公开(公告)号：US20060082669A1

公开(公告)日：2006-04-20

申请号：US11251882

申请日：2005-10-18

申请人： Ikuko Inoue ,  Hirofumi Yamashita ,  Nagataka Tanaka ,  Hisanori Ihara ,  Tetsuya Yamaguchi ,  Hiroshige Goto

发明人： Ikuko Inoue ,  Hirofumi Yamashita ,  Nagataka Tanaka ,  Hisanori Ihara ,  Tetsuya Yamaguchi ,  Hiroshige Goto

IPC分类号： H04N5/335

CPC分类号： H04N5/335 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14643

摘要： Each of the unit cells provided on a semiconductor substrate of a solid-state imaging device comprises a first p-type well which isolates the semiconductor substrate into an n-type photoelectric conversion region, a second p-type well which is formed in the surface of the photoelectric conversion region and in which a signal scanning circuit section is formed, and a signal storage section which is comprised of a highly doped n-type layer which is formed in the surface of the photoelectric conversion region apart from the second p-type well and higher in impurity concentration than the photoelectric conversion region. The signal storage section having its part placed under a signal readout gate adapted to transfer a packet of signal charge from the storage section to the signal scanning circuit section and its part at which the potential becomes deepest located under the readout gate.

摘要翻译： 设置在固态成像器件的半导体衬底上的每个单元电池包括将半导体衬底隔离成n型光电转换区域的第一p型阱，形成在表面的第二p型阱 的光电转换区域，并且其中形成信号扫描电路部分的信号存储部分，以及形成在光电转换区域与第二p型光电转换区域的表面中的高掺杂n型层的信号存储部分 杂质浓度高于光电转换区。 信号存储部分，其部分放置在信号读出门的下面，适于将信号电荷的分组从存储部分传送到信号扫描电路部分，并且其部分位于读出栅极下方的最深处。

公开(公告)号：US06194244B1

公开(公告)日：2001-02-27

申请号：US09109061

申请日：1998-07-02

申请人： Tetsuya Yamaguchi ,  Hisanori Ihara ,  Hirofumi Yamashita ,  Hidetoshi Nozaki ,  Ikuko Inoue

发明人： Tetsuya Yamaguchi ,  Hisanori Ihara ,  Hirofumi Yamashita ,  Hidetoshi Nozaki ,  Ikuko Inoue

IPC分类号： H01L2100

CPC分类号： H01L27/14601 ,  H01L27/14689

摘要： The solid-state image sensor comprises a semiconductor substrate, a plurality of photoelectric conversion sections formed within respective isolated active regions on the semiconductor substrate, an image area wherein unit cells comprising the plurality of photoelectric conversion sections and a signal scanning circuit are arranged in a two-dimensional array form, and signal lines for reading signals from the respective unit cells within the image pick-up area, wherein the respective photoelectric conversion sections being formed by at least twice ion implantation.

摘要翻译： 固态图像传感器包括半导体衬底，形成在半导体衬底上的各个隔离有源区域内的多个光电转换部分，其中包括多个光电转换部分的单元电池和信号扫描电路的图像区域布置在 二维阵列形式和用于从图像拾取区域内的相应单位单元读取信号的信号线，其中各个光电转换部分通过至少两次离子注入形成。

公开(公告)号：US6072206A

公开(公告)日：2000-06-06

申请号：US272339

申请日：1999-03-19

申请人： Hirofumi Yamashita ,  Ikuko Inoue ,  Tetsuya Yamaguchi ,  Hisanori Ihara ,  Hidetoshi Nozaki

发明人： Hirofumi Yamashita ,  Ikuko Inoue ,  Tetsuya Yamaguchi ,  Hisanori Ihara ,  Hidetoshi Nozaki

IPC分类号： H01L27/146 ,  H01L31/0352 ,  H04N5/335 ,  H04N5/361 ,  H04N5/369 ,  H04N5/374 ,  H04N5/3745 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14609 ,  H01L27/14643 ,  H01L31/03529 ,  Y02E10/50

