公开(公告)号：US09443588B2

公开(公告)日：2016-09-13

申请号：US14749651

申请日：2015-06-25

Applicant: Industrial Technology Research Institute

Inventor： Pei-Ling Tseng ,  Chia-Chen Kuo ,  Shyh-Shyuan Sheu ,  Meng-Fan Chang

IPC: G11C11/00 ,  G11C11/36 ,  G11C13/00

CPC classification number: G11C13/0097 ,  G11C13/0023 ,  G11C13/0026 ,  G11C13/0028 ,  G11C13/0061 ,  G11C13/0069 ,  G11C2013/0071 ,  G11C2213/79

Abstract: A resistive memory system, a driver circuit thereof and a method for setting resistances thereof are provided. The resistive memory system includes a memory array, a row selection circuit, a first control circuit and a second control circuit. The memory array has a plurality of resistive memory cells. The row selection circuit is used for activating the resistive memory cells. The first control circuit and the second control circuit are coupled to the resistive memory cells. When each of resistive memory cells is set, the first control circuit and the second control circuit respectively provide a set voltage and a ground voltage to the each of resistive memory cells to form a set current, and the set current is clamped by at least one of the first control circuit and the second control circuit.

Abstract translation: 提供了一种电阻式存储器系统，其驱动电路及其电阻设定方法。 电阻式存储器系统包括存储器阵列，行选择电路，第一控制电路和第二控制电路。 存储器阵列具有多个电阻存储单元。 行选择电路用于激活电阻式存储单元。 第一控制电路和第二控制电路耦合到电阻存储器单元。 当每个电阻性存储器单元被设置时，第一控制电路和第二控制电路分别向每个电阻存储器单元提供一个设定电压和一个接地电压以形成一个设定电流，并且将该设定电流钳位在至少一个 的第一控制电路和第二控制电路。

公开(公告)号：US20140184322A1

公开(公告)日：2014-07-03

申请号：US13902988

申请日：2013-05-28

Applicant: Industrial Technology Research Institute

Inventor： Pei-Ling Tseng ,  Keng-Li Su

IPC: H01L23/48 ,  H01L25/065

CPC classification number: H01L25/0657 ,  H01L2225/06544 ,  H01L2225/06596 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A through silicon via (TSV) repair circuit is provided. The TSV repair circuit includes at least two transmission control switches and at least two transmission path modules. Two transmission control switches transmit an input signal of a first chip or a second chip to one of two terminals in each of the transmission path modules according to a switch signal. Each transmission path module includes at least two data path circuits and corresponding TSVs. Each data path circuit includes an input driving circuit, a short-circuit detection circuit and a leakage current cancellation circuit. The short-circuit detection circuit detects whether to detect whether short-circuit on the TSV and a silicon substrate is present and generate a short-circuit detection output signal. The leakage current cancellation circuit to avoid a leakage current generated by a first level voltage to flow into the silicon substrate according to the short-circuit detection output signal.

Abstract translation: 提供了硅通孔（TSV）修复电路。 TSV修复电路包括至少两个传输控制开关和至少两个传输路径模块。 两个传输控制开关根据开关信号将第一芯片或第二芯片的输入信号发送到每个传输路径模块中的两个终端中的一个终端。 每个传输路径模块包括至少两个数据路径电路和相应的TSV。 每个数据路径电路包括输入驱动电路，短路检测电路和泄漏电流消除电路。 短路检测电路检测是否检测出TSV上的短路和硅衬底是否存在，并产生短路检测输出信号。 泄漏电流消除电路，以避免由第一电平电压产生的漏电流根据短路检测输出信号流入硅衬底。

公开(公告)号：US20140175606A1

公开(公告)日：2014-06-26

申请号：US13974909

申请日：2013-08-23

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Sih-Han Li ,  Pei-Ling Tseng ,  Zhe-Hui Lin ,  Chih-Sheng Lin

IPC: H01L49/02

CPC classification number: H01L23/481 ,  H01L27/0808 ,  H01L29/93 ,  H01L29/94 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A varactor is provided. A substrate includes a first surface, a second surface and a first opening and a second opening in the substrate. A conductive material is filling the first and second openings, to form a first through-wafer via (TWV) and a second through-wafer via. A first capacitor is coupled between the first through-wafer via and a first terminal. A second capacitor is coupled between the second through-wafer via and a second terminal. A capacitance of a depletion-region capacitor between the first through-wafer via and the second through-wafer via is determined by a bias voltage applied to the first through-wafer via and the second through-wafer via.

