公开(公告)号：US09305947B2

公开(公告)日：2016-04-05

申请号：US14624751

申请日：2015-02-18

申请人： Hisanori Ihara

发明人： Hisanori Ihara

IPC分类号： H01L29/04 ,  H01L31/036 ,  H01L27/146

CPC分类号： H01L27/1463 ,  H01L27/14605 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689

摘要： Image sensors are provided including a substrate defining a plurality of pixel regions, the substrate having a first surface and a second surface opposite the first surface. The second surface of the substrate is configured to receive light incident thereon and the substrate defines a deep trench extending from the second surface of the substrate toward the first surface substrate and separating the plurality of pixel regions from each other. In each of the plurality of pixel regions of the substrate, a photoelectric conversion region is provided. A gate electrode is provided on the photoelectric conversion region and a negative fixed charge layer covering the second surface of the substrate and at least a portion of a sidewall of the deep trench is also provided. The image sensors further include a shallow device isolation layer on the first surface of the substrate. The shallow device isolation layer defines an active region in each of the pixel regions and the negative fixed charge layer contacts the shallow device isolation layer.

摘要翻译： 提供图像传感器，其包括限定多个像素区域的基板，所述基板具有第一表面和与第一表面相对的第二表面。 衬底的第二表面被配置为接收入射在其上的光，并且衬底限定从衬底的第二表面朝向第一表面衬底延伸并将多个像素区彼此分离的深沟槽。 在基板的多个像素区域的每一个中，提供光电转换区域。 在光电转换区域上设置栅电极，并且还设置覆盖基板的第二表面的负固定电荷层和深沟槽的侧壁的至少一部分。 图像传感器还包括在衬底的第一表面上的浅器件隔离层。 浅器件隔离层限定每个像素区域中的有源区，负的固定电荷层接触浅器件隔离层。

公开(公告)号：US20100176276A1

公开(公告)日：2010-07-15

申请号：US12641133

申请日：2009-12-17

申请人： Hisanori Ihara

发明人： Hisanori Ihara

IPC分类号： H01L27/146 ,  H01L21/28

CPC分类号： H01L27/14603 ,  H01L27/1464 ,  H01L27/14683

摘要： A pinned photodiode structure with peninsula-shaped transfer gate which decrease the occurrence of a potential barrier between the photodiode and the floating drain, prevents loss of full well capacity (FWC) and decreases occurrences of image lag.

摘要翻译： 具有半岛形传输门的钉扎光电二极管结构，可减少光电二极管和浮置漏极之间的势垒的发生，防止全阱容量（FWC）的损失，并减少图像滞后的发生。

公开(公告)号：US07176507B2

公开(公告)日：2007-02-13

申请号：US11028556

申请日：2005-01-05

申请人： Hisanori Ihara

发明人： Hisanori Ihara

IPC分类号： H01L27/146

CPC分类号： H01L27/14603 ,  H01L27/14621 ,  H01L27/14812

摘要： A solid state image sensing device comprises a first semiconductor region of first conductivity type, a second semiconductor region of second conductivity type provided in the first semiconductor region, a third semiconductor region of second conductivity type provided in the first semiconductor region with a space from the second semiconductor region, a gate electrode provided on the first semiconductor region between the second semiconductor region and the third semiconductor region, a gate insulator layer interposed between the first semiconductor region and the gate electrode, and a fourth semiconductor region of second conductivity type provided below the second semiconductor region in the first semiconductor region.

摘要翻译： 固体摄像装置包括第一导电类型的第一半导体区域，设置在第一半导体区域中的第二导电类型的第二半导体区域，第二导电类型的第三半导体区域，设置在第一半导体区域中， 第二半导体区域，设置在第二半导体区域和第三半导体区域之间的第一半导体区域上的栅电极，介于第一半导体区域和栅极电极之间的栅极绝缘体层，以及下面提供的第二导电类型的第四半导体区域 第一半导体区域中的第二半导体区域。

公开(公告)号：US20050173742A1

公开(公告)日：2005-08-11

申请号：US11028556

申请日：2005-01-05

申请人： Hisanori Ihara

发明人： Hisanori Ihara

IPC分类号： H01L27/14 ,  H01L27/146 ,  H01L27/148 ,  H01L29/06

CPC分类号： H01L27/14603 ,  H01L27/14621 ,  H01L27/14812

摘要： A solid state image sensing device comprises a first semiconductor region of first conductivity type, a second semiconductor region of second conductivity type provided in the first semiconductor region, a third semiconductor region of second conductivity type provided in the first semiconductor region with a space from the second semiconductor region, a gate electrode provided on the first semiconductor region between the second semiconductor region and the third semiconductor region, a gate insulator layer interposed between the first semiconductor region and the gate electrode, and a fourth semiconductor region of second conductivity type provided below the second semiconductor region in the first semiconductor region.

