Analyte treatment apparatus
    11.
    发明授权
    Analyte treatment apparatus 有权
    分析物处理装置

    公开(公告)号:US08282881B2

    公开(公告)日:2012-10-09

    申请号:US12668014

    申请日:2008-07-03

    申请人: Kenji Takahashi

    发明人: Kenji Takahashi

    IPC分类号: G01N21/00

    摘要: An analyte treatment apparatus comprising liquid chemical tanks storing liquid chemicals; and a treatment unit carrying out a treatment by supplying the liquid chemicals, so as to facilitate observation. The liquid chemical tanks are made of resin and housed inside a housing unit. Openings are formed in the housing unit. Light projecting means is provided outside of the treatment unit and projects light into each liquid chemical tank through the opening of the housing unit. A colored transparent door is provided to the housing unit and located at the other side with respect to a specific side of the liquid chemical tanks from which light diffusely reflected at the one side and the opposite side of the liquid chemical tank or in the liquid chemical tank can be visually checked, so as to visually check the reflected light. A control unit controls ON-OFF switching of the light projecting means.

    摘要翻译: 一种分析物处理装置,包括储存液体化学药品的液体化学药液罐; 以及通过供给液体化学品进行处理的处理单元,以便于观察。 液体化学容器由树脂制成并容纳在壳体单元内。 开口形成在壳体单元中。 光投射装置设置在处理单元的外部,并通过壳体单元的开口将光投射到每个液体化学罐中。 一个彩色的透明门被提供到壳体单元,并且位于液体化学容器的特定侧的另一侧,在该液体化学容器的特定侧,光在液体化学品容器的一侧和相对侧或在液体化学品中漫射 罐可以目视检查,以便目视检查反射光。 控制单元控制投光装置的ON-OFF切换。

    ESTIMATION APPARATUS AND ESTIMATION METHOD
    12.
    发明申请
    ESTIMATION APPARATUS AND ESTIMATION METHOD 有权
    估计装置和估计方法

    公开(公告)号:US20120221267A1

    公开(公告)日:2012-08-30

    申请号:US13508072

    申请日:2010-10-05

    IPC分类号: G01R31/36

    摘要: An estimation apparatus has a controller which estimates an internal reaction of a secondary battery. The controller calculates a voltage drop amount due to an internal resistance of the secondary battery by using an expression (I): Δ   V = RT α   β   F  arc   sinh ( - R r  I RT α   β   F ) - R d  I ( I ) where ΔV represents the voltage drop amount, R represents a gas constant, T represents a temperature, α represents an oxidation reduction transfer coefficient (α=0.5) of an electrode, β represents a correction coefficient (0

    摘要翻译: 估计装置具有估计二次电池的内部反应的控制器。 控制器使用表达式(I)计算由于二次电池的内部电阻引起的电压降量:&Dgr; 冥想V = RTαared&bgr (D)R D I(I)其中&Dgr; V表示电压降量,R表示气体常数,T表示气体常数, a表示电极的氧化还原转移系数(α= 0.5),bgr表示。 表示校正系数(0 <&bgr; <1),F表示法拉第常数,I表示放电电流,Rr表示包含在内部电阻中的反应电阻的分量,Rd表示直流电阻的分量 纳入内部阻力。

    SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR SUBSTRATE BONDING METHOD
    13.
    发明申请
    SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR SUBSTRATE BONDING METHOD 审中-公开
    半导体制造设备和半导体基板接合方法

    公开(公告)号:US20120190138A1

    公开(公告)日:2012-07-26

    申请号:US13354734

    申请日:2012-01-20

    IPC分类号: H01L21/66 B32B37/30 B32B41/00

    摘要: According to one embodiment, semiconductor manufacturing apparatus includes a first member that holds a first semiconductor substrate; a second member that holds a second semiconductor substrate in a state where a bonding surface of the second semiconductor substrate faces a bonding surface of the first semiconductor substrate; a distance detecting unit that detects a distance between the bonding surface of the first semiconductor substrate and the bonding surface of the second semiconductor substrate; an adjusting unit that adjusts the distance between the bonding surface of the first semiconductor substrate and the bonding surface of the second semiconductor substrate to a predetermined value by moving at least one of the first and second members based on a detection result of the distance detecting unit; and a third member that forms the bonding start point between the first semiconductor substrate and the second semiconductor substrate.

    摘要翻译: 根据一个实施例,半导体制造装置包括保持第一半导体衬底的第一构件; 第二构件,其在第二半导体衬底的接合表面面对第一半导体衬底的接合表面的状态下保持第二半导体衬底; 距离检测单元,其检测第一半导体衬底的接合表面和第二半导体衬底的接合表面之间的距离; 调整单元,其基于所述距离检测单元的检测结果,通过移动所述第一和第二构件中的至少一个来调整所述第一半导体衬底的接合表面与所述第二半导体衬底的接合表面之间的距离为预定值 ; 以及在第一半导体衬底和第二半导体衬底之间形成接合起始点的第三构件。

