摘要:
A partition member is provided with an elastic body for absorbing hydraulic pressure fluctuation of the primary liquid chamber and a frame member for supporting an outer circumferential portion of the elastic body while aiming to prevent the rotation of the elastic body. A relief aperture communicating between the primary liquid chamber and the secondary liquid chamber is located on the outer circumferential side in the elastic body supporting region of the frame member. A relief valve for opening and closing the relief aperture is integrally formed on the outer circumferential side of the elastic body. The relief valve is formed of a pair of right and left relief valves. A width across flat sections are formed on a thick-walled outer circumferential section of the elastic body which is located between the right and left relief valves, such as to serve as a detent means.
摘要:
Disclosed is a process for producing a polarizing plate which is transparent, has resistance against high temperatures and high humidity, and is significantly improved in brittleness. Specifically disclosed is a process for producing a polarizing plate comprising two polarizing plate protective films and a polarizer intercalated between the polarizing plate protective films, which is characterized in that at least one of the two polarizing plate protective films is an acrylic film comprising an acrylic resin (A) and a cellulose ester resin (B) at a ratio of 85:15 to 55:45 by mass, and the acrylic film is drawn in at least one direction at a draw ratio of 10 to 150% inclusive and is subsequently bonded to the polarizer with an aqueous adhesive agent.
摘要:
Disclosed are a retardation film, a method for producing the retardation film, a polarizing plate comprising the retardation film, and a liquid crystal display comprising the polarizing plate. Specifically disclosed is a method for producing a retardation film, which comprises an extrusion step for extruding a composition containing a thermoplastic resin and having a temperature of To [° C.] from a die; a cooling step for cooling a film extruded from the die and having a glass transition temperature of Tg [° C.] to a temperature Ta [° C.]; a heating step for heating the cooled film to a temperature Tb [° C.] at least once; and a stretching step for cooling the heated film to a temperature Tc [° C.] and then stretching the cooled film in the width direction.
摘要:
An optical film manufactured by stretching a cellulose ester comprising needle-shaped particles and an additive selected from the group consisting of a polyester, a polyalcohol ester, a polycarboxylic acid ester and a polymer obtained by polymerizing an ethylenically unsaturated monomer, wherein the needle-shaped particles exhibit negative birefringency in a stretching direction of the optical film.
摘要:
An optical film comprising a resin and birefringent needle-shaped particles, the resin being added with the birefringent needle-shaped particles and being stretched to form the optical film (hereafter designated as Optical Film A), wherein (i) the resin exhibits a positive birefringence along a stretching direction when stretched; (ii) the birefringent needle-shaped particle exhibits a negative birefringence along the stretching direction of the optical film; and (iii) the optical film satisfies the following relationships: ny(a)
摘要:
In a semiconductor device, pining regions 105 are disposed along the junction portion of a drain region 102 and a channel forming region 106 locally in a channel width direction. With this structure, because the spread of a depletion layer from a drain side is restrained by the pining regions 105, a short-channel effect can be restrained effectively. Also, because a passage through which carriers move is ensured, high mobility can be maintained.
摘要:
To provide a semiconductor device that can effectively suppress the short channel effect without deterioration of carrier migration, an impurity ion is added from a direction of the axis with respect to a silicon substrate on forming a punch through stopper under the gate electrode. In this invention, because the addition of the impurity is conducted by utilizing the principal of channeling, the impurity can be added a small amount of scattering suppressing damages on the surface of the silicon substrate. A channel forming region having an extremely small impurity concentration and substantially no crystallinity disorder is formed.
摘要:
In a semiconductor device, pining regions 105 are disposed along the junction portion of a drain region 102 and a channel forming region 106 locally in a channel width direction. With this structure, because the spread of a depletion layer from a drain side is restrained by the pining regions 105, a short-channel effect can be restrained effectively. Also, because a passage through which carriers move is ensured, high mobility can be maintained.
摘要:
An adhesive composition is disclosed, comprising an ethylenic copolymer comprising a repeating unit derived from an ethylenically unsaturated monomer containing an active methylene group and at least a repeating unit derived from an ethylenically unsaturated monomer, and a copolyester containing, as a copolymerizing component, a repeating unit derived from a dicarboxylic acid containing a sulfonate group or a repeating unit derived from a diol containing a sulfonate group.
摘要:
The invention provides a peripheral drive circuit integrated active matrix LCD device in which thin-film transistors have different characteristics optimized for individual circuits of the active matrix LCD device. A pixel matrix portion includes thin-film transistors, each having offset gate regions 134 and 136 produced in a non-self-alignment manner, an n-channel driver portion includes thin-film transistors, each having lightly-doped regions 128 and 130 produced in a combination of the non-self-alignment manner and a self-alignment manner, and a p-channel driver portion includes thin-film transistors produced in a self-alignment manner. This construction makes it possible to arrange the thin-film transistors having characteristics required by the individual circuits.