公开(公告)号：US20150214347A1

公开(公告)日：2015-07-30

申请号：US14165658

申请日：2014-01-28

Applicant: Infineon Technologies AG

Inventor： Elmar Falck ,  Andreas Haertl ,  Manfred Pfaffenlehner ,  Francisco Javier Santos Rodriguez ,  Daniel Schloegl ,  Hans-Joachim Schulze ,  Andre Stegner ,  Johannes Georg Laven

IPC: H01L29/739 ,  H01L29/06 ,  H01L29/66 ,  H01L21/265 ,  H01L21/324 ,  H01L29/861 ,  H01L29/10

CPC classification number: H01L29/7395 ,  H01L21/263 ,  H01L21/265 ,  H01L21/324 ,  H01L29/0615 ,  H01L29/0623 ,  H01L29/0834 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/36 ,  H01L29/6609 ,  H01L29/66128 ,  H01L29/66333 ,  H01L29/861 ,  H01L29/8611

Abstract: A semiconductor device includes a semiconductor body having opposite first and second sides. The semiconductor device further includes a drift zone in the semiconductor body between the second side and a pn junction. A profile of net doping of the drift zone along at least 50% of a vertical extension of the drift zone between the first and second sides is undulated and includes doping peak values between 1×1013 cm−3 and 5×1014 cm−3. A device blocking voltage Vbr is defined by a breakdown voltage of the pn junction between the drift zone and a semiconductor region of opposite conductivity type that is electrically coupled to the first side of the semiconductor body.

Abstract translation: 半导体器件包括具有相反的第一和第二侧面的半导体本体。 半导体器件还包括在第二侧和pn结之间的半导体本体中的漂移区。 漂移区的净掺杂曲线沿着第一和第二边之间的漂移区的垂直延伸的至少50％是波形的，并且包括1×1013cm-3和5×1014cm-3之间的掺杂峰值。 器件阻断电压Vbr由漂移区和电耦合到半导体本体的第一侧的相反导电类型的半导体区之间的pn结的击穿电压限定。

公开(公告)号：US09293524B2

公开(公告)日：2016-03-22

申请号：US14268033

申请日：2014-05-02

Applicant: Infineon Technologies AG

Inventor： Elmar Falck ,  Wolfgang Roesener ,  Hans Peter Felsl ,  Andre Stegner

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/78 ,  H01L29/778 ,  H01L29/74 ,  H01L29/739 ,  H01L21/761

CPC classification number: H01L29/0623 ,  H01L21/761 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/1608 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/22 ,  H01L29/24 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/66348 ,  H01L29/7393 ,  H01L29/7397 ,  H01L29/74 ,  H01L29/778 ,  H01L29/78 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/8611

Abstract: A semiconductor device has a semiconductor body with bottom and top sides and a lateral surface. An active semiconductor region is formed in the semiconductor body and an edge region surrounds the active semiconductor region. A first semiconductor zone of a first conduction type is formed in the edge region. An edge termination structure having at least N field limiting structures is formed in the edge region. Each of the field limiting structures has a field ring and a separation trench formed in the semiconductor body, where N is at least 1. Each of the field rings has a second conduction type, forms a pn-junction with the first semiconductor zone and surrounds the active semiconductor region. For each of the field limiting structures, the separation trench of that field limiting structure is arranged between the field ring of that field limiting structure and the active semiconductor region.

Abstract translation: 半导体器件具有底部和顶侧以及侧面的半导体本体。 在半导体本体中形成有源半导体区域，并且边缘区域围绕有源半导体区域。 第一导电类型的第一半导体区形成在边缘区域中。 在边缘区域中形成具有至少N个场限制结构的边缘终止结构。 每个场限制结构具有形成在半导体本体中的场环和分离沟槽，其中N至少为1.每个场环具有第二导电类型，与第一半导体区形成pn结并且围绕 有源半导体区域。 对于每个场限制结构，该场限制结构的分离沟槽被布置在该场限制结构的场环和有源半导体区之间。