摘要： The present invention provides a solid state image sensor constructed in such a manner that, even if the impurity concentration of the wells of a transistors is increased, the junction leakage current does not increase, and thus, the picture quality of the reproduced picture is not deteriorated. On a p-type substrate, there are formed a first p-type well for a photoelectric conversion portion comprising a photodiode, and a second p-type well for a signal scanning circuit portion. In the surface portions of the first and second p-type wells, a first and a second n-type diffused layers are formed, respectively. The drain of a reset transistor and the drain of an amplifying transistor which constitute the second n-type diffused layer are connected to a power supply line. Further, the source of an address transistor which is an n-type diffused layer is connected to a vertical signal line. The gates of the amplifying transistor and the address transistor are formed between second n-type diffused layers disposed at predetermined intervals on the surface of the second p-type well.

摘要翻译： 本发明提供了一种固态图像传感器，其构造方式是，即使晶体管的阱的杂质浓度增加，结漏电流也不增加，因此再现图像的图像质量不是 恶化 在p型衬底上形成有用于光电转换部分的第一p型阱以及用于信号扫描电路部分的第二p型阱。 在第一和第二p型阱的表面部分分别形成第一和第二n型扩散层。 构成第二n型扩散层的复位晶体管的漏极和放大晶体管的漏极连接到电源线。 此外，作为n型扩散层的地址晶体管的源极连接到垂直信号线。 放大晶体管和地址晶体管的栅极形成在第二p型阱的表面上以预定间隔设置的第二n型扩散层之间。

公开(公告)号：US09564463B2

公开(公告)日：2017-02-07

申请号：US15053356

申请日：2016-02-25

申请人： Hisanori Ihara

发明人： Hisanori Ihara

IPC分类号： H01L21/00 ,  H01L27/146

CPC分类号： H01L27/1463 ,  H01L27/14605 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689

摘要： Image sensors are provided including a substrate defining a plurality of pixel regions, the substrate having a first surface and a second surface opposite the first surface. The second surface of the substrate is configured to receive light incident thereon and the substrate defines a deep trench extending from the second surface of the substrate toward the first surface substrate and separating the plurality of pixel regions from each other. In each of the plurality of pixel regions of the substrate, a photoelectric conversion region is provided. A gate electrode is provided on the photoelectric conversion region and a negative fixed charge layer covering the second surface of the substrate and at least a portion of a sidewall of the deep trench is also provided. The image sensors further include a shallow device isolation layer on the first surface of the substrate. The shallow device isolation layer defines an active region in each of the pixel regions and the negative fixed charge layer contacts the shallow device isolation layer.

摘要翻译： 提供图像传感器，其包括限定多个像素区域的基板，所述基板具有第一表面和与第一表面相对的第二表面。 衬底的第二表面被配置为接收入射在其上的光，并且衬底限定从衬底的第二表面朝向第一表面衬底延伸并将多个像素区彼此分离的深沟槽。 在基板的多个像素区域的每一个中，提供光电转换区域。 在光电转换区域上设置栅电极，并且还设置覆盖基板的第二表面的负固定电荷层和深沟槽的侧壁的至少一部分。 图像传感器还包括在衬底的第一表面上的浅器件隔离层。 浅器件隔离层限定每个像素区域中的有源区，负的固定电荷层接触浅器件隔离层。

公开(公告)号：US20160043132A1

公开(公告)日：2016-02-11

申请号：US14819908

申请日：2015-08-06

申请人： Hisanori Ihara

发明人： Hisanori Ihara

IPC分类号： H01L27/146

CPC分类号： H01L27/14643 ,  H01L27/14603 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14641

摘要： A CMOS image sensor includes a substrate and at least one device isolation region in the substrate and defining first and second pixel regions and first and second active portions in each of the first and second pixel regions. A reset and select transistor gates are disposed in the first pixel region, while a source follower transistor gate is disposed in the second pixel region, such that pixels in the first and second pixel regions share the reset, select and source follower transistors. A length of the source follower transistor gate may be greater than lengths of the reset and selection transistor gates.

