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公开(公告)号:US10742916B2
公开(公告)日:2020-08-11
申请号:US16094165
申请日:2017-04-06
Applicant: IMEC VZW
Inventor: Jonathan Borremans , Nicolaas Tack , Maarten Rosmeulen , Paul Goetschalckx , Piet De Moor
Abstract: An imaging sensor is disclosed, comprising: a set of at least two charge-coupled device, CCD, sub-arrays, wherein each sub-array comprises pixels arranged in columns and rows, and each pixel being arranged to accumulate an electric charge proportional to an intensity of light incident on the pixel; a time delay and integration, TDI, clocking circuitry for controlling and timing transfer of accumulated electric charges between rows of pixels in a column direction in order to integrate the accumulated electric charges in each column of pixels; wherein each CCD sub-array further comprises a readout row for converting the integrated electric charge of each column of pixels into voltage or current, wherein the readout row comprises transistors enabling readout of the signal by the readout block; and a readout block which is arranged to receive input from selected readout rows and convert the input into digital domain or convert the input to a combined representation of pixel values based on the set of CCD sub-arrays.
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公开(公告)号:US20160173804A1
公开(公告)日:2016-06-16
申请号:US14965714
申请日:2015-12-10
Applicant: IMEC VZW , Vrije Universiteit Brussel
Inventor: Jonathan Borremans , Linkun Wu
IPC: H04N5/3745 , H04N5/369
CPC classification number: H04N5/3745 , H04N5/3559 , H04N5/3698 , H04N5/37452
Abstract: A pixel for converting incident subatomic particles into an output voltage signal is disclosed. In one aspect, the pixel includes a photo-detector adapted to receive incident subatomic particles and generate an input voltage signal corresponding to an intensity of the received particles. The pixel also includes a passive amplifier adapted to passively amplify the input voltage signal to generate an output voltage signal. The passive amplification reduces the noise of the output voltage signal, and may have a higher quantum efficiency than typical in-pixel amplification devices and methods.
Abstract translation: 公开了一种用于将入射的亚原子粒子转换为输出电压信号的像素。 在一个方面,像素包括适于接收入射的亚原子粒子并产生对应于接收的粒子的强度的输入电压信号的光电检测器。 像素还包括被动放大器,其被动放大输入电压信号以产生输出电压信号。 无源放大降低了输出电压信号的噪声,并且可能比典型的像素内放大器件和方法具有更高的量子效率。
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公开(公告)号:US20200021765A1
公开(公告)日:2020-01-16
申请号:US16458641
申请日:2019-07-01
Applicant: IMEC VZW
Inventor: Annachiara Spagnolo , Jonathan Borremans
Abstract: Example embodiments relate to an image sensor and a method for read-out of pixel signal. One embodiment includes an image sensor. The image sensor includes an array of pixels for detecting light incident on the pixel. The image sensor also includes an in-pixel correlated double sampling (CDS) circuitry. The image sensor also includes a column line that extends along and is associated with a column of pixels in the array of pixels. The column line is configured to selectively receive a pixel signal from a pixel in the column. Further, the image sensor includes a voltage-drop correction line that extends along and is associated with the column of pixels. The voltage-drop correction line is configured to provide a correction voltage signal to a pixel in the column such that corrects for voltage drop of the pixel signal in read-out through the column line.
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公开(公告)号:US09313428B2
公开(公告)日:2016-04-12
申请号:US14574383
申请日:2014-12-17
Applicant: IMEC VZW
Inventor: Jonathan Borremans , Koen De Munck
IPC: H01L27/148 , H04N5/359 , H04N5/355 , H04N5/357 , H04N5/3745
CPC classification number: H04N5/3591 , H04N5/3559 , H04N5/3575 , H04N5/3598 , H04N5/37452
Abstract: Described herein is a pixel readout circuit which provides readout at two sensitivity levels depending on the amount of electrons generated by a pixel photodiode in the circuit. A floating diffusion capacitor operates to store charge up to a saturation value determined by its capacitance and an overflow capacitor is provided in an overflow region for storing charge above the saturation value of the floating diffusion capacitor. Readout at a high sensitivity level is provided when the floating diffusion capacitor is not saturated and readout at a lower sensitivity level is provided when there is saturation and subsequent overflow to the overflow region. Connection of the floating diffusion capacitor to the overflow capacitor shares the charge over the combined capacitance of the two capacitors and provides readout at a lower sensitivity without loss of charge.
Abstract translation: 这里描述的像素读出电路根据由电路中的像素光电二极管产生的电子量提供两个灵敏度级别的读出。 浮动扩散电容器用于将电荷存储到由其电容确定的饱和值,并且溢出电容器设置在用于存储高于浮动扩散电容器的饱和值的电荷的溢出区域中。 当浮动扩散电容器不饱和并且当存在饱和并且随后溢出到溢出区域时,在较低灵敏度级别读出时,提供高灵敏度级别的读出。 将浮动扩散电容器连接到溢出电容器上的两个电容器的组合电容共享电荷,并以较低的灵敏度提供读数而不会损失电荷。
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公开(公告)号:US20150189199A1
公开(公告)日:2015-07-02
申请号:US14574383
申请日:2014-12-17
Applicant: IMEC VZW
Inventor: Jonathan Borremans , Koen De Munck
IPC: H04N5/359
CPC classification number: H04N5/3591 , H04N5/3559 , H04N5/3575 , H04N5/3598 , H04N5/37452
Abstract: Described herein is a pixel readout circuit which provides readout at two sensitivity levels depending on the amount of electrons generated by a pixel photodiode in the circuit. A floating diffusion capacitor operates to store charge up to a saturation value determined by its capacitance and an overflow capacitor is provided in an overflow region for storing charge above the saturation value of the floating diffusion capacitor. Readout at a high sensitivity level is provided when the floating diffusion capacitor is not saturated and readout at a lower sensitivity level is provided when there is saturation and subsequent overflow to the overflow region. Connection of the floating diffusion capacitor to the overflow capacitor shares the charge over the combined capacitance of the two capacitors and provides readout at a lower sensitivity without loss of charge.
Abstract translation: 这里描述的像素读出电路根据由电路中的像素光电二极管产生的电子量提供两个灵敏度级别的读出。 浮动扩散电容器用于将电荷存储到由其电容确定的饱和值,并且溢出电容器设置在用于存储高于浮动扩散电容器的饱和值的电荷的溢出区域中。 当浮动扩散电容器不饱和并且当存在饱和并且随后溢出到溢出区域时,在较低灵敏度级别读出时,提供高灵敏度级别的读出。 将浮动扩散电容器连接到溢出电容器上的两个电容器的组合电容共享电荷,并以较低的灵敏度提供读数而不会损失电荷。
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