公开(公告)号：US20150318347A1

公开(公告)日：2015-11-05

申请号：US14268033

申请日：2014-05-02

Applicant: Infineon Technologies AG

Inventor： Elmar Falck ,  Wolfgang Roesner ,  Hans Peter Felsl ,  Andre Stegner

IPC: H01L29/06 ,  H01L21/761 ,  H01L29/74 ,  H01L29/739 ,  H01L29/78 ,  H01L29/778

CPC classification number: H01L29/0623 ,  H01L21/761 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/1608 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/22 ,  H01L29/24 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/66348 ,  H01L29/7393 ,  H01L29/7397 ,  H01L29/74 ,  H01L29/778 ,  H01L29/78 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/8611

Abstract: A semiconductor device has a semiconductor body with bottom and top sides and a lateral surface. An active semiconductor region is formed in the semiconductor body and an edge region surrounds the active semiconductor region. A first semiconductor zone of a first conduction type is formed in the edge region. An edge termination structure having at least N field limiting structures is formed in the edge region. Each of the field limiting structures has a field ring and a separation trench formed in the semiconductor body, where N is at least 1. Each of the field rings has a second conduction type, forms a pn-junction with the first semiconductor zone and surrounds the active semiconductor region. For each of the field limiting structures, the separation trench of that field limiting structure is arranged between the field ring of that field limiting structure and the active semiconductor region.

Abstract translation: 半导体器件具有底部和顶侧以及侧面的半导体本体。 在半导体本体中形成有源半导体区域，并且边缘区域围绕有源半导体区域。 第一导电类型的第一半导体区形成在边缘区域中。 在边缘区域中形成具有至少N个场限制结构的边缘终止结构。 每个场限制结构具有形成在半导体本体中的场环和分离沟槽，其中N至少为1.每个场环具有第二导电类型，与第一半导体区形成pn结并且围绕 有源半导体区域。 对于每个场限制结构，该场限制结构的分离沟槽被布置在该场限制结构的场环和有源半导体区之间。

公开(公告)号：US20190157435A1

公开(公告)日：2019-05-23

申请号：US16257300

申请日：2019-01-25

Applicant: Infineon Technologies AG

Inventor： Elmar Falck ,  Andreas Haertl ,  Manfred Pfaffenlehner ,  Francisco Javier Santos Rodriguez ,  Daniel Schloegl ,  Hans-Joachim Schulze ,  Andre Stegner ,  Johannes Georg Laven

IPC: H01L29/739 ,  H01L21/263 ,  H01L29/66 ,  H01L21/265 ,  H01L21/324 ,  H01L29/861 ,  H01L29/36 ,  H01L29/06

Abstract: A method of manufacturing a semiconductor device includes forming a profile of net doping in a drift zone of a semiconductor body by multiple irradiations with protons and generating hydrogen-related donors by annealing the semiconductor body. At least 50% of a vertical extension of the drift zone between first and second sides of the semiconductor body is undulated and includes multiple doping peak values between 1×1013 cm−3 and 5×1014 cm−3.

公开(公告)号：US10211325B2

公开(公告)日：2019-02-19

申请号：US14165658

申请日：2014-01-28

Applicant: Infineon Technologies AG

Inventor： Elmar Falck ,  Andreas Haertl ,  Manfred Pfaffenlehner ,  Francisco Javier Santos Rodriguez ,  Daniel Schloegl ,  Hans-Joachim Schulze ,  Andre Stegner ,  Johannes Georg Laven

IPC: H01L27/06 ,  H01L29/739 ,  H01L21/265 ,  H01L21/324 ,  H01L29/06 ,  H01L29/66 ,  H01L29/861 ,  H01L21/263 ,  H01L29/36 ,  H01L29/10 ,  H01L29/08

Abstract: A semiconductor device includes a semiconductor body having opposite first and second sides. The semiconductor device further includes a drift zone in the semiconductor body between the second side and a pn junction. A profile of net doping of the drift zone along at least 50% of a vertical extension of the drift zone between the first and second sides is undulated and includes doping peak values between 1×1013 cm−3 and 5×1014 cm−3. A device blocking voltage Vbr is defined by a breakdown voltage of the pn junction between the drift zone and a semiconductor region of opposite conductivity type that is electrically coupled to the first side of the semiconductor body.