Electric power steering
    14.
    发明授权
    Electric power steering 有权
    电动助力转向

    公开(公告)号:US09174667B2

    公开(公告)日:2015-11-03

    申请号:US13879834

    申请日:2011-10-17

    申请人: Hiroshi Suzuki

    发明人: Hiroshi Suzuki

    摘要: A steering force assisting device that includes an electric motor and includes independent two sets of motor driving circuit and control unit, and the electric motor includes coils having the same polarity and different motor characteristics, the coils being wound around each of teeth of a stator of the electric motor. The motor characteristics are a high speed/low torque characteristic and a low speed/high torque characteristic, and may be selected on the basis of the running condition of a vehicle.

    摘要翻译: 一种包括电动机并且包括独立的两组电动机驱动电路和控制单元的转向力辅助装置,并且所述电动机包括具有相同极性和不同电动机特性的线圈,所述线圈缠绕在 电动机。 马达特性是高速/低扭矩特性和低速/高扭矩特性,并且可以基于车辆的运行状态来选择。

    Resonant pressure sensor and method of manufacturing the same
    15.
    发明授权
    Resonant pressure sensor and method of manufacturing the same 有权
    共振压力传感器及其制造方法

    公开(公告)号:US09003889B2

    公开(公告)日:2015-04-14

    申请号:US13593311

    申请日:2012-08-23

    IPC分类号: G01L11/00 G01L9/00

    CPC分类号: G01L9/0016 G01L9/0045

    摘要: A resonant pressure sensor including one or more resonant-type strain gauges arranged on a diaphragm may include a sensor substrate made of silicon and including one surface on which one or more resonant-type strain gauge elements are arranged and the other surface which is polished to have a thickness corresponding to the diaphragm, a base substrate made of silicon and including one surface directly bonded with the other surface of the sensor substrate, a concave portion formed in a portion of the base substrate bonding with the sensor substrate, substantially forming the diaphragm in the sensor substrate, and including a predetermined gap that does not restrict a movable range of the diaphragm due to foreign substances and suppresses vibration of the diaphragm excited by vibration of the resonant-type strain gauge elements, one or more conducting holes, and a fluid.

    摘要翻译: 包括设置在隔膜上的一个或多个谐振型应变计的共振压力传感器可以包括由硅制成的传感器基板,并且包括一个表面,一个表面上布置有一个或多个谐振型应变计元件,另一个表面抛光到 具有对应于隔膜的厚度,由硅制成的基底基板,其包括与传感器基板的另一表面直接接合的一个表面;凹部,形成在与传感器基板接合的基底部分的一部分中,基本上形成隔膜 并且包括预定的间隙,其不会由于异物而限制隔膜的可移动范围,并且抑制由共振型应变计元件的振动激励的隔膜的振动,一个或多个导电孔和 流体。

    Process for producing solvent-soluble reactive polysiloxanes
    16.
    发明授权
    Process for producing solvent-soluble reactive polysiloxanes 有权
    制备溶剂可溶性活性聚硅氧烷的方法

    公开(公告)号:US08952117B2

    公开(公告)日:2015-02-10

    申请号:US13996828

    申请日:2011-12-14

    IPC分类号: C08G77/06 C08G77/20 C08K5/103

    CPC分类号: C08K5/103 C08G77/06 C08G77/20

    摘要: The present invention is a method for producing solvent-soluble polysiloxanes which includes a condensation process of subjecting a raw material having siloxane-bond-forming groups to hydrolytic copolycondensation in the presence of a catalyst to synthesize a reactive polysiloxane represented by general formula (1), the raw material containing both an organosilicon compound (S1) having a (meth)acryloyl group and siloxane-bond-forming groups and at least one silicon compound (S2) selected from among tetraalkoxysilanes and tetrahalogenosilanes, wherein in the condensation process, the organosilicon compound (S1) and silicon compound (S2) are used at a (S2)/(S1) molar ratio of 1.8 or less, and the condensation process is conducted by adding gradually a mixture of the silicon compound (S2) and the catalyst to a raw material liquid containing the organosilicon compound (S1) and water, while keeping the molar ratio of the amount of the silicon compound (S2) to the amount of the organosilicon compound (S1) within the range of 0.001/min to 0.3/min.

