利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

76 条记录 (耗时 0.044 秒)

    Method of manufacturing magnetoresistive element
    4.
    发明授权
    Method of manufacturing magnetoresistive element 失效
    制造磁阻元件的方法

    公开(公告)号：US08685491B2

    公开(公告)日：2014-04-01

    申请号：US13186389

    申请日：2011-07-19

    申请人： Akihiko Takeo ,  Yoshihiko Fuji ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami ,  Hideaki Fukuzawa

    发明人： Akihiko Takeo ,  Yoshihiko Fuji ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami ,  Hideaki Fukuzawa

    IPC分类号： G11B5/48

    CPC分类号： G11B5/3903 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3983 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/303 ,  H01F41/325 ,  H01L43/12 ,  Y10T428/1129

    摘要： According to one embodiment, a method of manufacturing a magnetoresistive element includes a layered structure and a pair of electrodes, the layered structure including a cap layer, a magnetization pinned layer, a magnetization free layer, a spacer layer and a functional layer provided in the magnetization pinned layer, between the magnetization pinned layer and the spacer layer, between the spacer layer and the magnetization free layer, in the magnetization free layer, or between the magnetization free layer and the cap layer and including an oxide, the method including forming a film including a base material of the functional layer, performing an oxidation treatment on the film using a gas containing oxygen in a form of at least one selected from the group consisting of molecule, ion, plasma and radical, and performing a reduction treatment using a reducing gas on the film after the oxidation treatment.

    摘要翻译： 根据一个实施例，制造磁阻元件的方法包括层状结构和一对电极，所述层叠结构包括盖层，磁化固定层，磁化自由层，间隔层和功能层 在磁化被钉扎层和间隔层之间，在间隔层和磁化自由层之间，在磁化自由层中，或在磁化自由层和覆盖层之间并包括氧化物的磁化钉扎层，该方法包括形成 膜，其包括功能层的基材，使用含有选自分子，离子，等离子体和自由基中的至少一种形式的含氧气体，对膜进行氧化处理，并使用 在氧化处理后还原气膜。

    MAGNETO-RESISTANCE EFFECT DEVICE, AND MAGNETIC RECORDER
    6.
    发明申请
    MAGNETO-RESISTANCE EFFECT DEVICE, AND MAGNETIC RECORDER 审中-公开
    磁阻效应器件和磁记录器

    公开(公告)号：US20120229936A1

    公开(公告)日：2012-09-13

    申请号：US13481317

    申请日：2012-05-25

    申请人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami

    发明人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami

    IPC分类号： G11B5/39 ,  H01L29/82

    CPC分类号： G11B5/39 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3906 ,  G11B5/398 ,  G11B5/3983 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/325 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    摘要： According to one embodiment, a magneto-resistance effect device includes: a multilayer structure having a cap layer; a magnetization pinned layer; a magnetization free layer provided between the cap layer and the magnetization pinned layer; a spacer layer provided between the magnetization pinned layer and the magnetization free layer; a function layer which is provided in the magnetization pinned layer, between the magnetization pinned layer and the spacer layer, between the spacer layer and the magnetization free layer, in the magnetization free layer, or between the magnetization free layer and the cap layer, the function layer having oxide containing at least one element selected from Zn, In, Sn and Cd, and at least one element selected from Fe, Co and Ni; and a pair of electrodes for applying a current perpendicularly to a film plane of the multilayer structure.

    摘要翻译： 根据一个实施例，磁阻效应器件包括：具有盖层的多层结构; 磁化钉扎层; 设置在所述盖层和所述磁化固定层之间的无磁化层; 设置在磁化固定层和无磁化层之间的间隔层; 设置在磁化被钉扎层，磁化被钉扎层和间隔层之间，在间隔层和无磁化层之间，在磁化自由层中，或在磁化自由层和盖层之间的功能层， 具有含有选自Zn，In，Sn和Cd中的至少一种元素的氧化物的功能层和选自Fe，Co和Ni中的至少一种元素; 以及用于垂直于多层结构的膜平面施加电流的一对电极。

    STRAIN SENSOR ELEMENT AND BLOOD PRESSURE SENSOR
    7.
    发明申请
    STRAIN SENSOR ELEMENT AND BLOOD PRESSURE SENSOR 有权
    应变传感器元件和血压传感器

    公开(公告)号：US20120079887A1

    公开(公告)日：2012-04-05

    申请号：US13110392

    申请日：2011-05-18

    申请人： Alexander Devin Giddings ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami

    发明人： Alexander Devin Giddings ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami

    IPC分类号： G01B7/16

    CPC分类号： A61B5/021 ,  A61B5/02108 ,  G01B7/24 ,  G01L1/125

    摘要： A strain sensor element comprises a laminated film which has a magnetic free layer, a spacer layer, and a magnetic reference layer. The free layer has a variable magnetization direction and a out-of-plane magnetization direction. The reference layer has a variable magnetization direction which is pinned more strongly than the magnetization of the free layer. The spacer layer provided between the free layer and the reference layer. A pair of electrodes is provided with a plane of the laminated film. A substrate is provided with either of the pair electrodes and can be strained. The rotation angle of the magnetization of the free layer is different from the rotation angle of the magnetization of the reference layer when the substrate is distorted. Electrical resistance is changed depending on the magnetization angle between the free layer and the reference layer, which allows the element to operate as a strain sensor.

