公开(公告)号：US06504221B1

公开(公告)日：2003-01-07

申请号：US09963932

申请日：2001-09-25

申请人： Lung T. Tran ,  Manish Sharma ,  Manoj K. Bhattacharyya

发明人： Lung T. Tran ,  Manish Sharma ,  Manoj K. Bhattacharyya

IPC分类号： G11C1115

CPC分类号： G11C11/16 ,  B82Y10/00 ,  H01L27/222

摘要： A magnetic memory device includes a data ferromagnetic layer having a magnetization that can be oriented in either of two directions, a reference layer, and a spacer layer between the data and reference layers. The reference layer includes a dielectric layer, first and second conductors separated by the dielectric layer, and a ferromagnetic cladding on the first and second conductors. The memory device may be read by temporarily setting the magnetization of the reference layer to a known orientation, and determining a resistance state of the device.

摘要翻译： 磁存储器件包括具有可以在两个方向中的任一个方向上定向的磁化的数据铁磁层，参考层和数据和参考层之间的间隔层。 参考层包括电介质层，由电介质层分开的第一和第二导体以及第一和第二导体上的铁磁包层。 可以通过将参考层的磁化临时设置为已知取向来读取存储器件，并且确定器件的电阻状态。

公开(公告)号：US06785160B1

公开(公告)日：2004-08-31

申请号：US10425352

申请日：2003-04-29

申请人： Manish Sharma ,  Manoj K. Bhattacharyya

发明人： Manish Sharma ,  Manoj K. Bhattacharyya

IPC分类号： G11C1100

CPC分类号： G11C11/16

摘要： The invention includes a method of providing magnetic stability of a memory cell. The memory cell is generally located proximate to a conductive line, and proximate to a write mechanism that can set a magnetic state of the memory cell. The method includes receiving a representation of a maximum magnetic field intensity available from the write mechanism. A desirable placement of the memory cell relative to the conductive line can be generated for providing stability of the memory cell, while still allowing the write mechanism to change the magnetic state of the memory cell.

摘要翻译： 本发明包括提供存储单元的磁稳定性的方法。 存储单元通常位于导线附近，并且靠近能够设置存储单元的磁状态的写入机构。 该方法包括接收从写入机构可获得的最大磁场强度的表示。 可以产生存储单元相对于导线的理想布置，以便提供存储单元的稳定性，同时仍允许写入机构改变存储单元的磁状态。

公开(公告)号：US07428347B2

公开(公告)日：2008-09-23

申请号：US10414927

申请日：2003-04-16

申请人： Manish Sharma ,  Manoj K. Bhattacharyya

发明人： Manish Sharma ,  Manoj K. Bhattacharyya

IPC分类号： G02F1/01

CPC分类号： H04B10/508

摘要： The invention includes an optical signal transmission transducer. The optical signal transmission transducer includes a magnetic tunnel junction. The magnetic tunnel junction can be tuned to switch states in response to selected frequencies of a magnetic field. A light source can be modulated based upon states of the magnetic tunnel junction. An alternate embodiment of the optical signal transmission transducer includes a light transducer that generates magnetic sense signals based upon reception of modulated light signals. The light transducer can be integrated with a magnetic tunnel junction. The magnetic tunnel junction can be tuned to switch states in response to selected frequencies of the magnetic sense signal.

摘要翻译： 本发明包括光信号传输换能器。 光信号传输换能器包括磁隧道结。 可以调谐磁隧道结以响应于选定的磁场频率来切换状态。 可以基于磁性隧道结的状态来调制光源。 光信号传输换能器的替代实施例包括一个光转换器，它根据接收调制的光信号产生磁感测信号。 光转换器可以与磁性隧道结结合。 可以调谐磁隧道结以响应于磁感测信号的选定频率来切换状态。

公开(公告)号：US06979998B2

公开(公告)日：2005-12-27

申请号：US10417054

申请日：2003-04-16

申请人： Manish Sharma ,  Manoj K. Bhattacharyya ,  Brian R. Short

发明人： Manish Sharma ,  Manoj K. Bhattacharyya ,  Brian R. Short

IPC分类号： H01L43/08 ,  H01L29/82 ,  H03H2/00 ,  H03H9/46 ,  G01R33/02

CPC分类号： H03H2/00

摘要： The invention includes a magnetic filter. The magnetic filter includes a magnetic transducer for generating a magnetic field in response to the plurality of information carrying signals. The magnetic filter further includes a magnetic tunnel junction. The magnetic tunnel junction can be tuned to switch states in response to selected frequencies of the magnetic field. The magnetic filter can further include a magnetic tunnel junction sensor for sensing the states of the magnetic tunnel junction.

