： A semiconductor device using a MEMS technology according to an example of the present invention comprises a cavity, a lower electrode positioned below the cavity, a moving part positioned in the cavity, an upper electrode coupled with the moving part, a film which covers an upper part of the cavity and has an opening, and a material which closes the opening and seals the cavity.

    摘要翻译： 使用根据本发明的示例的MEMS技术的半导体器件包括腔，位于腔下方的下电极，位于空腔中的移动部分，与移动部件耦合的上电极，覆盖上部 空腔的一部分并具有开口，以及封闭开口并密封空腔的材料。

    Semiconductor device and method of manufacturing the same
    5.
    发明授权
    Semiconductor device and method of manufacturing the same 失效
    半导体装置及其制造方法

    公开(公告)号：US07176529B2

    公开(公告)日：2007-02-13

    申请号：US10847314

    申请日：2004-05-18

    申请人： Tatsuya Ohguro

    发明人： Tatsuya Ohguro

    IPC分类号： H01L23/62

    CPC分类号： H01L27/0274

    摘要： A semiconductor device includes a semiconductor substrate having a resistivity of at least 30 Ω·cm, a first MISFET formed on the semiconductor substrate to function as a protective element, and a second MISFET protected by the first MISFET.

    摘要翻译： 半导体器件包括具有至少30Ω·cm的电阻率的半导体衬底，形成在半导体衬底上用作保护元件的第一MISFET以及由第一MISFET保护的第二MISFET。

    Semiconductor wafer, semiconductor device and manufacturing method of semiconductor device
    6.
    发明申请
    Semiconductor wafer, semiconductor device and manufacturing method of semiconductor device 失效
    半导体晶片，半导体器件及半导体器件的制造方法

    公开(公告)号：US20060261410A1

    公开(公告)日：2006-11-23

    申请号：US11399603

    申请日：2006-04-07

    申请人： Tatsuya Ohguro

    发明人： Tatsuya Ohguro

    IPC分类号： H01L27/12

    CPC分类号： H01L21/84 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor wafer includes a semiconductor bulk; a first insulating layer formed on the semiconductor bulk; a first semiconductor layer formed on the first insulating layer; a second insulating layer formed on the first semiconductor layer; and a second semiconductor layer formed on the second insulating layer.

    摘要翻译： 半导体晶片包括半导体本体; 形成在半导体本体上的第一绝缘层; 形成在所述第一绝缘层上的第一半导体层; 形成在所述第一半导体层上的第二绝缘层; 以及形成在所述第二绝缘层上的第二半导体层。

    Variable-capacitance element, variable-capacitance device, and portable phone including variable-capacitance device
    7.
    发明申请
    Variable-capacitance element, variable-capacitance device, and portable phone including variable-capacitance device 有权
    可变电容元件，可变电容器件以及包括可变电容器件的便携式电话

    公开(公告)号：US20060209491A1

    公开(公告)日：2006-09-21

    申请号：US11137794

    申请日：2005-05-26

    申请人： Tamio Ikehashi ,  Tatsuya Ohguro ,  Mie Matsuo

    发明人： Tamio Ikehashi ,  Tatsuya Ohguro ,  Mie Matsuo

    IPC分类号： H01G5/00

    CPC分类号： H01G5/16 ,  H01G5/18

    摘要： A variable-capacitance element includes: a first electrode and a second electrode which are fixed on a substrate with a spacing; a movable electrode; an actuator which is supported on a supporting portion provided on the substrate to drive the movable electrode. The movable electrode is put in an electrically connecting state with the second electrode, when the movable electrode is driven to a first position by the actuator, and the movable electrode is put in an electrically non-connected state with the second electrode, when the movable electrode is driven to a second position by the actuator. The movable electrode is constituted to be always put in an electrically non-connected state with the first electrode.

    摘要翻译： 可变电容元件包括：以间隔固定在基板上的第一电极和第二电极; 可动电极; 支撑在设置在基板上的支撑部上以驱动可动电极的致动器。 当可动电极通过致动器驱动到第一位置时，可动电极与第二电极处于电连接状态，并且可移动电极与第二电极处于与电不连接的状态，当可移动电极 电极被致动器驱动到第二位置。 可动电极构成为与第一电极总是处于非连接状态。

    Semiconductor device having spiral-shaped inductor
    8.
    发明申请
    Semiconductor device having spiral-shaped inductor 审中-公开
    具有螺旋形电感器的半导体器件

    公开(公告)号：US20060163694A1

    公开(公告)日：2006-07-27

    申请号：US11315598

    申请日：2005-12-23

    申请人： Tatsuya Ohguro

    发明人： Tatsuya Ohguro

    IPC分类号： H01L29/00

    CPC分类号： H01L27/08 ,  H01L23/5227 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An element isolation region is formed in a surface region of a semiconductor substrate. A spiral-shaped inductor is formed above the element isolation region. A conductive region to which a constant potential is applied is formed inside the inner circumference of the inductor.

    摘要翻译： 元件隔离区域形成在半导体衬底的表面区域中。 螺旋形电感器形成在元件隔离区域上方。 在电感器的内周形成有施加恒定电位的导电区域。