    摘要翻译： 应变传感器元件包括具有无磁性层，间隔层和磁性参考层的层压膜。 自由层具有可变的磁化方向和面外磁化方向。 参考层具有可变的磁化方向，该自由层的磁化强度比自由层的磁化强。 间隔层设置在自由层和参考层之间。 一对电极设置有层叠膜的平面。 基板设置有对电极中的任一个并且可以变形。 当衬底失真时，自由层的磁化的旋转角度与参考层的磁化的旋转角度不同。 电阻根据自由层和参考层之间的磁化角度而改变，这允许元件作为应变传感器工作。

    Magneto-resistance effect element, and method for manufacturing the same
    9.
    发明授权
    Magneto-resistance effect element, and method for manufacturing the same 有权
    磁阻效应元件及其制造方法

    公开(公告)号：US08379351B2

    公开(公告)日：2013-02-19

    申请号：US12073895

    申请日：2008-03-11

    申请人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Kunliang Zhang ,  Min Li ,  Michiko Hara ,  Yoshinari Kurosaki

    发明人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Kunliang Zhang ,  Min Li ,  Michiko Hara ,  Yoshinari Kurosaki

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3906 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/39 ,  G11B5/3909 ,  G11B2005/3996 ,  H01L43/08 ,  Y10S977/943

    摘要： An example magneto-resistance effect element includes a fixed magnetization layer of which a magnetization is substantially fixed in one direction; a free magnetization layer of which a magnetization is rotated in accordance with an external magnetic field and which is formed opposite to the fixed magnetization layer; and a spacer layer including a current confining layer with an insulating layer and a conductor to pass a current through the insulating layer in a thickness direction thereof and which is located between the fixed magnetization layer and the free magnetization layer. A thin film layer is located on a side opposite to the spacer layer relative to the free magnetization layer and a functional layer containing at least one element selected from the group consisting of Si, Mg, B, Al is formed in or on at least one of the fixed magnetization layer, the free magnetization layer and the thin film layer.

    摘要翻译： 一个示例性磁阻效应元件包括一个固定的磁化层，其磁化强度基本上固定在一个方向上; 自由磁化层，其磁化根据外部磁场而旋转并与固定磁化层相对形成; 以及间隔层，其包括具有绝缘层的电流限制层和导体，以使电流在其厚度方向上穿过绝缘层，并且位于固定磁化层和自由磁化层之间。 薄膜层相对于自由磁化层位于与间隔层相反的一侧，并且包含至少一种选自Si，Mg，B，Al的元素的功能层形成在至少一个 的固定磁化层，自由磁化层和薄膜层。

    Magnetoresistive element, magnetic head assembly, magnetic recording/reproducing apparatus, memory cell array, and manufacturing method of magnetoresistive element
    10.
    发明授权
    Magnetoresistive element, magnetic head assembly, magnetic recording/reproducing apparatus, memory cell array, and manufacturing method of magnetoresistive element 有权
    磁阻元件，磁头组件，磁记录/再现装置，存储单元阵列和磁阻元件的制造方法

    公开(公告)号：US08213130B1

    公开(公告)日：2012-07-03

    申请号：US13234356

    申请日：2011-09-16

    申请人： Yoshihiko Fuji ,  Michiko Hara ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Shuichi Murakami

    发明人： Yoshihiko Fuji ,  Michiko Hara ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Shuichi Murakami

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932 ,  G11B5/3983 ,  G11B2005/3996 ,  G11C11/161

    摘要： A magnetoresistive element includes a first electrode, a second electrode, a first magnetic layer, a second magnetic layer, a spacer layer, an oxide layer, and a metal layer. The oxide layer is provided between the first electrode and the first magnetic layer, or within the first magnetic layer, or between the first magnetic layer and the spacer layer, or within the spacer layer, or between the spacer layer and the second magnetic layer, or within the second magnetic layer, or between the second magnetic layer and the second electrode. The oxide layer includes at least one element of Zn, In, Sn, and Cd, and at least one element of Fe, Co, and Ni. The metal layer includes at least one element of Zn, In, Sn, and Cd by not less than 5 at % and not more than 80 at %, and at least one element of Fe, Co, and Ni.

    摘要翻译： 磁阻元件包括第一电极，第二电极，第一磁性层，第二磁性层，间隔层，氧化物层和金属层。 氧化物层设置在第一电极和第一磁性层之间，或在第一磁性层内，或第一磁性层与间隔层之间，或间隔层内，或间隔层与第二磁性层之间， 或在第二磁性层内，或在第二磁性层和第二电极之间。 氧化物层包括Zn，In，Sn和Cd中的至少一种元素，以及Fe，Co和Ni中的至少一种元素。 金属层包括Zn，In，Sn和Cd中的至少一种元素，不小于5原子％且不大于80原子％，以及至少一种Fe，Co和Ni元素。