摘要翻译： 本发明包括磁性过滤器。 磁性过滤器包括用于响应于多个信息携带信号产生磁场的磁换能器。 磁性过滤器还包括磁性隧道结。 可以调节磁性隧道结以响应于所选择的磁场频率来切换状态。 磁性过滤器还可以包括用于感测磁性隧道结的状态的磁性隧道结传感器。

公开(公告)号：US06693825B1

公开(公告)日：2004-02-17

申请号：US10349685

申请日：2003-01-23

申请人： Manish Sharma ,  Thomas C. Anthony ,  Lung T. Tran

发明人： Manish Sharma ,  Thomas C. Anthony ,  Lung T. Tran

IPC分类号： G11C1100

CPC分类号： G11C11/15 ,  G11C11/5607 ,  G11C2213/71

摘要： A memory cell includes a conductor clad with ferromagnetic material; first and second spacer layers on opposite sides of the clad conductor; a first data layer on the first spacer layer; and a second data layer on the second spacer layer.

摘要翻译： 存储单元包括用铁磁材料包覆的导体; 在包层导体的相对侧上的第一和第二间隔层; 第一间隔层上的第一数据层; 以及第二间隔层上的第二数据层。

公开(公告)号：US06483734B1

公开(公告)日：2002-11-19

申请号：US09992426

申请日：2001-11-26

申请人： Manish Sharma ,  Lung T. Tran

发明人： Manish Sharma ,  Lung T. Tran

IPC分类号： G11C1702

CPC分类号： H01L27/224 ,  G11C11/005 ,  G11C11/16 ,  G11C11/56 ,  G11C11/5607 ,  G11C11/5671 ,  G11C17/16 ,  G11C2216/26

摘要： A memory device includes memory cells having a re-writeable element and a write-once element in series with the re-writeable element. The re-writeable element is programmable between a high resistance state and a low resistance state. The write-once element can be an anti-fuse element that is programmable from a high resistance state to a low resistance state, or a fuse element that is programmable from a low resistance state to a high resistance state. The two possible states for the re-writeable element and the two possible states for the write-once element allow the memory cells to store four different bits.

摘要翻译： 存储器件包括具有可重写元件和与可重写元件串联的一次写入元件的存储器单元。 可重写元件可在高电阻状态和低电阻状态之间编程。 一次写入元件可以是可从高电阻状态到低电阻状态的可编程熔丝元件，或可从低电阻状态到高电阻状态的可编程熔丝元件。 可重写元件的两种可能状态和一次写入元件的两种可能状态允许存储单元存储四个不同的位。

公开(公告)号：US06891746B2

公开(公告)日：2005-05-10

申请号：US10351013

申请日：2003-01-25

申请人： Lung T. Tran ,  Manish Sharma

发明人： Lung T. Tran ,  Manish Sharma

IPC分类号： G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  G11C11/14

CPC分类号： G11C11/16

摘要： A magneto-resistive device includes first and second ferromagnetic layers having different coercivities, and a spacer layer between the first and second layers. Each ferromagnetic layer has a magnetization that can be oriented in either of two directions.

摘要翻译： 磁阻装置包括具有不同矫顽力的第一和第二铁磁层以及第一和第二层之间的间隔层。 每个铁磁层具有可以在两个方向中的任一方向上取向的磁化。

公开(公告)号：US06538920B2

公开(公告)日：2003-03-25

申请号：US09825093

申请日：2001-04-02

申请人： Manish Sharma ,  Lung T. Tran

发明人： Manish Sharma ,  Lung T. Tran

IPC分类号： G11C1114

CPC分类号： H01L43/08 ,  B82Y25/00 ,  G11C11/15 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3268 ,  H01L27/222

摘要： A magnetic memory cell having read conductor that is wholly clad with a high magnetic permeability soft magnetic material for a pinned-on-the-fly soft ferromagnetic reference layer is disclosed. The magnetic memory cell includes a ferromagnetic data layer, an intermediate layer formed on the ferromagnetic data layer, and a soft ferromagnetic reference layer formed on the intermediate layer. The soft ferromagnetic reference layer includes a read conductor and a ferromagnetic cladding that completely surrounds the read conductor to form a cladded read conductor. The soft ferromagnetic reference layer has a non-pinned orientation of magnetization. When an externally supplied read current flows through the read conductor, the read conductor generates a magnetic field that does not saturate the ferromagnetic cladding and is substantially contained within the ferromagnetic cladding and is operative to dynamically pin the orientation of magnetization in a desired direction. Optionally, the soft ferromagnetic reference layer can include a ferromagnetic cap layer positioned between the ferromagnetic cladding and the intermediate layer and magnetically coupled with the ferromagnetic cladding. A bit of data stored in the ferromagnetic data layer is read by measuring a resistance between the ferromagnetic data layer and the soft ferromagnetic reference layer. The ferromagnetic cladding substantially reduces fringe magnetic fields, reduces the number and complexity of the of layers needed to form a prior pinned reference layer, and reduces a magnitude of the read current sufficient to read the bit of data.