Abstract translation: 提供变容二极管。 衬底包括衬底中的第一表面，第二表面和第一开口以及第二开口。 导电材料填充第一和第二开口，以形成第一贯穿晶片通孔（TWV）和第二通晶片通孔。 第一电容器耦合在第一通晶片通孔和第一端子之间。 第二电容器耦合在第二通晶片通孔和第二端子之间。 第一贯穿晶片通孔和第二贯通晶片通孔之间的耗尽区电容器的电容由施加到第一贯穿晶片通孔和第二贯通晶片通孔的偏置电压决定。

公开(公告)号：US09219479B2

公开(公告)日：2015-12-22

申请号：US13867122

申请日：2013-04-21

Applicant: Industrial Technology Research Institute

Inventor： Pei-Ling Tseng ,  Keng-Li Su

IPC: H03K19/00 ,  H03K19/003

CPC classification number: H03K19/003 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A through silicon via (TSV) repair circuit of a semiconductor apparatus is provided. The TSV repair circuit includes a first chip, at least one second chip, at least two TSVs, at least two data path circuits, and an output logic circuit. Each data path circuit includes an input driving circuit, a short-circuit detection circuit, a bias circuit, and a leakage current cancellation circuit. The input driving circuit transforms an input signal into a pending signal and transmits the pending signal to a first terminal of the corresponding TSV. The short-circuit detection circuit detects a short circuit between the corresponding TSV and a silicon substrate according to the input signal and the first terminal of the TSV and generates a short-circuit detection output signal. The leakage current cancellation circuit prevents a leakage current produced by a first level voltage from entering the silicon substrate according to the short-circuit detection output signal.

Abstract translation: 提供半导体装置的硅通孔（TSV）修复电路。 TSV修复电路包括第一芯片，至少一个第二芯片，至少两个TSV，至少两个数据路径电路和输出逻辑电路。 每个数据路径电路包括输入驱动电路，短路检测电路，偏置电路和泄漏电流消除电路。 输入驱动电路将输入信号变换为未决信号，并将未决信号发送到相应TSV的第一终端。 短路检测电路根据输入信号和TSV的第一端检测相应的TSV与硅衬底之间的短路，并产生短路检测输出信号。 泄漏电流消除电路防止由第一电平电压产生的漏电流根据短路检测输出信号进入硅衬底。

公开(公告)号：US09076771B2

公开(公告)日：2015-07-07

申请号：US13974909

申请日：2013-08-23

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Sih-Han Li ,  Pei-Ling Tseng ,  Zhe-Hui Lin ,  Chih-Sheng Lin

IPC: H01L29/93 ,  H01L23/48 ,  H01L27/08 ,  H01L29/94

CPC classification number: H01L23/481 ,  H01L27/0808 ,  H01L29/93 ,  H01L29/94 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A varactor is provided. A substrate includes a first surface, a second surface and a first opening and a second opening in the substrate. A conductive material is filling the first and second openings, to form a first through-wafer via (TWV) and a second through-wafer via. A first capacitor is coupled between the first through-wafer via and a first terminal. A second capacitor is coupled between the second through-wafer via and a second terminal. A capacitance of a depletion-region capacitor between the first through-wafer via and the second through-wafer via is determined by a bias voltage applied to the first through-wafer via and the second through-wafer via.

Abstract translation: 提供变容二极管。 衬底包括衬底中的第一表面，第二表面和第一开口以及第二开口。 导电材料填充第一和第二开口，以形成第一贯穿晶片通孔（TWV）和第二通晶片通孔。 第一电容器耦合在第一通晶片通孔和第一端子之间。 第二电容器耦合在第二通晶片通孔和第二端子之间。 第一贯穿晶片通孔和第二贯通晶片通孔之间的耗尽区电容器的电容由施加到第一贯穿晶片通孔和第二贯通晶片通孔的偏置电压决定。