公开(公告)号：US20180219122A1

公开(公告)日：2018-08-02

申请号：US15420403

申请日：2017-01-31

Applicant: International Business Machines Corporation

Inventor： NING LI ,  QINGLONG LI ,  KUNAL MUKHERJEE ,  DEVENDRA K. SADANA ,  GHAVAM G. SHAHIDI

IPC: H01L33/00 ,  H01L33/06 ,  H01L33/12

CPC classification number: H01L33/0062 ,  H01L29/122 ,  H01L29/127 ,  H01L33/0025 ,  H01L33/06 ,  H01L33/12

Abstract: Provided is a light emitting semiconductor structure that operates as a light emitting diode (LED). In embodiments of the invention, the light emitting semiconductor structure includes a first barrier region, a second barrier region, and a single quantum well having a preselected thickness between the first barrier region and the second barrier region. The preselected thickness according to embodiments is selected to achieve a predetermined charge density in the quantum well. The predetermined charge density according to embodiments results from a predetermined bias current applied to the semiconductor structure. The predetermined bias current according to embodiments comprises less than about 1 mA.

公开(公告)号：US20160087577A1

公开(公告)日：2016-03-24

申请号：US14495559

申请日：2014-09-24

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  KING ABDULAZIZ CITY FOR SCIENCE AND TECHNOLOGY

Inventor： ABDULRAHMAN ALBADRI ,  STEPHEN BEDELL ,  NING LI ,  DEVENDRA SADANA ,  KATHERINE L. SAENGER ,  ABDELMAJID SALHI ,  DAVOOD SHAHRJERDI

IPC: H01L31/042 ,  H01L31/0232 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/0352 ,  H01L31/0224

CPC classification number: H01L31/1804 ,  H01L31/035281 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell includes a p-type semiconductor substrate including a plurality of thin absorption regions and a plurality of thick absorption regions. The plurality of thin absorption regions and the plurality of thick absorption regions are coplanar on a bottom side thereof. An n-type semiconductor layer is disposed over a top side of the p-type semiconductor substrate. The n-type semiconductor layer has a substantially uniform thickness. Metallurgy is disposed on top of the n-type semiconductor layer. The plurality of thin absorption regions are sufficiently thin to render the semiconductor substrate flexible.

Abstract translation: 太阳能电池包括包括多个薄吸收区域和多个厚吸收区域的p型半导体衬底。 多个薄吸收区域和多个厚吸收区域在其底侧共面。 n型半导体层设置在p型半导体衬底的顶侧上。 n型半导体层的厚度基本均匀。 冶金设置在n型半导体层的顶部。 多个薄吸收区域足够薄以使半导体衬底柔性。