    摘要翻译: 本发明是一种溶剂可溶性聚硅氧烷的制造方法,其包括在催化剂存在下使具有硅氧烷键形成基团的原料进行水解共缩聚的缩合方法,合成由通式(1)表示的反应性聚硅氧烷, ,含有具有(甲基)丙烯酰基的有机硅化合物(S1)和硅氧烷键形成基团的原料和选自四烷氧基硅烷和四卤代硅烷中的至少一种硅化合物(S2),其中在缩合过程中,将有机硅 化合物(S1)和硅化合物(S2)以(S2)/(S1)摩尔比为1.8以下使用,缩合工序通过将硅化合物(S2)和催化剂的混合物逐渐加入到 含有有机硅化合物(S1)和水的原料液体,同时保持硅化合物(S2)的量与有机硅的量 化合物(S1)在0.001 / min至0.3 / min的范围内。

    Charged particle beam microscope
    17.
    发明授权
    Charged particle beam microscope 有权
    带电粒子束显微镜

    公开(公告)号:US08841612B2

    公开(公告)日:2014-09-23

    申请号:US13812899

    申请日:2011-08-08

    摘要: This charged particle beam microscope is characterized by being provided with selection means (153, 155) for a measurement processing method for detected particles (118) and by this means selecting a different measurement processing method for a scanning region with a large number of secondary electrons (115) emitted from a sample (114) and for a region with a small number of secondary electrons. Thus, in sample scanning using a charged particle beam microscope, an image in which the contrast of bottom holes and channel bottoms with few emitted secondary electrons is emphasized and images that emphasize shadow contrast can be acquired in a short period of time.

    摘要翻译: 该带电粒子束显微镜的特征在于设置有用于检测粒子(118)的测量处理方法的选择装置(153,155),并且通过这种方式为具有大量二次电子的扫描区域选择不同的测量处理方法 (114)和二次电子数量少的区域(115)。 因此,在使用带电粒子束显微镜的样本扫描中,强调了具有较少发射的二次电子的底部孔和通道底部的对比度的图像,并且可以在短时间内获取强调阴影对比度的图像。

    Semiconductor device and electric power conversion system using the same
    20.
    发明授权
    Semiconductor device and electric power conversion system using the same 失效
    半导体装置和电力转换系统采用相同的方式

    公开(公告)号:US08653588B2

    公开(公告)日:2014-02-18

    申请号:US13553431

    申请日:2012-07-19

    IPC分类号: H01L29/66

    摘要: A semiconductor device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type on the first semiconductor layer; trenches in the first semiconductor layer; a semiconductor protruding part on the first semiconductor layer; a third semiconductor layer on the semiconductor protruding part; a fourth semiconductor layer on the third semiconductor layer; a gate insulating layer disposed along the trench; a first interlayer insulating layer disposed along the trench; a first conductive layer facing to the fourth semiconductor layer; a second conductive layer on the first interlayer insulating layer; a second interlayer insulating layer covering the second conductive layer; a third conductive layer on the third semiconductor layer and fourth semiconductor layer; a contacting part connecting the third conductive layer and third semiconductor layer; and a fourth conductive layer formed on the second semiconductor layer.

    摘要翻译: 半导体器件包括:第一导电类型的第一半导体层; 在第一半导体层上的第二导电类型的第二半导体层; 第一半导体层中的沟槽; 在所述第一半导体层上的半导体突出部; 半导体突出部分上的第三半导体层; 第三半导体层上的第四半导体层; 栅极绝缘层,沿着沟槽设置; 沿沟槽设置的第一层间绝缘层; 面向第四半导体层的第一导电层; 在第一层间绝缘层上的第二导电层; 覆盖所述第二导电层的第二层间绝缘层; 在第三半导体层和第四半导体层上的第三导电层; 连接第三导电层和第三半导体层的接触部分; 以及形成在所述第二半导体层上的第四导电层。