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公开(公告)号：US20110020036A1
公开(公告)日：2011-01-27
申请号：US12509910
申请日：2009-07-27
申请人： Manoj K. Bhattacharyya , Hou T. Ng
发明人： Manoj K. Bhattacharyya , Hou T. Ng
IPC分类号： G03G15/10
CPC分类号： G03G15/6558 , G03G15/10 , G03G2215/00708
摘要： The present disclosure is drawn to apparatuses, methods, and systems involving liquid electrophotographic printing. Generally, a liquid electrophotographic printer can comprise an ink application device that is configured to apply liquid electrophotographic ink to a substrate, and a roller having a tacky surface that removes excess material from the surface of the substrate thereby pretreating the substrate prior to receiving the liquid electrophotographic ink.
摘要翻译： 本公开涉及涉及液体电子照相印刷的装置，方法和系统。 通常，液体电子照相打印机可以包括构造成将液体电子照相油墨施加到基底的油墨施加装置，以及具有粘性表面的辊，其从衬底的表面去除多余的材料，从而在接收液体之前预处理衬底 电子照相油墨。
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公开(公告)号：US20130029111A1
公开(公告)日：2013-01-31
申请号：US13194066
申请日：2011-07-29
IPC分类号： B32B3/10 , C09D7/12 , G03G15/02 , C09D153/00
CPC分类号： G03G15/10 , C09D9/04 , C09D11/54 , G03G15/6585 , Y10T428/24802
摘要： A post-treatment composition for a digitally printed image includes a non-polar solvent and a non-ionic surfactant. The non-ionic surfactant is present in an amount ranging from about 0.5 wt % to about 20 wt % of a total weight of substrate used to form the digitally printed image. The post-treatment composition renders the digitally printed image deinkable.
摘要翻译： 用于数字印刷图像的后处理组合物包括非极性溶剂和非离子表面活性剂。 非离子表面活性剂以用于形成数字印刷图像的底物的总重量的约0.5重量％至约20重量％的量存在。 后处理组合使得数字打印的图像能够脱墨。
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公开(公告)号：US06791872B2
公开(公告)日：2004-09-14
申请号：US10652446
申请日：2003-08-29
IPC分类号： G11C1100
CPC分类号： G11C11/16 , H01L27/222
摘要： A write line structure for a magnetic memory cell includes a write conductor having a front surface facing the memory cell, a back surface and two sides surfaces. A cladding layer is disposed adjacent a portion of the front surface of the write conductor, with the cladding layer terminating at spaced first and second poles adjacent the front surface of the write conductor. A data storage layer is operatively positioned adjacent the cladding layer. The distance between the poles is less than the width of the write conductor. The width of the data storage layer may be greater than or less than the distance between the poles.
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公开(公告)号：US06785160B1
公开(公告)日：2004-08-31
申请号：US10425352
申请日：2003-04-29
IPC分类号： G11C1100
CPC分类号： G11C11/16
摘要： The invention includes a method of providing magnetic stability of a memory cell. The memory cell is generally located proximate to a conductive line, and proximate to a write mechanism that can set a magnetic state of the memory cell. The method includes receiving a representation of a maximum magnetic field intensity available from the write mechanism. A desirable placement of the memory cell relative to the conductive line can be generated for providing stability of the memory cell, while still allowing the write mechanism to change the magnetic state of the memory cell.
摘要翻译： 本发明包括提供存储单元的磁稳定性的方法。 存储单元通常位于导线附近，并且靠近能够设置存储单元的磁状态的写入机构。 该方法包括接收从写入机构可获得的最大磁场强度的表示。 可以产生存储单元相对于导线的理想布置，以便提供存储单元的稳定性，同时仍允许写入机构改变存储单元的磁状态。
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公开(公告)号：US06608790B2
公开(公告)日：2003-08-19
申请号：US09998216
申请日：2001-12-03
IPC分类号： G11C704
CPC分类号： G11C11/16
摘要： A memory device includes a memory array having a substrate, an array of memory cells disposed over the substrate, row conductors coupled to the memory cells, and column conductors coupled to the memory cells. The memory device also includes current sources that generate variable write currents in response to temperature changes in the memory array. The variable write currents are generated to accommodate the change in coercivities of the memory cells as the temperature of the array changes. A current source can include a temperature sensor that provides a continuous, immediate output to the current sensor to ensure accurate adjustment of a write current generated by the current source. There is no need to halt operation of the memory device to calibrate the current source. In addition, the current source provides an accurate adjustment to the write current because the temperature used by the temperature sensor to generate the output may be taken contemporaneously with generation of the write current.
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公开(公告)号：US06607924B2
公开(公告)日：2003-08-19
申请号：US09871387
申请日：2001-05-31
IPC分类号： H01L2100
CPC分类号： H01L43/12 , B82Y10/00 , G11C11/15 , H01L27/224
摘要： A solid-state memory including an array of magnetic storage cells and a set of conductors. The process steps that pattern the conductors also patterns the magnetic layers in the magnetic storage cells thereby avoiding the need to employ precise alignment between pattern masks.