摘要翻译： CMOS图像传感器包括衬底和衬底中的至少一个器件隔离区域，并且限定第一和第二像素区域以及第一和第二像素区域中的每一个中的第一和第二有源部分。 复位和选择晶体管栅极设置在第一像素区域中，而源极跟随器晶体管栅极设置在第二像素区域中，使得第一和第二像素区域中的像素共享复位，选择和源极跟随器晶体管。 源极跟随器晶体管栅极的长度可以大于复位和选择晶体管栅极的长度。

公开(公告)号：US08653436B2

公开(公告)日：2014-02-18

申请号：US12641133

申请日：2009-12-17

申请人： Hisanori Ihara

发明人： Hisanori Ihara

IPC分类号： H01L31/00

CPC分类号： H01L27/14603 ,  H01L27/1464 ,  H01L27/14683

摘要： A pinned photodiode structure with peninsula-shaped transfer gate which decrease the occurrence of a potential barrier between the photodiode and the floating drain, prevents loss of full well capacity (FWC) and decreases occurrences of image lag.

摘要翻译： 具有半岛形传输门的钉扎光电二极管结构，可减少光电二极管和浮置漏极之间的势垒的发生，防止全阱容量（FWC）的损失，并减少图像滞后的发生。

公开(公告)号：US07554141B2

公开(公告)日：2009-06-30

申请号：US11392616

申请日：2006-03-30

申请人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Ikuko Inoue ,  Nagataka Tanaka

发明人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Ikuko Inoue ,  Nagataka Tanaka

IPC分类号： H01L31/00 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14689 ,  H01L27/1463

摘要： A solid-state image pickup device comprising a semiconductor substrate which comprises a substrate body containing P-type impurities and a first N-type semiconductor layer containing N-type impurities, the first N-type semiconductor layer being provided on the substrate body, and including a first P-type semiconductor layer which contains p-type impurities, and which is located on the substrate body, a plurality of optical/electrical conversion portions formed of second N-type semiconductor layers which are provided independently of each other in respective positions in a surface portion of the first N-type semiconductor layer, and a plurality of second P-type semiconductor layers which are formed to surround the optical/electrical conversion portions, which are provided along element isolation regions provided in respective positions in the surface portion of the first N-type semiconductor layer, and which continuously extend from the surface portion of the first N-type semiconductor layer to a surface portion of the first P-type semiconductor layer.

摘要翻译： 一种固态摄像装置，包括：半导体衬底，其包括含有P型杂质的衬底主体和包含N型杂质的第一N型半导体层，所述第一N型半导体层设置在所述衬底主体上;以及 包括含有p型杂质的第一P型半导体层，其位于基板主体上，多个光电转换部分由第二N型半导体层形成，该第二N型半导体层在相应位置彼此独立地设置 在第一N型半导体层的表面部分和形成为围绕光/电转换部分的多个第二P型半导体层，其沿着设置在表面部分中的各个位置的元件隔离区域设置 的第一N型半导体层，并且从第一N型半导体的表面部分连续地延伸 层到第一P型半导体层的表面部分。

公开(公告)号：US20060219867A1

公开(公告)日：2006-10-05

申请号：US11392616

申请日：2006-03-30

申请人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Ikuko Inoue ,  Nagataka Tanaka

发明人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Ikuko Inoue ,  Nagataka Tanaka

IPC分类号： H01L27/00 ,  H01L31/00

CPC分类号： H01L27/14689 ,  H01L27/1463

摘要： A solid-state image pickup device comprising a semiconductor substrate which comprises a substrate body containing P-type impurities and a first N-type semiconductor layer containing N-type impurities, the first N-type semiconductor layer being provided on the substrate body, and including a first P-type semiconductor layer which contains p-type impurities, and which is located on the substrate body, a plurality of optical/electrical conversion portions formed of second N-type semiconductor layers which are provided independently of each other in respective positions in a surface portion of the first N-type semiconductor layer, and a plurality of second P-type semiconductor layers which are formed to surround the optical/electrical conversion portions, which are provided along element isolation regions provided in respective positions in the surface portion of the first N-type semiconductor layer, and which continuously extend from the surface portion of the first N-type semiconductor layer to a surface portion of the first P-type semiconductor layer.

