公开(公告)号：US20140131314A1

公开(公告)日：2014-05-15

申请号：US13761222

申请日：2013-02-07

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yoji ANDO ,  Tetsuo ONO ,  Tatehito USUI

IPC: B05C11/00

CPC classification number: H01J37/3299 ,  H01J37/32146 ,  H01J37/32266 ,  H01J37/32972

Abstract: A plasma processing apparatus includes: a processing chamber in which plasma processing is performed; a gas feeding unit which supplied process gas into the processing chamber; a radio-frequency power source which supplies radio-frequency power that turns the process gas fed into the processing chamber to plasma; and a light detector which detects the light emitted from the plasma generated in the process chamber. The light detector includes a detecting unit which detects, during respective preset exposure times, the light emitted from the plasma that is generated due to pulse-modulated radio-frequency power, and a control unit which performs control such that the amount of the light emitted from the plasma during each of the preset exposure times becomes constant.

Abstract translation: 一种等离子体处理装置，包括：进行等离子体处理的处理室; 气体供给单元，其将处理气体供给到处理室中; 射频电源，其提供将进入处理室的处理气体转换为等离子体的射频功率; 以及光检测器，其检测从处理室中产生的等离子体发射的光。 光检测器包括：检测单元，其在相应的预设曝光时间期间检测由于脉冲调制的射频功率而产生的等离子体发射的光;以及控制单元，其执行控制，使得发射的光量 在每个预设曝光时间期间从等离子体变为恒定。

公开(公告)号：US20170372878A1

公开(公告)日：2017-12-28

申请号：US15677260

申请日：2017-08-15

Applicant: Hitachi High-Technologies Corporation

Inventor： Masahito TOGAMI ,  Tatehito USUI ,  Kosa HIROTA ,  Satomi INOUE ,  Shigeru NAKAMOTO

IPC: H01J37/32

CPC classification number: H01J37/32972 ,  H01J37/32458 ,  H01J37/32908 ,  H01J37/32963 ,  H01J37/3299 ,  H01J2237/0266 ,  H01J2237/2445 ,  H01J2237/3341

Abstract: A plasma processing apparatus includes: a detector configured to detect a change in an intensity of light emission from plasma formed inside a processing chamber; and a unit configured to adjust conditions for forming the plasma or processing a wafer arranged inside the processing chamber using an output from the detector, wherein the detector detects a signal of the intensity of light emission at plural time instants before an arbitrary time instant during processing, and wherein the adjusting unit removes the component of a temporal change of a long cycle of the intensity of light emission from this detected signal and detects the component of a short temporal change of the intensity of light emission, and adjusts the conditions for forming the plasma or processing a wafer arranged inside the processing chamber based on the short temporal change of the detected intensity of light emission.

公开(公告)号：US20170178874A1

公开(公告)日：2017-06-22

申请号：US15277272

申请日：2016-09-27

Applicant: Hitachi High-Technologies Corporation

Inventor： Yohei KAWAGUCHI ,  Tatehito USUI ,  Masahito TOGAMI ,  Satomi INOUE ,  Shigeru NAKAMOTO

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/66 ,  G01N21/84 ,  G01B11/06

CPC classification number: H01J37/32972 ,  G01B11/0616 ,  G01N21/84 ,  H01J37/32715 ,  H01J37/32834 ,  H01J37/32935 ,  H01J37/32963 ,  H01J2237/334 ,  H01L21/3065 ,  H01L22/26

Abstract: A plasma processing device performing etching processing to a sample disposed in a processing chamber disposed in a vacuum vessel by using plasma formed in the processing chamber includes a light detector, a component detector, and a determination unit. The light detector detects light intensity of a plurality of wavelengths from the inside of the processing chamber at a plurality of times during the sample processing. The component detector detects, by using a result of a principal component analysis of time-series data, a highly correlated component between the time-series data of a plurality of the wavelengths at a certain time in a plurality of the times obtained from output of the light detector. The determination unit determines an amount or an end point of the etching processing based on a change in light intensity of at least one of a plurality of the wavelengths detected by using the time-series data from which the highly correlated component is removed.

公开(公告)号：US20160351405A1

公开(公告)日：2016-12-01

申请号：US15060822

申请日：2016-03-04

Applicant: Hitachi High-Technologies Corporation

Inventor： Kousuke FUKUCHI ,  Shigeru NAKAMOTO ,  Tatehito USUI ,  Satomi INOUE

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/308

CPC classification number: H01L21/3065 ,  H01J37/32009 ,  H01J37/32972 ,  H01J2237/334 ,  H01L21/3081 ,  H01L22/12 ,  H01L22/26

Abstract: A plasma processing method includes forming plasma in a processing chamber; and performing etching to a film to be processed of a film structure that has previously been disposed on an upper surface of a wafer that includes a plurality of film layers. The film structure includes: a lower film including at least one film layer and a groove structure; and an upper film including at least one film layer that covers an inside and an upper end of the groove structure. The plasma processing method includes: removing the upper film by etching until an upper end of the groove structure of the lower film is exposed; performing etching to a film layer of the upper film inside the groove structure; and determining an end point by using a value of thickness of the film layer inside the groove structure of the lower film upon completion of the removing.

Abstract translation: 等离子体处理方法包括在处理室中形成等离子体; 并对预先设置在包括多个膜层的晶片的上表面上的膜结构进行处理的膜进行蚀刻。 膜结构包括：下膜，其包括至少一个膜层和凹槽结构; 以及包括至少一个覆盖所述凹槽结构的内侧和上端的薄膜层的上部薄膜。 等离子体处理方法包括：通过蚀刻去除上部膜，直到下部膜的槽结构的上端露出; 对槽结构内的上膜的膜层进行蚀刻; 并且通过在完成去除时使用下膜的沟槽结构内的膜层的厚度值来确定终点。

公开(公告)号：US20140295583A1

公开(公告)日：2014-10-02

申请号：US14014557

申请日：2013-08-30

Applicant: Hitachi-High-Technologies Corporation

Inventor： Shigeru NAKAMOTO ,  Tatehito USUI ,  Satomi INOUE ,  Kousa HIROTA ,  Kousuke FUKUCHI

IPC: H01L21/66

CPC classification number: H01L22/12 ,  G01B11/0616 ,  G01B11/0683 ,  H01J37/32963 ,  H01J37/32972 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a plasma processing method and apparatus for processing a film to be processed contained in a film structure preliminarily formed on an upper surface of a wafer mounted in a processing chamber, by using plasma, a residual film thickness at an arbitrary time is calculated using a result of comparing detective differential waveform pattern data with actual differential waveform pattern data. The detective differential waveform pattern data is produced by using two basic differential waveform pattern data which respectively use, as parameters, residual thicknesses of the films to be processed in film structures having underlying films with different thicknesses and the wavelengths of the interference light. The detective waveform pattern data being preliminarily prepared prior to processing of the wafer. Determination is made as to whether or not an object of the processing has been reached by using the residual film thickness.

Abstract translation: 在通过使用等离子体预先形成在安装在处理室中的晶片的上表面上预先形成的膜结构中的处理被处理膜的等离子体处理方法和装置中，任意时间的残留膜厚度使用 比较检测差分波形模式数据与实际差分波形模式数据的结果。 通过使用分别使用具有不同厚度的底膜和干涉光的膜的膜结构中要处理的膜的残留厚度作为参数的两个基本差分波形图案数据来产生检测差分波形图案数据。 在处理晶片之前预先准备的检测波形图案数据。 通过使用剩余膜厚来确定是否达到了加工对象。