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17.发明授权公开(公告)号：US06577549B1
公开(公告)日：2003-06-10
申请号：US10254559
申请日：2002-09-25
IPC分类号： G11C704
CPC分类号： G11C11/16
摘要： A memory device includes a memory array having a substrate, an array of memory cells disposed over the substrate, row conductors coupled to the memory cells, and column conductors coupled to the memory cells. The memory device also includes current sources that generate variable write currents in response to temperature changes in the memory array. The variable write currents are generated to accommodate the change in coercivities of the memory cells as the temperature of the array changes. A current source can include a temperature sensor that provides a continuous, immediate output to the current sensor to ensure accurate adjustment of a write current generated by the current source. There is no need to halt operation of the memory device to calibrate the current source. In addition, the current source provides an accurate adjustment to the write current because the temperature used by the temperature sensor to generate the output may be taken contemporaneously with generation of the write current.
摘要翻译： 存储器件包括具有衬底的存储器阵列，设置在衬底上的存储器单元阵列，耦合到存储器单元的行导体和耦合到存储器单元的列导体。 存储器件还包括响应于存储器阵列中的温度变化产生可变写入电流的电流源。 随着阵列温度的变化，产生可变写入电流以适应存储器单元的矫顽力变化。 电流源可以包括温度传感器，其向电流传感器提供连续的即时输出，以确保精确地调整由电流源产生的写入电流。 不需要停止存储器件的操作来校准电流源。 此外，电流源提供对写入电流的精确调整，因为温度传感器用于产生输出的温度可以同时产生写入电流。
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18.发明授权Magneto-resistive device including soft reference layer having embedded conductors 有权磁阻器件包括具有嵌入导体的软参考层公开(公告)号：US06504221B1
公开(公告)日：2003-01-07
申请号：US09963932
申请日：2001-09-25
IPC分类号： G11C1115
CPC分类号： G11C11/16 , B82Y10/00 , H01L27/222
摘要： A magnetic memory device includes a data ferromagnetic layer having a magnetization that can be oriented in either of two directions, a reference layer, and a spacer layer between the data and reference layers. The reference layer includes a dielectric layer, first and second conductors separated by the dielectric layer, and a ferromagnetic cladding on the first and second conductors. The memory device may be read by temporarily setting the magnetization of the reference layer to a known orientation, and determining a resistance state of the device.
摘要翻译： 磁存储器件包括具有可以在两个方向中的任一个方向上定向的磁化的数据铁磁层，参考层和数据和参考层之间的间隔层。 参考层包括电介质层，由电介质层分开的第一和第二导体以及第一和第二导体上的铁磁包层。 可以通过将参考层的磁化临时设置为已知取向来读取存储器件，并且确定器件的电阻状态。
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公开(公告)号：US07079438B2
公开(公告)日：2006-07-18
申请号：US10779909
申请日：2004-02-17
IPC分类号： G11C7/04
CPC分类号： G11C11/15 , G11C11/1675
摘要： This invention provides a controlled temperature, thermal-assisted magnetic memory device. In a particular embodiment, there is an array of SVM cells, each characterized by an alterable orientation of magnetization and including a material wherein the coercivity is decreased upon an increase in temperature. In addition, at least one reference SVM (RSVM) cell substantially similar to and in close proximity to the SVM cells of the array is provided. A provided feedback control temperature controller receives a feedback voltage from the reference SVM cell, corresponding to temperature, and adjusts power applied to the RSVM cell and SVM cell. An associated method of use is further provided.
摘要翻译： 本发明提供一种受控温度的热辅助磁存储器件。 在特定实施例中，存在SVM单元阵列，每个SVM单元的特征在于磁化方向的可变方向，并且包括其中矫顽力在温度升高时降低的材料。 此外，提供了与阵列的SVM单元基本相似并且非常接近的至少一个参考SVM（RSVM）单元。 提供的反馈控制温度控制器从参考SVM单元接收对应于温度的反馈电压，并调整施加到RSVM单元和SVM单元的功率。 还提供了相关联的使用方法。
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公开(公告)号：US06865107B2
公开(公告)日：2005-03-08
申请号：US10601895
申请日：2003-06-23
CPC分类号： G11C11/15
摘要： A magnetic memory array is described having a plurality of bit cells. Each bit cell includes at least one magnetic layer having free magnetic poles with a corresponding demagnetization field. A magnetic flux absorbing layer is disposed between at least two of the plurality of bit cells.
摘要翻译： 描述了具有多个位单元的磁存储器阵列。 每个位单元包括至少一个具有相应去磁场的具有自由磁极的磁性层。 磁通量吸收层设置在多个位单元中的至少两个位单元之间。
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