公开(公告)号：US20190356308A1

公开(公告)日：2019-11-21

申请号：US16414609

申请日：2019-05-16

Applicant: IMEC vzw

Inventor： Daniele Garbin ,  Robin Degraeve ,  Ludovic Goux

IPC: H03K17/0412 ,  H01L45/00

Abstract: The disclosed technology generally relates to a switching device and more particularly to a switching device based on an active portion capable of switching from an insulating state to a conductive state. In an aspect, a switching device comprises an active portion interposed between two electrodes and capable of switching from an insulating state to a conducting state when a voltage higher than a threshold value is applied between the two electrodes. The threshold value is lowered by a dielectric permittivity distribution which produces a concentration of electrical field at a location within the active portion. Thus, the switching device may be devoid of a third control electrode.

公开(公告)号：US20170346005A1

公开(公告)日：2017-11-30

申请号：US15165903

申请日：2016-05-26

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven, KU LEUVEN R&D

Inventor： Ludovic Goux ,  Andrea Fantini ,  Chao-Yang Chen

IPC: H01L45/00

CPC classification number: H01L45/146 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1616

Abstract: A Resistive Random Access Memory (RRAM) device and a method of its manufacture are disclosed. The RRAM device comprises a lower oxygen affinity bottom electrode, a hygroscopic solid-state dielectric layer, comprising hydroxyl groups, and a higher oxygen affinity top electrode. In some embodiments, the hygroscopic solid-state dielectric layer is a rare-earth metal oxide layer.

公开(公告)号：US09685229B2

公开(公告)日：2017-06-20

申请号：US14957249

申请日：2015-12-02

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven, KU LEUVEN R&D

Inventor： Ludovic Goux ,  Attilio Belmonte

IPC: G11C11/00 ,  G11C13/00 ,  G11C11/56 ,  H01L45/00 ,  H01L27/24

CPC classification number: G11C13/0069 ,  G11C11/5614 ,  G11C13/0011 ,  G11C2013/0078 ,  G11C2013/0083 ,  G11C2013/0088 ,  G11C2013/0092 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146

Abstract: A method is disclosed for operating a Conductive Bridge Random Access Memory (CBRAM) device that includes an electrolyte element sandwiched between a cation supply top electrode and a bottom electrode. The method comprises conditioning the CBRAM device by applying a forming current pulse having a pulse width (tf) of 100 ns or less and a pulse amplitude (If) of 10 uA or less, and when programming, setting the conditioned CBRAM device to a Low Resistance State (LRS) by applying a set current pulse having a pulse width (ts) of 100 ns or less and a pulse amplitude (Is) equal to or larger than the forming current pulse amplitude (If).

公开(公告)号：US20160181518A1

公开(公告)日：2016-06-23

申请号：US14955928

申请日：2015-12-01

Applicant: KATHOLIEKE UNIVERSITEIT LEUVEN, KU LEUVEN R&D ,  IMEC VZW

Inventor： Ludovic Goux ,  Attilio Belmonte

IPC: H01L45/00

CPC classification number: H01L45/085 ,  G11C13/0011 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/141 ,  H01L45/146 ,  H01L45/1608

Abstract: A Conductive Bridge Random Access Memory (CBRAM) device comprising an insulating electrolyte element sandwiched between a cation supply electrode and a bottom electrode, whereby the conductivity σ of the cation provided by the cation supply electrode in the electrolyte element increases towards the bottom electrode.

Abstract translation: 一种导电桥随机存取存储器（CBRAM）装置，包括夹在阳离子供应电极和底电极之间的绝缘电解质元件， 由电解质元件中的阳离子供给电极提供的阳离子朝向底部电极增加。