    Radiographic apparatus
    14.
    发明授权
    Radiographic apparatus 有权
    射线照相设备

    公开(公告)号:US08220993B2

    公开(公告)日:2012-07-17

    申请号:US12697965

    申请日:2010-02-01

    申请人: Kenji Takahashi

    发明人: Kenji Takahashi

    IPC分类号: G01D18/00

    摘要: Fan beams of radiation are output from a multiplicity of radiation sources. Radiation is output simultaneously only from a part of the radiation sources having irradiation ranges that neither overlap with each other nor are adjacent to each other. Image correction data corresponding to each group of radiation sources is obtained by sequentially outputting radiation to the radiographic image detector while the groups of radiation sources are sequentially switched without setting a subject. An effective area that has a value higher than a predetermined threshold value is determined for each image correction data. Radiation is sequentially output to the radiographic image detector in a state in which a subject is set while groups of radiation sources are switched. Radiation image data obtained based on the effective area, and which corresponds to each of the groups of radiation sources, is corrected based on the image correction data.

    摘要翻译: 风扇辐射束从多个辐射源输出。 辐射仅从具有彼此不重叠或彼此相邻的照射范围的一部分辐射源同时输出。 通过在不设置被摄体的情况下顺序地切换辐射源群而顺序地向放射线照相图像检测器输出辐射,获得与各组辐射源对应的图像校正数据。 针对每个图像校正数据确定具有高于预定阈值的有效区域。 在切换了一组辐射源的状态下,放射线照相图像检测器依次输出辐射。 基于有效面积获得并且对应于每组辐射源的辐射图像数据根据图像校正数据被校正。

    Method of roasting material containing at least one of V, Mo and Ni and rotary kiln for roasting the same
    18.
    发明授权
    Method of roasting material containing at least one of V, Mo and Ni and rotary kiln for roasting the same 有权
    含有V,Mo和Ni中的至少一种的焙烧材料的方法和用于焙烧该材料的回转窑

    公开(公告)号:US08137654B2

    公开(公告)日:2012-03-20

    申请号:US11992838

    申请日:2006-02-21

    摘要: Provided is a roasting method capable of reducing both C and S components in minerals down to 0.5% or less, respectively, and securing a yield ratio of 90% or more for the Mo component. In a rotary kiln 7, a V, Mo and Ni containing material containing C and S components is subjected to oxidizing roasting to remove the C and S components from the material before reducing the material by means of a reducing agent in order to recover valuable metals composed of V, Mo and Ni. The rotary kiln is equipped with a burner 11 disposed on a material charge side 8a of the roasting furnace 8 to which the material is charged. In the roasting furnace, a direction along which the material moves and a flow of oxygen-containing gas introduced into the roasting furnace 8 are set to be parallel with each other.

    摘要翻译: 提供了能够将矿物中的C成分和S成分分别降低至0.5%以下的焙烧方法,确保Mo成分的成品率为90%以上。 在回转窑7中,将含有C和S成分的含有V,Mo和Ni的材料进行氧化焙烧,以在通过还原剂还原材料之前从材料中除去C和S组分,以回收有价值的金属 由V,Mo和Ni组成。 回转窑配备有燃烧器11,燃烧器11设置在焙烧炉8的材料充电侧8a上,材料被充入该燃烧器8。 在焙烧炉中,材料移动的方向和引入焙烧炉8中的含氧气体的流动被设定为彼此平行。

    ADPLL frequency synthesizer
    19.
    发明授权
    ADPLL frequency synthesizer 有权
    ADPLL频率合成器

    公开(公告)号:US08130892B2

    公开(公告)日:2012-03-06

    申请号:US12171800

    申请日:2008-07-11

    申请人: Kenji Takahashi

    发明人: Kenji Takahashi

    IPC分类号: H03D3/24 H03L7/00

    摘要: In an ADPLL frequency synthesizer where a frequency control word is changed from FCW0 to FCW2, a control sensitivity estimation section firstly measures oscillatory frequencies f1L and f1H obtained, respectively, when frequency control words FCW1L and FCW1H being used as dummies are set, and then measures an oscillatory frequency f2 obtained when a frequency control word FCW2 is set. Thereafter, based on values of the oscillatory frequencies f1L, f1H and f2, the control sensitivity estimation section calculates a control sensitivity KDCO2 obtained when the frequency control word FCW2 is set. Based on a value of the control sensitivity KDCO2, the loop filter determines values of filter coefficients α2 and ρ2 so as to be equal to a natural frequency ωn and a damping factor ζ, respectively, both of which have been previously designed.

    摘要翻译: 在频率控制字从FCW0变为FCW2的ADPLL频率合成器中,控制灵敏度估计部分首先测量当用作虚拟变量的频率控制字FCW1L和FCW1H时分别获得的振荡频率f1L和f1H,然后测量 当频率控制字FCW2被设置时获得的振荡频率f2。 此后,基于振荡频率f1L,f1H和f2的值,控制灵敏度估计部分计算设置频率控制字FCW2时获得的控制灵敏度KDCO2。 基于控制灵敏度KDCO2的值,环路滤波器将滤波器系数α2和&rgr2的值确定为分别等于先前设计的固有频率ωn和阻尼因子ζ。