摘要翻译： 公开了一种具有读取导体的磁存储单元，其全部包裹有用于固定在飞行中的软铁磁参考层的高磁导率软磁材料。 磁存储单元包括铁磁数据层，形成在铁磁数据层上的中间层和形成在中间层上的软铁磁参考层。 软铁磁参考层包括完全包围读取导体以形成包层读取导体的读取导体和铁磁包层。 软铁磁参考层具有非固定取向的磁化。 当外部提供的读取电流流过读取导体时，读取导体产生不使铁磁性包层饱和并且基本上包含在铁磁包层内的磁场，并且可操作以在期望的方向上动态地引导磁化取向。 可选地，软铁磁参考层可以包括位于铁磁包层和中间层之间并与铁磁包层磁耦合的铁磁盖层。 通过测量铁磁数据层和软铁磁参考层之间的电阻来读取存储在铁磁数据层中的一些数据。 铁磁包层基本上减少了边缘磁场，减少了形成先前固定参考层所需的层的数量和复杂性，并且减小了足以读取数据位的读取电流的大小。

公开(公告)号：US06473337B1

公开(公告)日：2002-10-29

申请号：US09983404

申请日：2001-10-24

申请人： Lung T. Tran ,  Manish Sharma ,  Thomas C. Anthony

发明人： Lung T. Tran ,  Manish Sharma ,  Thomas C. Anthony

IPC分类号： G11C1115

CPC分类号： H01L27/222 ,  G11C11/15

摘要： A memory device includes dual tunnel junction memory cells having a magnetic tunnel junction in series with a tunnel junction. The magnetic tunnel junction can be changed from a first resistance state to a second resistance state during a write operation. The magnetic tunnel junction can have a differing resistance-voltage characteristic than the tunnel junction, and the differing resistance-voltage characteristics allow the magnetic tunnel junction to be blown without blowing the tunnel junction during a write operation. The change in resistance state of the magnetic tunnel junction changes the resistance of the selected memory cell, which is detectable during a read operation.

摘要翻译： 存储器件包括双隧道结存储器单元，其具有与隧道结串联的磁性隧道结。 在写入操作期间，磁性隧道结可以从第一电阻状态改变到第二电阻状态。 磁性隧道结可以具有与隧道结不同的电阻 - 电压特性，并且不同的电阻 - 电压特性允许磁性隧道结在写入操作期间不会吹动隧道结而被吹动。 磁性隧道结的电阻状态的改变改变了所选择的存储单元的电阻，这在读取操作期间是可检测的。

公开(公告)号：US06885573B2

公开(公告)日：2005-04-26

申请号：US10098206

申请日：2002-03-15

申请人： Manish Sharma ,  Lung T. Tran

发明人： Manish Sharma ,  Lung T. Tran

IPC分类号： G11C11/00 ,  G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  G11C17/06

CPC分类号： H01L27/224 ,  G11C11/00 ,  G11C11/15 ,  G11C11/16

摘要： A data storage device is disclosed that has a plurality of word lines, a plurality of bit lines, and a resistive crosspoint array of memory cells. Each memory cell is connected to a bit line and connected to an isolation diode that further connects to a respective word line. The isolation diode provides a unidirectional conductive path from the bit line to the word line. Each word line provides a common metal-semiconductor contact with each diode sharing the word line such that each diode has a separate metal contact located between the semiconductor portion of the common metal-semiconductor contact and its respective memory cell.

摘要翻译： 公开了一种数据存储装置，其具有多个字线，多个位线和存储器单元的电阻交叉点阵列。 每个存储单元连接到位线并连接到进一步连接到相应字线的隔离二极管。 隔离二极管提供从位线到字线的单向导电路径。 每个字线提供与共享字线的每个二极管共同的金属 - 半导体接触，使得每个二极管具有位于公共金属 - 半导体触点的半导体部分和其相应存储单元之间的单独的金属触点。