公开(公告)号：US09685504B2

公开(公告)日：2017-06-20

申请号：US15253070

申请日：2016-08-31

Applicant: Infineon Technologies AG

Inventor： Andreas Haertl ,  Frank Hille ,  Francisco Javier Santos Rodriguez ,  Daniel Schloegl ,  Andre Rainer Stegner ,  Christoph Weiss

IPC: H01L29/00 ,  H01L21/22 ,  H01L21/38 ,  H01L29/06 ,  H01L29/78 ,  H01L29/739 ,  H01L29/66 ,  H01L29/10 ,  H01L29/32 ,  H01L21/285 ,  H01L29/167 ,  H01L29/861 ,  H01L21/265

CPC classification number: H01L29/063 ,  H01L21/26506 ,  H01L21/28568 ,  H01L29/0607 ,  H01L29/1095 ,  H01L29/167 ,  H01L29/32 ,  H01L29/36 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66136 ,  H01L29/66325 ,  H01L29/66333 ,  H01L29/66674 ,  H01L29/7393 ,  H01L29/7395 ,  H01L29/7801 ,  H01L29/861

Abstract: A semiconductor device includes a first semiconductor region having first charge carriers of a first conductivity type and a second semiconductor region having second charge carriers. The first semiconductor region includes a transition region in contact with the second semiconductor region, the transition region having a first concentration of the first charge carriers, a contact region having a second concentration of the first charge carriers, wherein the second concentration is higher than the first concentration, and a damage region between the contact region and the transition region. The damage region is configured for reducing lifetime and/or mobility of the first charge carriers of the damage region as compared to the lifetime and/or the mobility of the first charge carriers of the contact region and the transition region.

公开(公告)号：US20160372539A1

公开(公告)日：2016-12-22

申请号：US15253070

申请日：2016-08-31

Applicant: Infineon Technologies AG

Inventor： Andreas Haertl ,  Frank Hille ,  Francisco Javier Santos Rodriguez ,  Daniel Schloegl ,  Andre Rainer Stegner ,  Christoph Weiss

IPC: H01L29/06 ,  H01L29/167 ,  H01L29/66 ,  H01L29/861

CPC classification number: H01L29/063 ,  H01L21/26506 ,  H01L21/28568 ,  H01L29/0607 ,  H01L29/1095 ,  H01L29/167 ,  H01L29/32 ,  H01L29/36 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66136 ,  H01L29/66325 ,  H01L29/66333 ,  H01L29/66674 ,  H01L29/7393 ,  H01L29/7395 ,  H01L29/7801 ,  H01L29/861

Abstract: A semiconductor device includes a first semiconductor region having first charge carriers of a first conductivity type and a second semiconductor region having second charge carriers. The first semiconductor region includes a transition region in contact with the second semiconductor region, the transition region having a first concentration of the first charge carriers, a contact region having a second concentration of the first charge carriers, wherein the second concentration is higher than the first concentration, and a damage region between the contact region and the transition region. The damage region is configured for reducing lifetime and/or mobility of the first charge carriers of the damage region as compared to the lifetime and/or the mobility of the first charge carriers of the contact region and the transition region.

Abstract translation: 半导体器件包括具有第一导电类型的第一电荷载流子的第一半导体区域和具有第二电荷载流子的第二半导体区域。 第一半导体区域包括与第二半导体区域接触的过渡区域，该过渡区域具有第一电荷载流子的第一浓度，具有第二浓度的第一电荷载流子的接触区域，其中第二浓度高于 第一浓度，以及接触区域和过渡区域之间的损伤区域。 损伤区域被配置为与接触区域和过渡区域的第一电荷载流子的寿命和/或迁移率相比，减小损伤区域的第一电荷载体的寿命和/或迁移率。

公开(公告)号：US09385181B2

公开(公告)日：2016-07-05

申请号：US14162311

申请日：2014-01-23

Applicant: Infineon Technologies AG

Inventor： Hans Peter Felsl ,  Elmar Falck ,  Manfred Pfaffenlehner ,  Frank Hille ,  Andreas Haertl ,  Holger Schulze ,  Daniel Schloegl

IPC: H01L29/861 ,  H01L29/06 ,  H01L29/66 ,  H01L29/36 ,  H01L29/16 ,  H01L29/20

CPC classification number: H01L29/0603 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/36 ,  H01L29/66128 ,  H01L29/8611

Abstract: A semiconductor diode includes a semiconductor body having opposite first and second sides. A first and a second semiconductor region are consecutively arranged along a lateral direction at the second side. The first and second semiconductor regions are of opposite first and second conductivity types and are electrically coupled to an electrode at the second side. The semiconductor diode further includes a third semiconductor region of the second conductivity type buried in the semiconductor body at a distance from the second side. The second and third semiconductor regions are separated from each other.

Abstract translation: 半导体二极管包括具有相反的第一和第二侧面的半导体本体。 第一和第二半导体区域沿着第二侧的横向连续地布置。 第一和第二半导体区域具有相反的第一和第二导电类型，并且在第二侧电耦合到电极。 半导体二极管还包括第二导电类型的第三半导体区域，该第二半导体区域埋在半导体本体中距离第二侧一定距离。 第二和第三半导体区域彼此分离。

公开(公告)号：US20150214347A1

公开(公告)日：2015-07-30

申请号：US14165658

申请日：2014-01-28

Applicant: Infineon Technologies AG

Inventor： Elmar Falck ,  Andreas Haertl ,  Manfred Pfaffenlehner ,  Francisco Javier Santos Rodriguez ,  Daniel Schloegl ,  Hans-Joachim Schulze ,  Andre Stegner ,  Johannes Georg Laven

IPC: H01L29/739 ,  H01L29/06 ,  H01L29/66 ,  H01L21/265 ,  H01L21/324 ,  H01L29/861 ,  H01L29/10

CPC classification number: H01L29/7395 ,  H01L21/263 ,  H01L21/265 ,  H01L21/324 ,  H01L29/0615 ,  H01L29/0623 ,  H01L29/0834 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/36 ,  H01L29/6609 ,  H01L29/66128 ,  H01L29/66333 ,  H01L29/861 ,  H01L29/8611

Abstract: A semiconductor device includes a semiconductor body having opposite first and second sides. The semiconductor device further includes a drift zone in the semiconductor body between the second side and a pn junction. A profile of net doping of the drift zone along at least 50% of a vertical extension of the drift zone between the first and second sides is undulated and includes doping peak values between 1×1013 cm−3 and 5×1014 cm−3. A device blocking voltage Vbr is defined by a breakdown voltage of the pn junction between the drift zone and a semiconductor region of opposite conductivity type that is electrically coupled to the first side of the semiconductor body.

Abstract translation: 半导体器件包括具有相反的第一和第二侧面的半导体本体。 半导体器件还包括在第二侧和pn结之间的半导体本体中的漂移区。 漂移区的净掺杂曲线沿着第一和第二边之间的漂移区的垂直延伸的至少50％是波形的，并且包括1×1013cm-3和5×1014cm-3之间的掺杂峰值。 器件阻断电压Vbr由漂移区和电耦合到半导体本体的第一侧的相反导电类型的半导体区之间的pn结的击穿电压限定。