公开(公告)号：US11569126B2

公开(公告)日：2023-01-31

申请号：US17061062

申请日：2020-10-01

Applicant: Intel Corporation

Inventor： Hui Jae Yoo ,  Tejaswi K. Indukuri ,  Ramanan V. Chebiam ,  James S. Clarke

IPC: H01L21/768 ,  H01L23/532

Abstract: A dielectric layer and a method of forming thereof. An opening defined in a dielectric layer and a wire deposited within the opening, wherein the wire includes a core material surrounded by a jacket material, wherein the jacket material exhibits a first resistivity ρ1 and the core material exhibits a second resistivity ρ2 and ρ2 is less than ρ1.

公开(公告)号：US11328993B2

公开(公告)日：2022-05-10

申请号：US16881530

申请日：2020-05-22

Applicant: Intel Corporation

Inventor： Christopher J. Jezewski ,  Tejaswi K. Indukuri ,  Ramanan V. Chebiam ,  Colin T. Carver

IPC: H01L23/532 ,  H01L21/768 ,  H01L29/49 ,  H01L29/78 ,  H01L23/522

Abstract: An embodiment includes a metal interconnect structure, comprising: a dielectric layer disposed on a substrate; an opening in the dielectric layer, wherein the opening has sidewalls and exposes a conductive region of at least one of the substrate and an interconnect line; an adhesive layer, comprising manganese, disposed over the conductive region and on the sidewalls; and a fill material, comprising cobalt, within the opening and on a surface of the adhesion layer. Other embodiments are described herein.

公开(公告)号：US11094587B2

公开(公告)日：2021-08-17

申请号：US15570857

申请日：2015-06-03

Applicant: Intel Corporation

Inventor： Christopher J. Jezewski ,  Srijit Mukherjee ,  Daniel B. Bergstrom ,  Tejaswi K. Indukuri ,  Flavio Griggio ,  Ramanan V. Chebiam ,  James S. Clarke

IPC: H01L23/48 ,  H01L21/4763 ,  H01L21/44 ,  H01L21/768 ,  H01L23/532 ,  H01L23/528 ,  H01L23/522

Abstract: In one embodiment, a conductive connector for a microelectronic component may be formed with a noble metal layer, acting as an adhesion/wetting layer, disposed between a barrier liner and a conductive fill material. In a further embodiment, the conductive connector may have a noble metal conductive fill material disposed directly on the barrier liner. The use of a noble metal as an adhesion/wetting layer or as a conductive fill material may improve gapfill and adhesion, which may result in the conductive connector being substantially free of voids, thereby improving the electrical performance of the conductive connector relative to conductive connectors without a noble metal as the adhesion/wetting layer or the conductive fill material.

公开(公告)号：US20190074217A1

公开(公告)日：2019-03-07

申请号：US16072145

申请日：2016-02-25

Applicant: Intel Corporation

Inventor： Christopher J. Jezewski ,  Ramanan V. Chebiam ,  Jasmeet S. Chawla ,  Mauro J. Kobrinsky ,  James S. Clarke

IPC: H01L21/768 ,  H01L21/288 ,  H01L23/532 ,  C23C18/40

Abstract: A conductive connector for a microelectronic structure may be formed in an opening in a dielectric layer, wherein a ruthenium/aluminum-containing liner is disposed between the dielectric layer and a substantially aluminum-free copper fill material within the opening. The ruthenium/aluminum-containing liner may be formed by depositing a ruthenium-containing liner and migrating aluminum into the ruthenium-containing liner with an annealing process. The aluminum may be presented as a layer formed either before or after the deposition of a copper fill material, or may be presented within a copper/aluminum alloy fill material wherein the annealing process migrates the aluminum out of the copper/aluminum alloy and into the ruthenium-containing liner.

公开(公告)号：US09385085B2

公开(公告)日：2016-07-05

申请号：US14855792

申请日：2015-09-16

Applicant: INTEL CORPORATION

Inventor： Manish Chandhok ,  Hui Jae Yoo ,  Christopher J. Jezewski ,  Ramanan V. Chebiam ,  Colin T. Carver

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/532 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528

CPC classification number: H01L23/53238 ,  H01L21/7682 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76882 ,  H01L21/76883 ,  H01L23/5222 ,  H01L23/5283 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A metallization layer including a fully clad interconnect and a method of forming a fully clad interconnect. An opening is formed in a dielectric layer, wherein the dielectric layer has a surface and the opening includes walls and a bottom. A diffusion barrier layer and an adhesion layer are deposited on the dielectric layer. An interconnect material is deposited on the dielectric layer and reflowed into the opening forming an interconnect. An adhesion capping layer and diffusion barrier capping layer are deposited over the interconnect. The interconnect is surrounded by the adhesion layer and the adhesion capping layer and the adhesion layer and the adhesion capping layer are surrounded by the diffusion barrier layer and the diffusion capping layer.