公开(公告)号：US20060046369A1

公开(公告)日：2006-03-02

申请号：US11210681

申请日：2005-08-25

申请人： Hisanori Ihara ,  Nagataka Tanaka ,  Hiroshige Goto

发明人： Hisanori Ihara ,  Nagataka Tanaka ,  Hiroshige Goto

IPC分类号： H01L21/76 ,  H01L21/8238

CPC分类号： H01L27/14609 ,  H01L27/14601 ,  H01L27/14689

摘要： A solid-state image sensor having a well of a first conductivity type; a photoelectric conversion region having a second conductivity type formed in the well storing charges obtained from a photoelectric conversion; a drain region having the second conductivity type formed in the well apart from a surface of the well; and a gate electrode formed on the surface of the well via a gate insulator, the gate electrode transferring the charges from the photoelectric conversion region to the drain region. Alternatively, a transistor includes a first semiconductor region having a first conductivity type; second and third semiconductor regions having a second conductivity type formed in the first semiconductor region, the second and third semiconductor regions being separated from each other by a portion of the first semiconductor region serving as a channel region; an insulator layer provided on a surface of the first semiconductor region in contact with the channel region; a gate electrode provided on the insulator layer; and the first semiconductor region includes a shield semiconductor region of the first conductivity type disposed between the surface of the first semiconductor region and at least one of the second and third semiconductor regions such that the at least one of the second and third semiconductor regions is sandwiched between the shield region and the first semiconductor region.

摘要翻译： 一种具有第一导电类型的阱的固态图像传感器; 在由光电转换得到的储存电荷中形成的具有第二导电类型的光电转换区; 具有第二导电类型的漏极区域形成在与阱的表面分离的井中; 以及通过栅极绝缘体在阱的表面上形成的栅电极，栅电极将电荷从光电转换区域传送到漏区。 或者，晶体管包括具有第一导电类型的第一半导体区域; 具有形成在第一半导体区域中的第二导电类型的第二和第三半导体区域，第二和第三半导体区域被用作沟道区域的第一半导体区域的一部分彼此分离; 设置在与所述沟道区域接触的所述第一半导体区域的表面上的绝缘体层; 设置在所述绝缘体层上的栅电极; 并且第一半导体区域包括设置在第一半导体区域的表面和第二和第三半导体区域中的至少一个之间的第一导电类型的屏蔽半导体区域，使得第二和第三半导体区域中的至少一个被夹在 在所述屏蔽区域和所述第一半导体区域之间。

公开(公告)号：US20050242385A1

公开(公告)日：2005-11-03

申请号：US11095592

申请日：2005-04-01

申请人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Masayuki Ayabe ,  Hisanori Ihara

发明人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Masayuki Ayabe ,  Hisanori Ihara

IPC分类号： H01L27/108 ,  H01L27/146 ,  H01L31/10 ,  H04N5/335 ,  H04N5/369 ,  H04N5/374

CPC分类号： H01L27/14609 ,  H01L27/14601 ,  H01L27/14643

摘要： A solid state imaging device includes a substrate of a first conductivity type. A transistor, which includes a first gate electrode and a first and second impurity areas, is provided on a surface of the substrate. The first and second impurity areas are formed in the surface of the substrate and sandwich a region under the first gate electrode. A third impurity area of a second conductivity type is formed in the surface of the substrate and spaced from the second impurity area at an opposite side to the first gate electrode. A fourth impurity area is formed under the second impurity area and connected to the third impurity area. A second gate electrode is provided above the substrate. A fifth impurity area of the second conductivity type is formed in the surface of the substrate. The third and fifth impurity areas sandwich a region under the second gate electrode.

摘要翻译： 固态成像装置包括第一导电类型的衬底。 在衬底的表面上设置包括第一栅电极和第一和第二杂质区的晶体管。 第一和第二杂质区域形成在衬底的表面中并夹着第一栅电极下的区域。 第二导电类型的第三杂质区域形成在衬底的表面中并且与第一栅电极相对的一侧与第二杂质区隔开。 在第二杂质区下方形成第四杂质区，并与第三杂质区连接。 在基板上设置第二栅电极。 第二导电类型的第五杂质区域形成在衬底的表面中。 第三和第五杂质区夹在第二栅电极下方的区域。