摘要翻译： 固体摄像装置包括第一导电类型的第一半导体区域，设置在第一半导体区域中的第二导电类型的第二半导体区域，第二导电类型的第三半导体区域，设置在第一半导体区域中， 第二半导体区域，设置在第二半导体区域和第三半导体区域之间的第一半导体区域上的栅电极，介于第一半导体区域和栅极电极之间的栅极绝缘体层，以及下面提供的第二导电类型的第四半导体区域 第一半导体区域中的第二半导体区域。

公开(公告)号：US06441411B2

公开(公告)日：2002-08-27

申请号：US09728123

申请日：2000-12-04

申请人： Hidetoshi Nozaki ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Tetsuya Yamaguchi ,  Ikuko Inoue

发明人： Hidetoshi Nozaki ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Tetsuya Yamaguchi ,  Ikuko Inoue

IPC分类号： H01L27146

CPC分类号： H01L27/14643

摘要： A solid-state image sensor comprises a semiconductor substrate, a photoelectric conversion portion formed above the semiconductor substrate, and noise cancelers each formed, adjacent to the photoelectric conversion portion, on the semiconductor substrate through an insulating film, for removing noise of a signal read from the photoelectric conversion portion, wherein the semiconductor substrate has a conductive type opposite to a conductive type of a charge of the signal, and has a first region where concentration of impurities for determining the conductive type is high and a second region where concentration of the impurities on the first region is low.

摘要翻译： 固态图像传感器包括半导体衬底，形成在半导体衬底上方的光电转换部分和与光电转换部分相邻形成的噪声抵消器，其通过绝缘膜在半导体衬底上，用于去除读取的信号的噪声 从所述光电转换部分，其中所述半导体衬底具有与所述信号的电荷的导电类型相反的导电类型，并且具有用于确定所述导电类型的杂质浓度高的第一区域和所述第二区域， 第一区域上的杂质低。

公开(公告)号：US20150243694A1

公开(公告)日：2015-08-27

申请号：US14624751

申请日：2015-02-18

申请人： Hisanori Ihara

发明人： Hisanori Ihara

IPC分类号： H01L27/146

CPC分类号： H01L27/1463 ,  H01L27/14605 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689

摘要： Image sensors are provided including a substrate defining a plurality of pixel regions, the substrate having a first surface and a second surface opposite the first surface. The second surface of the substrate is configured to receive light incident thereon and the substrate defines a deep trench extending from the second surface of the substrate toward the first surface substrate and separating the plurality of pixel regions from each other. In each of the plurality of pixel regions of the substrate, a photoelectric conversion region is provided. A gate electrode is provided on the photoelectric conversion region and a negative fixed charge layer covering the second surface of the substrate and at least a portion of a sidewall of the deep trench is also provided. The image sensors further include a shallow device isolation layer on the first surface of the substrate. The shallow device isolation layer defines an active region in each of the pixel regions and the negative fixed charge layer contacts the shallow device isolation layer.

摘要翻译： 提供图像传感器，其包括限定多个像素区域的基板，所述基板具有第一表面和与第一表面相对的第二表面。 衬底的第二表面被配置为接收入射在其上的光，并且衬底限定从衬底的第二表面朝向第一表面衬底延伸并将多个像素区彼此分离的深沟槽。 在基板的多个像素区域的每一个中，提供光电转换区域。 在光电转换区域上设置栅电极，并且还设置覆盖基板的第二表面的负固定电荷层和深沟槽的侧壁的至少一部分。 图像传感器还包括在衬底的第一表面上的浅器件隔离层。 浅器件隔离层限定每个像素区域中的有源区，负的固定电荷层接触浅器件隔离层。

公开(公告)号：US08987751B2

公开(公告)日：2015-03-24

申请号：US13301270

申请日：2011-11-21

申请人： Hisanori Ihara

发明人： Hisanori Ihara

IPC分类号： H01L27/148 ,  H01L31/103 ,  H01L27/146 ,  H01L31/0216 ,  H01L31/0232

CPC分类号： H01L31/103 ,  H01L27/1461 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14687 ,  H01L31/02161 ,  H01L31/02162 ,  H01L31/02327 ,  Y02E10/52

摘要： According to example embodiments, a photodiode system may include a substrate, and at least one photodiode in the substrate, and a wideband gap material layer on a first surface of the substrate. The at least one photodiode may be between an insulating material in a horizontal plane. According to example embodiments, a back-side-illumination (BSI) CMOS image sensor and/or a solar cell may include a photodiode device. The photodiode device may include a substrate, at least one photodiode in the substrate, a wide bandgap material layer on a first surface of the substrate, and an anti-reflective layer (ARL) on the wide bandgap material layer.

摘要翻译： 根据示例实施例，光电二极管系统可以包括衬底，以及衬底中的至少一个光电二极管，以及在衬底的第一表面上的宽带间隙材料层。 所述至少一个光电二极管可以在水平面内的绝缘材料之间。 根据示例性实施例，背面照明（BSI）CMOS图像传感器和/或太阳能电池可以包括光电二极管装置。 光电二极管器件可以包括衬底，衬底中的至少一个光电二极管，在衬底的第一表面上的宽带隙材料层和宽带隙材料层上的抗反射层（ARL）。

公开(公告)号：US20130175582A1

公开(公告)日：2013-07-11

申请号：US13561937

申请日：2012-07-30

申请人： Hisanori Ihara ,  Chang-rok Moon

发明人： Hisanori Ihara ,  Chang-rok Moon

IPC分类号： H01L27/148

CPC分类号： H01L27/1461 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14647 ,  H01L27/14689

摘要： An image sensor includes a transfer transistor including a vertical gate portion extending in a depth direction of a substrate in an active region of the substrate and photodiode regions located at positions of different depths with respect to a top surface of the substrate in the active region. At least one color adjustment path extends between at least two photodiode regions of the photodiode regions and provides a charge movement path between the at least two photodiode regions.

摘要翻译： 图像传感器包括传输晶体管，其包括在衬底的有源区域中沿着衬底的深度方向延伸的垂直栅极部分和位于有源区域中相对于衬底的顶表面的不同深度的位置处的光电二极管区域。 至少一个颜色调整路径在光电二极管区域的至少两个光电二极管区域之间延伸，并且在至少两个光电二极管区域之间提供电荷移动路径。

公开(公告)号：US20090008686A1

公开(公告)日：2009-01-08

申请号：US12166621

申请日：2008-07-02

申请人： Motohiro MAEDA ,  Hisanori Ihara ,  Hirofumi Yamashita ,  Fumiaki Sano ,  Makoto Monoi ,  Takanori Yagami

发明人： Motohiro MAEDA ,  Hisanori Ihara ,  Hirofumi Yamashita ,  Fumiaki Sano ,  Makoto Monoi ,  Takanori Yagami

IPC分类号： H01L27/146

CPC分类号： H01L27/1463 ,  H01L27/14603

摘要： A transfer gate is formed such that both end portions thereof in a second direction, which crosses a first direction in which a photodiode and a floating diffusion layer that is formed with a distance from the photodiode are arranged, are located inside boundaries with element isolation regions. Channel stopper layers are formed on surface portions of a device region in the vicinity of lower parts of both end portions of the transfer gate in the second direction in such a manner to extend to the boundaries with the element isolation regions.

摘要翻译： 传输门形成为使得其第二方向上的两个端部跨过与光电二极管形成距离的光电二极管和浮动扩散层的第一方向，其位于与元件隔离区域的边界内 。 通道阻挡层形成在传输门的两端部的下部附近的器件区域的第二方向上的表面部分上，以延伸到与元件隔离区域的边界。

公开(公告)号：US20080012088A1

公开(公告)日：2008-01-17

申请号：US11776791

申请日：2007-07-12

申请人： Tetsuya YAMAGUCHI ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Ikuko Inoue ,  Nagataka Tanaka ,  Hisanori Ihara

发明人： Tetsuya YAMAGUCHI ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Ikuko Inoue ,  Nagataka Tanaka ,  Hisanori Ihara

IPC分类号： H01L31/103

CPC分类号： H01L27/14609

摘要： An n/p−/p+ substrate where a p−-type epitaxial layer and an n-type epitaxial layer have been deposited on a p+-type substrate is provided. In the surface region of the n-type epitaxial layer, the n-type region of a photoelectric conversion part has been formed. Furthermore, a barrier layer composed of a p-type semiconductor region has been formed so as to enclose the n-type region of the photoelectric conversion part in a plane and reach the p−-type epitaxial layer from the substrate surface. A p-type semiconductor region has also been formed at a chip cutting part for dividing the substrate into individual devices so as to reach the p−-type epitaxial layer from the substrate surface.

摘要翻译： 其中p型+外延层和n型外延层已经沉积在p < SUP + +型衬底。 在n型外延层的表面区域中，形成了光电转换部的n型区域。 此外，已经形成了由p型半导体区域构成的阻挡层，以将光电转换部件的n型区域包围在平面内并从P型半导体区域到达p型半导体区域 基材表面。 在芯片切割部分也形成了p型半导体区域，用于将基板分离为各个器件，从而从衬底表面到达p +型外延层。